CA2090096C - Semiconductor device having polysilicon thin-film - Google Patents

Semiconductor device having polysilicon thin-film

Info

Publication number
CA2090096C
CA2090096C CA002090096A CA2090096A CA2090096C CA 2090096 C CA2090096 C CA 2090096C CA 002090096 A CA002090096 A CA 002090096A CA 2090096 A CA2090096 A CA 2090096A CA 2090096 C CA2090096 C CA 2090096C
Authority
CA
Canada
Prior art keywords
size
thin film
plane
polysilicon thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA002090096A
Other languages
English (en)
French (fr)
Other versions
CA2090096A1 (en
Inventor
Michiya Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REMSEN INNOVATION LLC
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13590260&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2090096(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of CA2090096A1 publication Critical patent/CA2090096A1/en
Application granted granted Critical
Publication of CA2090096C publication Critical patent/CA2090096C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CA002090096A 1992-02-28 1993-02-22 Semiconductor device having polysilicon thin-film Expired - Lifetime CA2090096C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4075921A JP2935446B2 (ja) 1992-02-28 1992-02-28 半導体装置
JP4-75921 1992-02-28

Publications (2)

Publication Number Publication Date
CA2090096A1 CA2090096A1 (en) 1993-08-29
CA2090096C true CA2090096C (en) 1998-08-11

Family

ID=13590260

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002090096A Expired - Lifetime CA2090096C (en) 1992-02-28 1993-02-22 Semiconductor device having polysilicon thin-film

Country Status (9)

Country Link
US (1) US5949091A (https=)
EP (1) EP0558075B1 (https=)
JP (1) JP2935446B2 (https=)
KR (1) KR970004844B1 (https=)
CN (1) CN1026041C (https=)
CA (1) CA2090096C (https=)
DE (1) DE69333592T2 (https=)
SG (1) SG55060A1 (https=)
TW (1) TW335216U (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW264575B (https=) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US6059873A (en) 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
US6100119A (en) * 1995-08-31 2000-08-08 Lg Electronics Inc. Thin film transistor and method for fabricating the same
JPH11145056A (ja) * 1997-11-07 1999-05-28 Sony Corp 半導体材料
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP4437570B2 (ja) * 1999-07-12 2010-03-24 株式会社ルネサステクノロジ 半導体装置及び半導体装置の製造方法
US6229611B1 (en) * 1999-09-20 2001-05-08 United Microelectronics Corp. Method of detecting a transparent quartz wafer in a semiconductor equipment
JP4045731B2 (ja) * 2000-09-25 2008-02-13 株式会社日立製作所 薄膜半導体素子の製造方法
JP6941473B2 (ja) * 2017-04-26 2021-09-29 株式会社日本製鋼所 ディスプレイの製造方法、ディスプレイ及び液晶テレビ
US11024736B2 (en) * 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194517A (en) * 1981-05-27 1982-11-30 Toshiba Corp Manufacture of semiconductor crystal film
JPH0620122B2 (ja) * 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子
US4649624A (en) * 1983-10-03 1987-03-17 The United States Of America As Represented By The Secretary Of The Navy Fabrication of semiconductor devices in recrystallized semiconductor films on electrooptic substrates
CA1239706A (en) * 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
JPS63292618A (ja) * 1987-05-26 1988-11-29 Nec Corp Ｓｏｉ基板の製造方法
JP2880175B2 (ja) * 1988-11-30 1999-04-05 株式会社日立製作所 レーザアニール方法及び薄膜半導体装置
US5200630A (en) * 1989-04-13 1993-04-06 Sanyo Electric Co., Ltd. Semiconductor device
JP2655924B2 (ja) * 1990-02-19 1997-09-24 キヤノン株式会社 多結晶半導体薄膜形成方法
JP2973492B2 (ja) * 1990-08-22 1999-11-08 ソニー株式会社 半導体薄膜の結晶化方法
EP0499979A3 (en) * 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH04267517A (ja) * 1991-02-22 1992-09-24 Toshiba Corp 半導体薄膜の形成方法
JPH04311038A (ja) * 1991-04-09 1992-11-02 Toshiba Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
SG55060A1 (en) 1998-12-21
EP0558075A3 (https=) 1994-01-19
CN1026041C (zh) 1994-09-28
KR970004844B1 (ko) 1997-04-04
CN1076551A (zh) 1993-09-22
US5949091A (en) 1999-09-07
DE69333592D1 (de) 2004-09-23
DE69333592T2 (de) 2005-01-05
EP0558075A2 (en) 1993-09-01
JPH05243576A (ja) 1993-09-21
CA2090096A1 (en) 1993-08-29
HK1013521A1 (en) 1999-08-27
JP2935446B2 (ja) 1999-08-16
EP0558075B1 (en) 2004-08-18
KR930018754A (ko) 1993-09-22
TW335216U (en) 1998-06-21

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