CA2449632C - Methode de fabrication de dispositifs electroniques a l'aide de canaux microfluidiques - Google Patents

Methode de fabrication de dispositifs electroniques a l'aide de canaux microfluidiques Download PDF

Info

Publication number
CA2449632C
CA2449632C CA002449632A CA2449632A CA2449632C CA 2449632 C CA2449632 C CA 2449632C CA 002449632 A CA002449632 A CA 002449632A CA 2449632 A CA2449632 A CA 2449632A CA 2449632 C CA2449632 C CA 2449632C
Authority
CA
Canada
Prior art keywords
thin film
opaque
semiconductor
film transistors
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002449632A
Other languages
English (en)
Other versions
CA2449632A1 (fr
Inventor
Michael L. Chabinyc
William S. Wong
Robert A. Street
Kateri E. Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Palo Alto Research Center Inc
Original Assignee
Palo Alto Research Center Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Palo Alto Research Center Inc filed Critical Palo Alto Research Center Inc
Publication of CA2449632A1 publication Critical patent/CA2449632A1/fr
Application granted granted Critical
Publication of CA2449632C publication Critical patent/CA2449632C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Structure ainsi que méthode d'utilisation de canaux microfluidiques servant à former un ensemble de dispositifs semi-conducteurs. Les canaux microfluidiques sont particulièrement utiles lorsqu'ils sont fabriqués à l'aide d'un procédé d'auto-alignement et utilisés pour interconnecter une série d'appareils à transistors en couches minces (TCM).
CA002449632A 2002-11-22 2003-11-17 Methode de fabrication de dispositifs electroniques a l'aide de canaux microfluidiques Expired - Fee Related CA2449632C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/303,551 US6872588B2 (en) 2002-11-22 2002-11-22 Method of fabrication of electronic devices using microfluidic channels
US10/303,551 2002-11-22

Publications (2)

Publication Number Publication Date
CA2449632A1 CA2449632A1 (fr) 2004-05-22
CA2449632C true CA2449632C (fr) 2009-07-07

Family

ID=32229935

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002449632A Expired - Fee Related CA2449632C (fr) 2002-11-22 2003-11-17 Methode de fabrication de dispositifs electroniques a l'aide de canaux microfluidiques

Country Status (6)

Country Link
US (1) US6872588B2 (fr)
EP (1) EP1422766B1 (fr)
JP (1) JP4699687B2 (fr)
BR (1) BR0305303A (fr)
CA (1) CA2449632C (fr)
DE (1) DE60335772D1 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087444B2 (en) * 2002-12-16 2006-08-08 Palo Alto Research Center Incorporated Method for integration of microelectronic components with microfluidic devices
KR100669802B1 (ko) * 2004-12-04 2007-01-16 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 상기 박막트랜지스터를 구비한 평판 표시 장치
TWI254027B (en) * 2004-12-07 2006-05-01 Ind Tech Res Inst Micro device and manufacturing method thereof
JP4602920B2 (ja) * 2005-03-19 2010-12-22 三星モバイルディスプレイ株式會社 有機薄膜トランジスタ、それを備えた平板ディスプレイ装置、及び有機薄膜トランジスタの製造方法
US8624216B2 (en) 2005-05-09 2014-01-07 Pragmatic Printing Limited Planar electronic semiconductor device
GB0509410D0 (en) * 2005-05-09 2005-06-15 Univ Manchester Low-mobility electronics devices
KR20070009013A (ko) * 2005-07-14 2007-01-18 삼성전자주식회사 평판표시장치 및 평판표시장치의 제조방법
US7365022B2 (en) * 2006-01-20 2008-04-29 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
US7498119B2 (en) * 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7384568B2 (en) * 2006-03-31 2008-06-10 Palo Alto Research Center Incorporated Method of forming a darkfield etch mask
US8821799B2 (en) 2007-01-26 2014-09-02 Palo Alto Research Center Incorporated Method and system implementing spatially modulated excitation or emission for particle characterization with enhanced sensitivity
US9164037B2 (en) * 2007-01-26 2015-10-20 Palo Alto Research Center Incorporated Method and system for evaluation of signals received from spatially modulated excitation and emission to accurately determine particle positions and distances
WO2008100603A1 (fr) * 2007-02-15 2008-08-21 Massachusetts Institute Of Technology Cellules solaires ayant des surfaces texturées
WO2008119066A1 (fr) * 2007-03-28 2008-10-02 The Regents Of The University Of California Brucelles optoélectroniques à champ latéral simple face et à base de phototransistor
US8551556B2 (en) * 2007-11-20 2013-10-08 Palo Alto Research Center Incorporated Method for obtaining controlled sidewall profile in print-patterned structures
EP2215453A1 (fr) * 2007-11-22 2010-08-11 Koninklijke Philips Electronics N.V. Cartouches de détecteur optique et électrique combinées
SG153674A1 (en) * 2007-12-11 2009-07-29 Nanyang Polytechnic A method of doping and apparatus for doping
US8373860B2 (en) 2008-02-01 2013-02-12 Palo Alto Research Center Incorporated Transmitting/reflecting emanating light with time variation
US8629981B2 (en) 2008-02-01 2014-01-14 Palo Alto Research Center Incorporated Analyzers with time variation based on color-coded spatial modulation
WO2009145857A1 (fr) * 2008-04-18 2009-12-03 1366 Technologies Inc. Procédés permettant de former des motifs de couches de diffusion dans des cellules solaires et cellules solaires fabriquées selon ces procédés
GB0818531D0 (en) * 2008-10-09 2008-11-19 Eastman Kodak Co Interconnection of adjacent devices
US8136922B2 (en) * 2009-09-01 2012-03-20 Xerox Corporation Self-assembly monolayer modified printhead
US8679984B2 (en) 2011-06-30 2014-03-25 Samsung Electronics Co., Ltd. Method of manufacturing electric device, array of electric devices, and manufacturing method therefor
US9029800B2 (en) 2011-08-09 2015-05-12 Palo Alto Research Center Incorporated Compact analyzer with spatial modulation and multiple intensity modulated excitation sources
US8723140B2 (en) 2011-08-09 2014-05-13 Palo Alto Research Center Incorporated Particle analyzer with spatial modulation and long lifetime bioprobes
JP2013098487A (ja) * 2011-11-04 2013-05-20 Sony Corp 有機半導体素子の製造方法、有機半導体素子および電子機器
CN105116038B (zh) * 2015-07-20 2018-06-29 深圳大学 一种基于有机半导体的免疫检测集成芯片及其制备方法
CN107046097B (zh) * 2017-05-11 2019-05-14 京东方科技集团股份有限公司 显示面板制造方法、显示面板的制造设备和显示面板
WO2019066912A1 (fr) * 2017-09-29 2019-04-04 Intel Corporation Contacts auto-alignés pour transistors à couches minces
CN112255666B (zh) * 2020-10-23 2022-11-18 中国工程物理研究院激光聚变研究中心 中子灵敏微通道板

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910006164B1 (ko) * 1987-03-18 1991-08-16 가부시키가이샤 도시바 박막형성방법과 그 장치
JPH03145767A (ja) * 1989-10-31 1991-06-20 Fujitsu Ltd 薄膜トランジスタの製造方法
US5699157A (en) * 1996-07-16 1997-12-16 Caliper Technologies Corp. Fourier detection of species migrating in a microchannel
US6136212A (en) * 1996-08-12 2000-10-24 The Regents Of The University Of Michigan Polymer-based micromachining for microfluidic devices
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
JPH10256558A (ja) * 1997-03-17 1998-09-25 Toshiba Corp 薄膜トランジスタアレイの製造方法、電子装置および薄膜トランジスタ
US6669803B1 (en) * 1997-10-03 2003-12-30 Digital Optics Corp. Simultaneous provision of controlled height bonding material at a wafer level and associated structures
US6685809B1 (en) * 1999-02-04 2004-02-03 Ut-Battelle, Llc Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels
US6033202A (en) * 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
US6159871A (en) * 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
KR100308851B1 (ko) * 1998-11-04 2001-12-17 구본준, 론 위라하디락사 액정표시장치의 절연막 패턴 형성방법
US6247986B1 (en) * 1998-12-23 2001-06-19 3M Innovative Properties Company Method for precise molding and alignment of structures on a substrate using a stretchable mold
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
JP3084367B1 (ja) * 1999-03-17 2000-09-04 キヤノン販売株式会社 層間絶縁膜の形成方法及び半導体装置
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
GB0013473D0 (en) * 2000-06-03 2000-07-26 Univ Liverpool A method of electronic component fabrication and an electronic component
KR100486333B1 (ko) * 2000-07-21 2005-04-29 가부시끼가이샤 한도따이 프로세스 켄큐쇼 반도체 장치 및 그 제조 방법
US6448186B1 (en) * 2000-10-06 2002-09-10 Novellus Systems, Inc. Method and apparatus for use of hydrogen and silanes in plasma
US6537923B1 (en) * 2000-10-31 2003-03-25 Lsi Logic Corporation Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines
US6582890B2 (en) * 2001-03-05 2003-06-24 Sandia Corporation Multiple wavelength photolithography for preparing multilayer microstructures
US6627111B2 (en) * 2001-03-06 2003-09-30 International Business Machines Corp. Organic light emitting displays and new fluorescent compounds
US6472333B2 (en) * 2001-03-28 2002-10-29 Applied Materials, Inc. Silicon carbide cap layers for low dielectric constant silicon oxide layers
US6452207B1 (en) * 2001-03-30 2002-09-17 Lucent Technologies Inc. Organic semiconductor devices
DE10116876B4 (de) * 2001-04-04 2004-09-23 Infineon Technologies Ag Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung
JP4841751B2 (ja) * 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
US6669454B2 (en) * 2001-06-05 2003-12-30 Wisconsin Alumni Research Foundation Microfluidic actuation method and apparatus
US6634732B2 (en) * 2001-09-11 2003-10-21 Hewlett-Packard Development Company, L.P. Thermoplastic polymer film sealing of nozzles on fluid ejection devices and method
US6698868B2 (en) * 2001-10-31 2004-03-02 Hewlett-Packard Development Company, L.P. Thermal drop generator for ultra-small droplets
US6778718B2 (en) * 2001-11-09 2004-08-17 Corning Incorporated Alignment of active optical components with waveguides

Also Published As

Publication number Publication date
EP1422766A3 (fr) 2007-06-06
JP4699687B2 (ja) 2011-06-15
DE60335772D1 (de) 2011-03-03
BR0305303A (pt) 2004-08-31
JP2004179655A (ja) 2004-06-24
EP1422766B1 (fr) 2011-01-19
US6872588B2 (en) 2005-03-29
US20040101987A1 (en) 2004-05-27
CA2449632A1 (fr) 2004-05-22
EP1422766A2 (fr) 2004-05-26

Similar Documents

Publication Publication Date Title
CA2449632C (fr) Methode de fabrication de dispositifs electroniques a l'aide de canaux microfluidiques
US6521489B2 (en) Preferred methods for producing electrical circuit elements used to control an electronic display
US6759713B2 (en) Electronic device structures including interconnecting microfluidic channels
Menard et al. Micro-and nanopatterning techniques for organic electronic and optoelectronic systems
US6927108B2 (en) Solution-processed thin film transistor formation method
JP5410475B2 (ja) 薄膜トランジスタ（ｔｆｔ）アレーの製造方法
US20060110847A1 (en) Field effect transistor and its manufacturing method
US7384814B2 (en) Field effect transistor including an organic semiconductor and a dielectric layer having a substantially same pattern
US9159925B2 (en) Process for imprint patterning materials in thin-film devices
KR101348025B1 (ko) 박막 트랜지스터의 제조방법
US7709306B2 (en) Active layer island
KR100909481B1 (ko) 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법
KR20090128446A (ko) 유기 박막 트랜지스터, 유기 박막 트랜지스터 형성 방법 및 유기 발광 장치
US20080135836A1 (en) Self-Aligned Process To Manufacture Organic Transistors
JP5638565B2 (ja) ポリマー薄膜における自己整合ビアホールの形成
KR20070014971A (ko) 반도체 장치의 제조 방법 및 반도체 장치
US20070082438A1 (en) Thin film transistor and method for fabrication of an electronic device
KR20080096497A (ko) 반도체 디바이스
KR20060015270A (ko) 반도체 장치용 구조체, 반도체 장치 제조 방법, 전자디바이스 및 전계발광 디바이스
US20080093594A1 (en) Organic semiconductor device, manufacturing method of the same, organic transistor array, and display
EP1727219B1 (fr) Transistor organique à couche mince et son procédé de fabrication
WO2005008743A2 (fr) Composant semi-conducteur possedant des electrodes metalliques et procede servant a creer ce composant
US20080145966A1 (en) Method for fabrication of organic thin-film transistor
KR20090008694A (ko) 패턴 형성 방법
KR100897230B1 (ko) 전도성 유기물 전극 형성 방법

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed

Effective date: 20171117

MKLA Lapsed

Effective date: 20171117

MKLA Lapsed

Effective date: 20171117