EP1422766A3 - Method of fabrication of electronic devices using microfluidic channels - Google Patents

Method of fabrication of electronic devices using microfluidic channels Download PDF

Info

Publication number
EP1422766A3
EP1422766A3 EP03026733A EP03026733A EP1422766A3 EP 1422766 A3 EP1422766 A3 EP 1422766A3 EP 03026733 A EP03026733 A EP 03026733A EP 03026733 A EP03026733 A EP 03026733A EP 1422766 A3 EP1422766 A3 EP 1422766A3
Authority
EP
European Patent Office
Prior art keywords
microfluidic channels
fabrication
electronic devices
devices
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03026733A
Other languages
German (de)
French (fr)
Other versions
EP1422766A2 (en
EP1422766B1 (en
Inventor
Michael L. Chabinyc
William S. Wong
Robert A. Street
Kateri E. Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of EP1422766A2 publication Critical patent/EP1422766A2/en
Publication of EP1422766A3 publication Critical patent/EP1422766A3/en
Application granted granted Critical
Publication of EP1422766B1 publication Critical patent/EP1422766B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A structure and method of using microfluidic channels to form an array of semiconductor devices is described. The microfluidic channels have been found to be particularly useful when formed in a self aligned process and used to interconnect a series of thin film transistor (TFT) devices.
EP03026733A 2002-11-22 2003-11-21 Method of fabrication of electronic devices using microfluidic channels Expired - Lifetime EP1422766B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/303,551 US6872588B2 (en) 2002-11-22 2002-11-22 Method of fabrication of electronic devices using microfluidic channels
US303551 2002-11-22

Publications (3)

Publication Number Publication Date
EP1422766A2 EP1422766A2 (en) 2004-05-26
EP1422766A3 true EP1422766A3 (en) 2007-06-06
EP1422766B1 EP1422766B1 (en) 2011-01-19

Family

ID=32229935

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03026733A Expired - Lifetime EP1422766B1 (en) 2002-11-22 2003-11-21 Method of fabrication of electronic devices using microfluidic channels

Country Status (6)

Country Link
US (1) US6872588B2 (en)
EP (1) EP1422766B1 (en)
JP (1) JP4699687B2 (en)
BR (1) BR0305303A (en)
CA (1) CA2449632C (en)
DE (1) DE60335772D1 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087444B2 (en) * 2002-12-16 2006-08-08 Palo Alto Research Center Incorporated Method for integration of microelectronic components with microfluidic devices
KR100669802B1 (en) * 2004-12-04 2007-01-16 삼성에스디아이 주식회사 A thin film transistor, a method for preparing the thin film transistor and a flat panel display device employing the same
TWI254027B (en) * 2004-12-07 2006-05-01 Ind Tech Res Inst Micro device and manufacturing method thereof
JP4602920B2 (en) * 2005-03-19 2010-12-22 三星モバイルディスプレイ株式會社 ORGANIC THIN FILM TRANSISTOR, FLAT DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR
EP2264803B1 (en) * 2005-05-09 2019-01-30 Pragmatic Printing Ltd Organic rectifier circuit
GB0509410D0 (en) * 2005-05-09 2005-06-15 Univ Manchester Low-mobility electronics devices
KR20070009013A (en) * 2005-07-14 2007-01-18 삼성전자주식회사 Flat panel display and method of making flat panel display
US7365022B2 (en) * 2006-01-20 2008-04-29 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
US7498119B2 (en) * 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7384568B2 (en) * 2006-03-31 2008-06-10 Palo Alto Research Center Incorporated Method of forming a darkfield etch mask
US8821799B2 (en) 2007-01-26 2014-09-02 Palo Alto Research Center Incorporated Method and system implementing spatially modulated excitation or emission for particle characterization with enhanced sensitivity
US9164037B2 (en) * 2007-01-26 2015-10-20 Palo Alto Research Center Incorporated Method and system for evaluation of signals received from spatially modulated excitation and emission to accurately determine particle positions and distances
MY158347A (en) * 2007-02-15 2016-09-30 Massachusetts Inst Technology Solar cells with textured surfaces
WO2008119066A1 (en) * 2007-03-28 2008-10-02 The Regents Of The University Of California Single-sided lateral-field and phototransistor-based optoelectronic tweezers
US8551556B2 (en) * 2007-11-20 2013-10-08 Palo Alto Research Center Incorporated Method for obtaining controlled sidewall profile in print-patterned structures
EP2215453A1 (en) * 2007-11-22 2010-08-11 Koninklijke Philips Electronics N.V. Combined optical and electrical sensor cartridges
SG153674A1 (en) * 2007-12-11 2009-07-29 Nanyang Polytechnic A method of doping and apparatus for doping
US8629981B2 (en) 2008-02-01 2014-01-14 Palo Alto Research Center Incorporated Analyzers with time variation based on color-coded spatial modulation
US8373860B2 (en) 2008-02-01 2013-02-12 Palo Alto Research Center Incorporated Transmitting/reflecting emanating light with time variation
EP2279526A4 (en) * 2008-04-18 2015-11-04 1366 Tech Inc Methods to pattern diffusion layers in solar cells and solar cells made by such methods
GB0818531D0 (en) * 2008-10-09 2008-11-19 Eastman Kodak Co Interconnection of adjacent devices
US8136922B2 (en) * 2009-09-01 2012-03-20 Xerox Corporation Self-assembly monolayer modified printhead
US8679984B2 (en) 2011-06-30 2014-03-25 Samsung Electronics Co., Ltd. Method of manufacturing electric device, array of electric devices, and manufacturing method therefor
US8723140B2 (en) 2011-08-09 2014-05-13 Palo Alto Research Center Incorporated Particle analyzer with spatial modulation and long lifetime bioprobes
US9029800B2 (en) 2011-08-09 2015-05-12 Palo Alto Research Center Incorporated Compact analyzer with spatial modulation and multiple intensity modulated excitation sources
JP2013098487A (en) * 2011-11-04 2013-05-20 Sony Corp Manufacturing method of organic semiconductor device, organic semiconductor device and electronic apparatus
CN105116038B (en) * 2015-07-20 2018-06-29 深圳大学 One kind is based on organic semi-conductor immune detection integrated chip and preparation method thereof
CN107046097B (en) * 2017-05-11 2019-05-14 京东方科技集团股份有限公司 Display panel manufacturing method, the manufacturing equipment of display panel and display panel
DE112017008144T5 (en) * 2017-09-29 2020-07-16 Intel Corporation SELF-ALIGNED CONTACTS FOR THIN FILM TRANSISTORS
CN112255666B (en) * 2020-10-23 2022-11-18 中国工程物理研究院激光聚变研究中心 Neutron sensitive microchannel plate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136212A (en) * 1996-08-12 2000-10-24 The Regents Of The University Of Michigan Polymer-based micromachining for microfluidic devices
US6300988B1 (en) * 1999-03-16 2001-10-09 Hitachi, Ltd. Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode
WO2001095384A1 (en) * 2000-06-03 2001-12-13 The University Of Liverpool A method of electronic component fabrication and an electronic component
US6452207B1 (en) * 2001-03-30 2002-09-17 Lucent Technologies Inc. Organic semiconductor devices
WO2002082560A1 (en) * 2001-04-04 2002-10-17 Infineon Technologies Ag Self-aligned contact doping for organic field effect transistors
EP1263062A2 (en) * 2001-06-01 2002-12-04 Sel Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device and process of manufacturing the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910006164B1 (en) * 1987-03-18 1991-08-16 가부시키가이샤 도시바 Making method and there device of thin film
JPH03145767A (en) * 1989-10-31 1991-06-20 Fujitsu Ltd Manufacture of thin film transistor
US5699157A (en) * 1996-07-16 1997-12-16 Caliper Technologies Corp. Fourier detection of species migrating in a microchannel
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
JPH10256558A (en) * 1997-03-17 1998-09-25 Toshiba Corp Manufacture of thin-film transistor array, electronic device and thin-film transistor
US6669803B1 (en) * 1997-10-03 2003-12-30 Digital Optics Corp. Simultaneous provision of controlled height bonding material at a wafer level and associated structures
US6685809B1 (en) * 1999-02-04 2004-02-03 Ut-Battelle, Llc Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels
US6033202A (en) 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
US6159871A (en) * 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
KR100308851B1 (en) * 1998-11-04 2001-12-17 구본준, 론 위라하디락사 Method of forming insulating film pattern of liquid crystal display device
US6247986B1 (en) * 1998-12-23 2001-06-19 3M Innovative Properties Company Method for precise molding and alignment of structures on a substrate using a stretchable mold
JP3084367B1 (en) * 1999-03-17 2000-09-04 キヤノン販売株式会社 Method of forming interlayer insulating film and semiconductor device
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
JP2001244467A (en) * 2000-02-28 2001-09-07 Hitachi Ltd Coplanar semiconductor device, display device using it, and method for its manufacture
KR100486333B1 (en) * 2000-07-21 2005-04-29 가부시끼가이샤 한도따이 프로세스 켄큐쇼 Semiconductor apparatus and method of manufacturing the same
US6448186B1 (en) * 2000-10-06 2002-09-10 Novellus Systems, Inc. Method and apparatus for use of hydrogen and silanes in plasma
US6537923B1 (en) * 2000-10-31 2003-03-25 Lsi Logic Corporation Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines
US6582890B2 (en) * 2001-03-05 2003-06-24 Sandia Corporation Multiple wavelength photolithography for preparing multilayer microstructures
US6627111B2 (en) * 2001-03-06 2003-09-30 International Business Machines Corp. Organic light emitting displays and new fluorescent compounds
US6472333B2 (en) * 2001-03-28 2002-10-29 Applied Materials, Inc. Silicon carbide cap layers for low dielectric constant silicon oxide layers
US6669454B2 (en) * 2001-06-05 2003-12-30 Wisconsin Alumni Research Foundation Microfluidic actuation method and apparatus
US6634732B2 (en) * 2001-09-11 2003-10-21 Hewlett-Packard Development Company, L.P. Thermoplastic polymer film sealing of nozzles on fluid ejection devices and method
US6698868B2 (en) * 2001-10-31 2004-03-02 Hewlett-Packard Development Company, L.P. Thermal drop generator for ultra-small droplets
US6778718B2 (en) * 2001-11-09 2004-08-17 Corning Incorporated Alignment of active optical components with waveguides

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136212A (en) * 1996-08-12 2000-10-24 The Regents Of The University Of Michigan Polymer-based micromachining for microfluidic devices
US6300988B1 (en) * 1999-03-16 2001-10-09 Hitachi, Ltd. Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode
WO2001095384A1 (en) * 2000-06-03 2001-12-13 The University Of Liverpool A method of electronic component fabrication and an electronic component
US6452207B1 (en) * 2001-03-30 2002-09-17 Lucent Technologies Inc. Organic semiconductor devices
WO2002082560A1 (en) * 2001-04-04 2002-10-17 Infineon Technologies Ag Self-aligned contact doping for organic field effect transistors
EP1263062A2 (en) * 2001-06-01 2002-12-04 Sel Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device and process of manufacturing the same

Also Published As

Publication number Publication date
DE60335772D1 (en) 2011-03-03
JP4699687B2 (en) 2011-06-15
CA2449632A1 (en) 2004-05-22
US6872588B2 (en) 2005-03-29
JP2004179655A (en) 2004-06-24
CA2449632C (en) 2009-07-07
BR0305303A (en) 2004-08-31
EP1422766A2 (en) 2004-05-26
US20040101987A1 (en) 2004-05-27
EP1422766B1 (en) 2011-01-19

Similar Documents

Publication Publication Date Title
EP1422766A3 (en) Method of fabrication of electronic devices using microfluidic channels
EP1494276A3 (en) Semiconductor device including nonvolatile memory and method for fabricating the same
EP1434264A3 (en) Semiconductor device and manufacturing method using the transfer technique
MY128437A (en) Semiconductor device and manufacturing method thereof.
EP2565924A3 (en) Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, IC card, and electronic appliance
EP1443556A3 (en) Method of manufacturing thin film element, thin film transistor circuit substrate, active matrix display device, electro-optical device, and electronic apparatus
EP1758166A3 (en) Interposer and method for producing the same and electronic device
EP1020920A3 (en) Semiconductor device having a driver TFT and a pixel TFT on a common substrate and manufacturing method thereof
EP1435661A3 (en) Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof
EP1315209A3 (en) Organic EL display device and method of manufacturing the same
SG96637A1 (en) Thin film transistor, method of producing the transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device
EP2302614A3 (en) Active matrix electroluminescent display device and method for driving the same
EP1255303A4 (en) Light-emitting or light-detecting semiconductor module and method of manufacture thereof
WO2005050711A3 (en) A method for fabricating semiconductor devices using strained silicon bearing material
EP2690663A3 (en) Method of manufacturing thin film transistor array panel
EP1396676A3 (en) Serially connecting OLED devices for area illumination
EP2290642A3 (en) Semiconductor device for a TFTdisplay matrix
EP1367659A3 (en) Organic field effect transistor
EP1526567A3 (en) Bonded semiconductor device having alignment mark and fabrication method for the same
EP1873786A3 (en) Thin film semiconductor device and manufacturing method
GB0211424D0 (en) Circuit fabrication method
EP2273547A3 (en) Gate-induced strain for performance improvement of a cmos semiconductor apparatus
EP1650807A3 (en) Thin film transistor, electro-optical device and electronic apparatus
EP1686622A3 (en) Semiconductor device and manufacturing method of the same
EP1503421A3 (en) Solid-state imaging device and method for manufacturing the same

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 51/00 20060101AFI20070502BHEP

17P Request for examination filed

Effective date: 20071206

AKX Designation fees paid

Designated state(s): DE FR GB

17Q First examination report despatched

Effective date: 20080128

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/28 20060101AFI20100519BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 60335772

Country of ref document: DE

Date of ref document: 20110303

Kind code of ref document: P

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 60335772

Country of ref document: DE

Effective date: 20110303

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20111020

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 60335772

Country of ref document: DE

Effective date: 20111020

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20151027

Year of fee payment: 13

Ref country code: DE

Payment date: 20151022

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20151023

Year of fee payment: 13

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60335772

Country of ref document: DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20161121

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20170731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161121

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170601