EP1422766A3 - Method of fabrication of electronic devices using microfluidic channels - Google Patents
Method of fabrication of electronic devices using microfluidic channels Download PDFInfo
- Publication number
- EP1422766A3 EP1422766A3 EP03026733A EP03026733A EP1422766A3 EP 1422766 A3 EP1422766 A3 EP 1422766A3 EP 03026733 A EP03026733 A EP 03026733A EP 03026733 A EP03026733 A EP 03026733A EP 1422766 A3 EP1422766 A3 EP 1422766A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- microfluidic channels
- fabrication
- electronic devices
- devices
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/303,551 US6872588B2 (en) | 2002-11-22 | 2002-11-22 | Method of fabrication of electronic devices using microfluidic channels |
US303551 | 2002-11-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1422766A2 EP1422766A2 (en) | 2004-05-26 |
EP1422766A3 true EP1422766A3 (en) | 2007-06-06 |
EP1422766B1 EP1422766B1 (en) | 2011-01-19 |
Family
ID=32229935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03026733A Expired - Lifetime EP1422766B1 (en) | 2002-11-22 | 2003-11-21 | Method of fabrication of electronic devices using microfluidic channels |
Country Status (6)
Country | Link |
---|---|
US (1) | US6872588B2 (en) |
EP (1) | EP1422766B1 (en) |
JP (1) | JP4699687B2 (en) |
BR (1) | BR0305303A (en) |
CA (1) | CA2449632C (en) |
DE (1) | DE60335772D1 (en) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7087444B2 (en) * | 2002-12-16 | 2006-08-08 | Palo Alto Research Center Incorporated | Method for integration of microelectronic components with microfluidic devices |
KR100669802B1 (en) * | 2004-12-04 | 2007-01-16 | 삼성에스디아이 주식회사 | A thin film transistor, a method for preparing the thin film transistor and a flat panel display device employing the same |
TWI254027B (en) * | 2004-12-07 | 2006-05-01 | Ind Tech Res Inst | Micro device and manufacturing method thereof |
JP4602920B2 (en) * | 2005-03-19 | 2010-12-22 | 三星モバイルディスプレイ株式會社 | ORGANIC THIN FILM TRANSISTOR, FLAT DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR |
EP2264803B1 (en) * | 2005-05-09 | 2019-01-30 | Pragmatic Printing Ltd | Organic rectifier circuit |
GB0509410D0 (en) * | 2005-05-09 | 2005-06-15 | Univ Manchester | Low-mobility electronics devices |
KR20070009013A (en) * | 2005-07-14 | 2007-01-18 | 삼성전자주식회사 | Flat panel display and method of making flat panel display |
US7365022B2 (en) * | 2006-01-20 | 2008-04-29 | Palo Alto Research Center Incorporated | Additive printed mask process and structures produced thereby |
US7498119B2 (en) * | 2006-01-20 | 2009-03-03 | Palo Alto Research Center Incorporated | Process for forming a feature by undercutting a printed mask |
US7384568B2 (en) * | 2006-03-31 | 2008-06-10 | Palo Alto Research Center Incorporated | Method of forming a darkfield etch mask |
US8821799B2 (en) | 2007-01-26 | 2014-09-02 | Palo Alto Research Center Incorporated | Method and system implementing spatially modulated excitation or emission for particle characterization with enhanced sensitivity |
US9164037B2 (en) * | 2007-01-26 | 2015-10-20 | Palo Alto Research Center Incorporated | Method and system for evaluation of signals received from spatially modulated excitation and emission to accurately determine particle positions and distances |
MY158347A (en) * | 2007-02-15 | 2016-09-30 | Massachusetts Inst Technology | Solar cells with textured surfaces |
WO2008119066A1 (en) * | 2007-03-28 | 2008-10-02 | The Regents Of The University Of California | Single-sided lateral-field and phototransistor-based optoelectronic tweezers |
US8551556B2 (en) * | 2007-11-20 | 2013-10-08 | Palo Alto Research Center Incorporated | Method for obtaining controlled sidewall profile in print-patterned structures |
EP2215453A1 (en) * | 2007-11-22 | 2010-08-11 | Koninklijke Philips Electronics N.V. | Combined optical and electrical sensor cartridges |
SG153674A1 (en) * | 2007-12-11 | 2009-07-29 | Nanyang Polytechnic | A method of doping and apparatus for doping |
US8629981B2 (en) | 2008-02-01 | 2014-01-14 | Palo Alto Research Center Incorporated | Analyzers with time variation based on color-coded spatial modulation |
US8373860B2 (en) | 2008-02-01 | 2013-02-12 | Palo Alto Research Center Incorporated | Transmitting/reflecting emanating light with time variation |
EP2279526A4 (en) * | 2008-04-18 | 2015-11-04 | 1366 Tech Inc | Methods to pattern diffusion layers in solar cells and solar cells made by such methods |
GB0818531D0 (en) * | 2008-10-09 | 2008-11-19 | Eastman Kodak Co | Interconnection of adjacent devices |
US8136922B2 (en) * | 2009-09-01 | 2012-03-20 | Xerox Corporation | Self-assembly monolayer modified printhead |
US8679984B2 (en) | 2011-06-30 | 2014-03-25 | Samsung Electronics Co., Ltd. | Method of manufacturing electric device, array of electric devices, and manufacturing method therefor |
US8723140B2 (en) | 2011-08-09 | 2014-05-13 | Palo Alto Research Center Incorporated | Particle analyzer with spatial modulation and long lifetime bioprobes |
US9029800B2 (en) | 2011-08-09 | 2015-05-12 | Palo Alto Research Center Incorporated | Compact analyzer with spatial modulation and multiple intensity modulated excitation sources |
JP2013098487A (en) * | 2011-11-04 | 2013-05-20 | Sony Corp | Manufacturing method of organic semiconductor device, organic semiconductor device and electronic apparatus |
CN105116038B (en) * | 2015-07-20 | 2018-06-29 | 深圳大学 | One kind is based on organic semi-conductor immune detection integrated chip and preparation method thereof |
CN107046097B (en) * | 2017-05-11 | 2019-05-14 | 京东方科技集团股份有限公司 | Display panel manufacturing method, the manufacturing equipment of display panel and display panel |
DE112017008144T5 (en) * | 2017-09-29 | 2020-07-16 | Intel Corporation | SELF-ALIGNED CONTACTS FOR THIN FILM TRANSISTORS |
CN112255666B (en) * | 2020-10-23 | 2022-11-18 | 中国工程物理研究院激光聚变研究中心 | Neutron sensitive microchannel plate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6136212A (en) * | 1996-08-12 | 2000-10-24 | The Regents Of The University Of Michigan | Polymer-based micromachining for microfluidic devices |
US6300988B1 (en) * | 1999-03-16 | 2001-10-09 | Hitachi, Ltd. | Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode |
WO2001095384A1 (en) * | 2000-06-03 | 2001-12-13 | The University Of Liverpool | A method of electronic component fabrication and an electronic component |
US6452207B1 (en) * | 2001-03-30 | 2002-09-17 | Lucent Technologies Inc. | Organic semiconductor devices |
WO2002082560A1 (en) * | 2001-04-04 | 2002-10-17 | Infineon Technologies Ag | Self-aligned contact doping for organic field effect transistors |
EP1263062A2 (en) * | 2001-06-01 | 2002-12-04 | Sel Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device and process of manufacturing the same |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910006164B1 (en) * | 1987-03-18 | 1991-08-16 | 가부시키가이샤 도시바 | Making method and there device of thin film |
JPH03145767A (en) * | 1989-10-31 | 1991-06-20 | Fujitsu Ltd | Manufacture of thin film transistor |
US5699157A (en) * | 1996-07-16 | 1997-12-16 | Caliper Technologies Corp. | Fourier detection of species migrating in a microchannel |
US6152071A (en) * | 1996-12-11 | 2000-11-28 | Canon Kabushiki Kaisha | High-frequency introducing means, plasma treatment apparatus, and plasma treatment method |
JPH10256558A (en) * | 1997-03-17 | 1998-09-25 | Toshiba Corp | Manufacture of thin-film transistor array, electronic device and thin-film transistor |
US6669803B1 (en) * | 1997-10-03 | 2003-12-30 | Digital Optics Corp. | Simultaneous provision of controlled height bonding material at a wafer level and associated structures |
US6685809B1 (en) * | 1999-02-04 | 2004-02-03 | Ut-Battelle, Llc | Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels |
US6033202A (en) | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
KR100308851B1 (en) * | 1998-11-04 | 2001-12-17 | 구본준, 론 위라하디락사 | Method of forming insulating film pattern of liquid crystal display device |
US6247986B1 (en) * | 1998-12-23 | 2001-06-19 | 3M Innovative Properties Company | Method for precise molding and alignment of structures on a substrate using a stretchable mold |
JP3084367B1 (en) * | 1999-03-17 | 2000-09-04 | キヤノン販売株式会社 | Method of forming interlayer insulating film and semiconductor device |
US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
JP2001244467A (en) * | 2000-02-28 | 2001-09-07 | Hitachi Ltd | Coplanar semiconductor device, display device using it, and method for its manufacture |
KR100486333B1 (en) * | 2000-07-21 | 2005-04-29 | 가부시끼가이샤 한도따이 프로세스 켄큐쇼 | Semiconductor apparatus and method of manufacturing the same |
US6448186B1 (en) * | 2000-10-06 | 2002-09-10 | Novellus Systems, Inc. | Method and apparatus for use of hydrogen and silanes in plasma |
US6537923B1 (en) * | 2000-10-31 | 2003-03-25 | Lsi Logic Corporation | Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines |
US6582890B2 (en) * | 2001-03-05 | 2003-06-24 | Sandia Corporation | Multiple wavelength photolithography for preparing multilayer microstructures |
US6627111B2 (en) * | 2001-03-06 | 2003-09-30 | International Business Machines Corp. | Organic light emitting displays and new fluorescent compounds |
US6472333B2 (en) * | 2001-03-28 | 2002-10-29 | Applied Materials, Inc. | Silicon carbide cap layers for low dielectric constant silicon oxide layers |
US6669454B2 (en) * | 2001-06-05 | 2003-12-30 | Wisconsin Alumni Research Foundation | Microfluidic actuation method and apparatus |
US6634732B2 (en) * | 2001-09-11 | 2003-10-21 | Hewlett-Packard Development Company, L.P. | Thermoplastic polymer film sealing of nozzles on fluid ejection devices and method |
US6698868B2 (en) * | 2001-10-31 | 2004-03-02 | Hewlett-Packard Development Company, L.P. | Thermal drop generator for ultra-small droplets |
US6778718B2 (en) * | 2001-11-09 | 2004-08-17 | Corning Incorporated | Alignment of active optical components with waveguides |
-
2002
- 2002-11-22 US US10/303,551 patent/US6872588B2/en not_active Expired - Fee Related
-
2003
- 2003-11-17 CA CA002449632A patent/CA2449632C/en not_active Expired - Fee Related
- 2003-11-20 JP JP2003390153A patent/JP4699687B2/en not_active Expired - Fee Related
- 2003-11-21 DE DE60335772T patent/DE60335772D1/en not_active Expired - Lifetime
- 2003-11-21 EP EP03026733A patent/EP1422766B1/en not_active Expired - Lifetime
- 2003-11-21 BR BR0305303-2A patent/BR0305303A/en active Search and Examination
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6136212A (en) * | 1996-08-12 | 2000-10-24 | The Regents Of The University Of Michigan | Polymer-based micromachining for microfluidic devices |
US6300988B1 (en) * | 1999-03-16 | 2001-10-09 | Hitachi, Ltd. | Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode |
WO2001095384A1 (en) * | 2000-06-03 | 2001-12-13 | The University Of Liverpool | A method of electronic component fabrication and an electronic component |
US6452207B1 (en) * | 2001-03-30 | 2002-09-17 | Lucent Technologies Inc. | Organic semiconductor devices |
WO2002082560A1 (en) * | 2001-04-04 | 2002-10-17 | Infineon Technologies Ag | Self-aligned contact doping for organic field effect transistors |
EP1263062A2 (en) * | 2001-06-01 | 2002-12-04 | Sel Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device and process of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
DE60335772D1 (en) | 2011-03-03 |
JP4699687B2 (en) | 2011-06-15 |
CA2449632A1 (en) | 2004-05-22 |
US6872588B2 (en) | 2005-03-29 |
JP2004179655A (en) | 2004-06-24 |
CA2449632C (en) | 2009-07-07 |
BR0305303A (en) | 2004-08-31 |
EP1422766A2 (en) | 2004-05-26 |
US20040101987A1 (en) | 2004-05-27 |
EP1422766B1 (en) | 2011-01-19 |
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