BR0305303A - Processo de fabricação de dispositivos eletrônicos que utilizam canais microfluídicos - Google Patents

Processo de fabricação de dispositivos eletrônicos que utilizam canais microfluídicos

Info

Publication number
BR0305303A
BR0305303A BR0305303-2A BR0305303A BR0305303A BR 0305303 A BR0305303 A BR 0305303A BR 0305303 A BR0305303 A BR 0305303A BR 0305303 A BR0305303 A BR 0305303A
Authority
BR
Brazil
Prior art keywords
microfluidic channels
electronic devices
manufacturing process
channels
devices
Prior art date
Application number
BR0305303-2A
Other languages
English (en)
Inventor
Michael L Chabinyc
William S Wong
Robert A Street
Kateri E Paul
Original Assignee
Palo Alto Res Ct Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Palo Alto Res Ct Inc filed Critical Palo Alto Res Ct Inc
Publication of BR0305303A publication Critical patent/BR0305303A/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

"PROCESSO DE FABRICAçãO DE DISPOSITIVOS ELETRôNICOS QUE UTILIZAM CANAIS MICROFLUíDICOS". A invenção refere-se a uma estrutura e processo de utilizar canais microfluídicos para formar uma matriz de dispositivos semicondutores descrita. Os canais microfluídicos foram descobertos serem particularmente úteis, quando formados em um processo auto-alinhado e utilizados para interconectar uma série de dispositivos transistores de filme fino (TFT).
BR0305303-2A 2002-11-22 2003-11-21 Processo de fabricação de dispositivos eletrônicos que utilizam canais microfluídicos BR0305303A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/303,551 US6872588B2 (en) 2002-11-22 2002-11-22 Method of fabrication of electronic devices using microfluidic channels

Publications (1)

Publication Number Publication Date
BR0305303A true BR0305303A (pt) 2004-08-31

Family

ID=32229935

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0305303-2A BR0305303A (pt) 2002-11-22 2003-11-21 Processo de fabricação de dispositivos eletrônicos que utilizam canais microfluídicos

Country Status (6)

Country Link
US (1) US6872588B2 (pt)
EP (1) EP1422766B1 (pt)
JP (1) JP4699687B2 (pt)
BR (1) BR0305303A (pt)
CA (1) CA2449632C (pt)
DE (1) DE60335772D1 (pt)

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US7365022B2 (en) * 2006-01-20 2008-04-29 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
US7498119B2 (en) * 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7384568B2 (en) * 2006-03-31 2008-06-10 Palo Alto Research Center Incorporated Method of forming a darkfield etch mask
US8821799B2 (en) 2007-01-26 2014-09-02 Palo Alto Research Center Incorporated Method and system implementing spatially modulated excitation or emission for particle characterization with enhanced sensitivity
US9164037B2 (en) * 2007-01-26 2015-10-20 Palo Alto Research Center Incorporated Method and system for evaluation of signals received from spatially modulated excitation and emission to accurately determine particle positions and distances
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US8373860B2 (en) 2008-02-01 2013-02-12 Palo Alto Research Center Incorporated Transmitting/reflecting emanating light with time variation
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US8136922B2 (en) * 2009-09-01 2012-03-20 Xerox Corporation Self-assembly monolayer modified printhead
US8679984B2 (en) 2011-06-30 2014-03-25 Samsung Electronics Co., Ltd. Method of manufacturing electric device, array of electric devices, and manufacturing method therefor
US9029800B2 (en) 2011-08-09 2015-05-12 Palo Alto Research Center Incorporated Compact analyzer with spatial modulation and multiple intensity modulated excitation sources
US8723140B2 (en) 2011-08-09 2014-05-13 Palo Alto Research Center Incorporated Particle analyzer with spatial modulation and long lifetime bioprobes
JP2013098487A (ja) * 2011-11-04 2013-05-20 Sony Corp 有機半導体素子の製造方法、有機半導体素子および電子機器
CN105116038B (zh) * 2015-07-20 2018-06-29 深圳大学 一种基于有机半导体的免疫检测集成芯片及其制备方法
CN107046097B (zh) * 2017-05-11 2019-05-14 京东方科技集团股份有限公司 显示面板制造方法、显示面板的制造设备和显示面板
US20200227568A1 (en) * 2017-09-29 2020-07-16 Intel Corporation Self-aligned contacts for thin film transistors
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Also Published As

Publication number Publication date
EP1422766A2 (en) 2004-05-26
US20040101987A1 (en) 2004-05-27
JP2004179655A (ja) 2004-06-24
EP1422766B1 (en) 2011-01-19
DE60335772D1 (de) 2011-03-03
EP1422766A3 (en) 2007-06-06
JP4699687B2 (ja) 2011-06-15
US6872588B2 (en) 2005-03-29
CA2449632C (en) 2009-07-07
CA2449632A1 (en) 2004-05-22

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Legal Events

Date Code Title Description
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B11D Dismissal acc. art. 38, par 2 of ipl - failure to pay fee after grant in time