CA2341110C - Avalanche photodiode - Google Patents

Avalanche photodiode Download PDF

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Publication number
CA2341110C
CA2341110C CA002341110A CA2341110A CA2341110C CA 2341110 C CA2341110 C CA 2341110C CA 002341110 A CA002341110 A CA 002341110A CA 2341110 A CA2341110 A CA 2341110A CA 2341110 C CA2341110 C CA 2341110C
Authority
CA
Canada
Prior art keywords
layer
superlattice
light
apd
multiplication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002341110A
Other languages
English (en)
French (fr)
Other versions
CA2341110A1 (en
Inventor
Asamira Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CA2341110A1 publication Critical patent/CA2341110A1/en
Application granted granted Critical
Publication of CA2341110C publication Critical patent/CA2341110C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA002341110A 2000-03-16 2001-03-16 Avalanche photodiode Expired - Fee Related CA2341110C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000073833 2000-03-16
JP2000-073833 2000-03-16
JP2001044738A JP2001332759A (ja) 2000-03-16 2001-02-21 アバランシェフォトダイオード
JP2001-044738 2001-02-21

Publications (2)

Publication Number Publication Date
CA2341110A1 CA2341110A1 (en) 2001-09-16
CA2341110C true CA2341110C (en) 2006-01-03

Family

ID=26587668

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002341110A Expired - Fee Related CA2341110C (en) 2000-03-16 2001-03-16 Avalanche photodiode

Country Status (4)

Country Link
US (1) US6437362B2 (enExample)
EP (1) EP1134812A3 (enExample)
JP (1) JP2001332759A (enExample)
CA (1) CA2341110C (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168818A (ja) * 2001-09-18 2003-06-13 Anritsu Corp 順メサ型アバランシェフォトダイオード及びその製造方法
US6720588B2 (en) 2001-11-28 2004-04-13 Optonics, Inc. Avalanche photodiode for photon counting applications and method thereof
US6894322B2 (en) 2002-02-11 2005-05-17 Jds Uniphase Corporation Back illuminated photodiodes
US6747296B1 (en) * 2002-06-18 2004-06-08 Solid State Scientific Corporation Avalanche photodiode multiplication region and avalanche photodiode with low impact ionization rate ratio
US7840145B2 (en) 2003-06-27 2010-11-23 The Boeing Company Apparatus and methods for noise-feedback controlled optical systems
JP4796828B2 (ja) * 2005-12-06 2011-10-19 パナソニック株式会社 光伝送システム
JP5025330B2 (ja) * 2007-05-22 2012-09-12 三菱電機株式会社 半導体受光素子およびその製造方法
US8239176B2 (en) * 2008-02-13 2012-08-07 Feng Ma Simulation methods and systems for carriers having multiplications
CN107406303A (zh) * 2015-06-02 2017-11-28 日本电气硝子株式会社 玻璃
KR102868049B1 (ko) * 2020-02-03 2025-10-01 삼성전자주식회사 적외선 검출 소자 및 이를 포함하는 적외선 검출 시스템
CN112420860A (zh) * 2020-12-11 2021-02-26 武汉光谷量子技术有限公司 一种平面型apd的外延结构、apd及其制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715979B2 (ja) 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
US4942436A (en) 1988-10-31 1990-07-17 Polaroid Corporation Superlattice avalanche photodetector
JPH0821727B2 (ja) 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード
JP2670557B2 (ja) 1989-05-12 1997-10-29 日本電信電話株式会社 アバランシェフォトダイオード
JP2700492B2 (ja) 1989-08-03 1998-01-21 日本電信電話株式会社 アバランシェフォトダイオード
JP2934294B2 (ja) 1990-04-09 1999-08-16 日本電信電話株式会社 アバランシェフォトダイオード
JP2937404B2 (ja) 1990-04-18 1999-08-23 日本電気株式会社 半導体受光素子
JPH04125977A (ja) 1990-09-17 1992-04-27 Nec Corp ヘテロ多重構造アバランシ・フォトダイオード
JP2877215B2 (ja) * 1991-03-11 1999-03-31 日本電信電話株式会社 アバランシェフォトダイオ―ド
DE69229369T2 (de) * 1991-03-28 2000-01-27 Nec Corp., Tokio/Tokyo Halbleiterphotodetektor mit Lawinenmultiplikation
JPH0521829A (ja) * 1991-07-12 1993-01-29 Hitachi Ltd 半導体装置
JP2998375B2 (ja) 1991-12-20 2000-01-11 日本電気株式会社 アバランシェフォトダイオード
JPH0637350A (ja) * 1992-07-15 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> 光信号受信器
KR960001467B1 (ko) * 1992-12-22 1996-01-30 한국 전기통신공사 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors

Also Published As

Publication number Publication date
JP2001332759A (ja) 2001-11-30
CA2341110A1 (en) 2001-09-16
EP1134812A3 (en) 2003-10-01
US20020003240A1 (en) 2002-01-10
EP1134812A2 (en) 2001-09-19
US6437362B2 (en) 2002-08-20

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