ATA658871A - Verfahren zum kontaktieren einer halbleiterscheibe - Google Patents
Verfahren zum kontaktieren einer halbleiterscheibeInfo
- Publication number
- ATA658871A ATA658871A AT658871A AT658871A ATA658871A AT A658871 A ATA658871 A AT A658871A AT 658871 A AT658871 A AT 658871A AT 658871 A AT658871 A AT 658871A AT A658871 A ATA658871 A AT A658871A
- Authority
- AT
- Austria
- Prior art keywords
- contacting
- semiconductor disc
- disc
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
- H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2041035A DE2041035C2 (de) | 1970-08-18 | 1970-08-18 | Verfahren zum gleichzeitigen elektrolytischen in bezug auf die Sperrfähigkeit selektiven Behandeln von mehreren in einer gemeinsamen Halbleiterscheibe erzeugten gleichen Halbleiterbauelementen |
Publications (2)
Publication Number | Publication Date |
---|---|
ATA658871A true ATA658871A (de) | 1976-11-15 |
AT337779B AT337779B (de) | 1977-07-25 |
Family
ID=5780094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT658871A AT337779B (de) | 1970-08-18 | 1971-07-28 | Verfahren zum kontaktieren einer halbleiterscheibe |
Country Status (10)
Country | Link |
---|---|
US (1) | US3738917A (de) |
JP (1) | JPS579217B1 (de) |
AT (1) | AT337779B (de) |
CA (1) | CA932880A (de) |
CH (1) | CH524827A (de) |
DE (1) | DE2041035C2 (de) |
FR (1) | FR2102327B1 (de) |
GB (1) | GB1332586A (de) |
NL (1) | NL7111385A (de) |
SE (1) | SE376685B (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2207012C2 (de) * | 1972-02-15 | 1985-10-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Kontaktierung von Halbleiterbauelementen |
US3987538A (en) * | 1973-12-26 | 1976-10-26 | Texas Instruments Incorporated | Method of making devices having closely spaced electrodes |
US4080721A (en) * | 1975-06-30 | 1978-03-28 | International Business Machines Corporation | Fabrication of semiconductor device |
US4125440A (en) * | 1977-07-25 | 1978-11-14 | International Business Machines Corporation | Method for non-destructive testing of semiconductor articles |
US4306951A (en) * | 1980-05-30 | 1981-12-22 | International Business Machines Corporation | Electrochemical etching process for semiconductors |
FR3120569B1 (fr) | 2021-03-10 | 2024-04-26 | Psa Automobiles Sa | Procédé de gestion du fonctionnement d’une interface homme-machine d’un appareillage de gestion du fonctionnement d’un vitrage adaptatif d’un véhicule automobile, système et véhicule automobile associés |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1432035A (fr) * | 1964-03-30 | 1966-03-18 | Gen Electric | Perfectionnements aux méthodes de contrôle de semiconducteurs |
-
1970
- 1970-08-18 DE DE2041035A patent/DE2041035C2/de not_active Expired
-
1971
- 1971-07-14 CH CH1033271A patent/CH524827A/de not_active IP Right Cessation
- 1971-07-28 AT AT658871A patent/AT337779B/de active
- 1971-08-05 GB GB3675471A patent/GB1332586A/en not_active Expired
- 1971-08-16 US US00171957A patent/US3738917A/en not_active Expired - Lifetime
- 1971-08-17 FR FR7129909A patent/FR2102327B1/fr not_active Expired
- 1971-08-18 CA CA120807A patent/CA932880A/en not_active Expired
- 1971-08-18 NL NL7111385A patent/NL7111385A/xx unknown
- 1971-08-18 JP JP6286671A patent/JPS579217B1/ja active Pending
- 1971-08-18 SE SE7110529A patent/SE376685B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AT337779B (de) | 1977-07-25 |
CA932880A (en) | 1973-08-28 |
JPS579217B1 (de) | 1982-02-20 |
FR2102327A1 (de) | 1972-04-07 |
CH524827A (de) | 1972-06-30 |
FR2102327B1 (de) | 1977-03-18 |
DE2041035A1 (de) | 1972-02-24 |
SE376685B (de) | 1975-06-02 |
DE2041035C2 (de) | 1982-10-28 |
US3738917A (en) | 1973-06-12 |
NL7111385A (de) | 1972-02-22 |
GB1332586A (en) | 1973-10-03 |
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