AT337779B - Verfahren zum kontaktieren einer halbleiterscheibe - Google Patents

Verfahren zum kontaktieren einer halbleiterscheibe

Info

Publication number
AT337779B
AT337779B AT658871A AT658871A AT337779B AT 337779 B AT337779 B AT 337779B AT 658871 A AT658871 A AT 658871A AT 658871 A AT658871 A AT 658871A AT 337779 B AT337779 B AT 337779B
Authority
AT
Austria
Prior art keywords
contacting
semiconductor disc
disc
semiconductor
Prior art date
Application number
AT658871A
Other languages
English (en)
Other versions
ATA658871A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA658871A publication Critical patent/ATA658871A/de
Application granted granted Critical
Publication of AT337779B publication Critical patent/AT337779B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
AT658871A 1970-08-18 1971-07-28 Verfahren zum kontaktieren einer halbleiterscheibe AT337779B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2041035A DE2041035C2 (de) 1970-08-18 1970-08-18 Verfahren zum gleichzeitigen elektrolytischen in bezug auf die Sperrfähigkeit selektiven Behandeln von mehreren in einer gemeinsamen Halbleiterscheibe erzeugten gleichen Halbleiterbauelementen

Publications (2)

Publication Number Publication Date
ATA658871A ATA658871A (de) 1976-11-15
AT337779B true AT337779B (de) 1977-07-25

Family

ID=5780094

Family Applications (1)

Application Number Title Priority Date Filing Date
AT658871A AT337779B (de) 1970-08-18 1971-07-28 Verfahren zum kontaktieren einer halbleiterscheibe

Country Status (10)

Country Link
US (1) US3738917A (de)
JP (1) JPS579217B1 (de)
AT (1) AT337779B (de)
CA (1) CA932880A (de)
CH (1) CH524827A (de)
DE (1) DE2041035C2 (de)
FR (1) FR2102327B1 (de)
GB (1) GB1332586A (de)
NL (1) NL7111385A (de)
SE (1) SE376685B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2207012C2 (de) * 1972-02-15 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Kontaktierung von Halbleiterbauelementen
US3987538A (en) * 1973-12-26 1976-10-26 Texas Instruments Incorporated Method of making devices having closely spaced electrodes
US4080721A (en) * 1975-06-30 1978-03-28 International Business Machines Corporation Fabrication of semiconductor device
US4125440A (en) * 1977-07-25 1978-11-14 International Business Machines Corporation Method for non-destructive testing of semiconductor articles
US4306951A (en) * 1980-05-30 1981-12-22 International Business Machines Corporation Electrochemical etching process for semiconductors
FR3120569B1 (fr) 2021-03-10 2024-04-26 Psa Automobiles Sa Procédé de gestion du fonctionnement d’une interface homme-machine d’un appareillage de gestion du fonctionnement d’un vitrage adaptatif d’un véhicule automobile, système et véhicule automobile associés

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1432035A (fr) * 1964-03-30 1966-03-18 Gen Electric Perfectionnements aux méthodes de contrôle de semiconducteurs

Also Published As

Publication number Publication date
NL7111385A (de) 1972-02-22
DE2041035A1 (de) 1972-02-24
SE376685B (de) 1975-06-02
CH524827A (de) 1972-06-30
JPS579217B1 (de) 1982-02-20
US3738917A (en) 1973-06-12
FR2102327A1 (de) 1972-04-07
DE2041035C2 (de) 1982-10-28
ATA658871A (de) 1976-11-15
FR2102327B1 (de) 1977-03-18
CA932880A (en) 1973-08-28
GB1332586A (en) 1973-10-03

Similar Documents

Publication Publication Date Title
CH505473A (de) Verfahren zum Herstellen einer Halbleitervorrichtung
AT341245B (de) Verfahren zum herstellen einer modulierten bezugsgitteraufzeichnung eines objektes
CH533889A (de) Verfahren zum Herstellen eines Kabels
CH540099A (de) Verfahren zum Beschichten einer Fläche
CH530714A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH516227A (de) Verfahren zum Herstellen einer Sperrschicht-Halbleitervorrichtung
AT329722B (de) Verfahren zum klarspulen von maschinell gereinigtem geschirr
DE2104207B2 (de) Verfahren zum verbinden eines kontaktierungsdrahtes
CH526848A (de) Verfahren zum Herstellen einer Spule
CH532853A (de) Verfahren zum Verbinden von aluminiummantelten Kabeln
CH399588A (de) Verfahren zum Bestimmen des spezifischen Widerstandes einer dünnen Halbleiterschicht
AT337779B (de) Verfahren zum kontaktieren einer halbleiterscheibe
CH525027A (de) Verfahren zum epitaktischen Niederschlagen einer Halbleiterverbindung
AT326259B (de) Verfahren zum gleichmässigen recken eines kabels
AT341061B (de) Verfahren zum klarspulen von maschinell gereinigtem geschirr
DE1800347B2 (de) Verfahren zum herstellen einer halbleiteranordnung
AT313025B (de) Verfahren zum Strangpressen
AT298830B (de) Holographisch-interferometrisches oder moirémetrisches Verfahren
AT292786B (de) Verfahren zum herstellen einer halbleiteranordnung
CH468721A (de) Verfahren zum gleichzeitigen Herstellen einer Vielzahl von Halbleiterbauelementen
CH536197A (de) Verfahren zum Abdichten einer Oberfläche
CH474859A (de) Verfahren zum Herstellen einer Halbleitervorrichtung
CH524895A (de) Verfahren zum Herstellen einer Halbleiteranordnung
CH535513A (de) Verfahren zum Summieren von Impulsen
CH521803A (de) Verfahren zum Herstellen einer Rohrleitung