CA2043100A1 - Circuit for providing dv/dt immunity - Google Patents

Circuit for providing dv/dt immunity

Info

Publication number
CA2043100A1
CA2043100A1 CA002043100A CA2043100A CA2043100A1 CA 2043100 A1 CA2043100 A1 CA 2043100A1 CA 002043100 A CA002043100 A CA 002043100A CA 2043100 A CA2043100 A CA 2043100A CA 2043100 A1 CA2043100 A1 CA 2043100A1
Authority
CA
Canada
Prior art keywords
circuit
output
pulse
transistor
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002043100A
Other languages
English (en)
French (fr)
Inventor
Daniel M. Kinzer
David Tam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of CA2043100A1 publication Critical patent/CA2043100A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/02—Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
    • G01R29/027—Indicating that a pulse characteristic is either above or below a predetermined value or within or beyond a predetermined range of values
    • G01R29/0273—Indicating that a pulse characteristic is either above or below a predetermined value or within or beyond a predetermined range of values the pulse characteristic being duration, i.e. width (indicating that frequency of pulses is above or below a certain limit)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Power Conversion In General (AREA)
CA002043100A 1990-05-24 1991-05-23 Circuit for providing dv/dt immunity Abandoned CA2043100A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US528,145 1983-08-31
US52814590A 1990-05-24 1990-05-24

Publications (1)

Publication Number Publication Date
CA2043100A1 true CA2043100A1 (en) 1991-11-25

Family

ID=24104431

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002043100A Abandoned CA2043100A1 (en) 1990-05-24 1991-05-23 Circuit for providing dv/dt immunity

Country Status (5)

Country Link
JP (1) JP3092862B2 (it)
CA (1) CA2043100A1 (it)
DE (1) DE4114176A1 (it)
GB (1) GB2244400B (it)
IT (1) IT1248393B (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2763237B2 (ja) * 1992-11-02 1998-06-11 株式会社日立製作所 レベルシフト回路及びこれを用いたインバータ装置
DE4319977A1 (de) * 1993-06-11 1994-12-15 Mikroelektronik Und Technologi Schaltungsanordnung zur Unterdrückung von dynamischen Störungen in digitalen Schaltungen
US5545955A (en) * 1994-03-04 1996-08-13 International Rectifier Corporation MOS gate driver for ballast circuits
US5514981A (en) * 1994-07-12 1996-05-07 International Rectifier Corporation Reset dominant level-shift circuit for noise immunity
US5550436A (en) * 1994-09-01 1996-08-27 International Rectifier Corporation MOS gate driver integrated circuit for ballast circuits
JP3429937B2 (ja) * 1996-01-12 2003-07-28 三菱電機株式会社 半導体装置
JP3635975B2 (ja) 1999-03-02 2005-04-06 富士電機デバイステクノロジー株式会社 レベルシフト回路
DE19949389C1 (de) * 1999-10-13 2001-02-01 Gruendl & Hoffmann Ansteuerschaltung
JP2001196906A (ja) 2000-01-14 2001-07-19 Mitsubishi Electric Corp 保護回路、パルス発生回路および駆動回路
JP2003169465A (ja) * 2001-11-30 2003-06-13 Toshiba Corp ゲート駆動回路、および電力変換装置
JP4088466B2 (ja) * 2002-03-19 2008-05-21 三菱電機株式会社 パワーデバイスの駆動回路
JP2004215493A (ja) * 2002-12-20 2004-07-29 Matsushita Electric Ind Co Ltd ゲートドライバ、そのゲートドライバを含むモータ駆動装置、及びそのモータ駆動装置を備える機器
WO2004057748A2 (en) 2002-12-20 2004-07-08 Matsushita Electric Industrial Co., Ltd. Gate driver, motor driving device including the gate driver, and apparatus equipped with the motor driving device
JP4091038B2 (ja) 2003-11-19 2008-05-28 松下電器産業株式会社 プラズマディスプレイのサステインドライバ、及びその制御回路
JP4360310B2 (ja) 2004-10-22 2009-11-11 サンケン電気株式会社 駆動装置
JP2007243254A (ja) * 2006-03-06 2007-09-20 Matsushita Electric Ind Co Ltd スイッチ素子駆動回路
JP4531075B2 (ja) * 2007-05-16 2010-08-25 株式会社日立製作所 半導体回路
JP5326927B2 (ja) 2009-08-19 2013-10-30 富士電機株式会社 レベルシフト回路
JP5018866B2 (ja) 2009-11-19 2012-09-05 サンケン電気株式会社 レベルシフト回路及びスイッチング電源装置
JP5466545B2 (ja) 2010-03-17 2014-04-09 株式会社 日立パワーデバイス レベルシフト回路、および電力変換装置
US8044699B1 (en) 2010-07-19 2011-10-25 Polar Semiconductor, Inc. Differential high voltage level shifter
JP5880225B2 (ja) * 2012-04-02 2016-03-08 富士電機株式会社 半導体装置
US8633745B1 (en) 2012-08-30 2014-01-21 Allegro Microsystems, Llc Circuits and related techniques for driving a high side of a half bridge circuit
JP5862520B2 (ja) * 2012-08-31 2016-02-16 三菱電機株式会社 逆レベルシフト回路
US9571093B2 (en) 2014-09-16 2017-02-14 Navitas Semiconductor, Inc. Half bridge driver circuits
US9537338B2 (en) 2014-09-16 2017-01-03 Navitas Semiconductor Inc. Level shift and inverter circuits for GaN devices
EP3157153B1 (en) * 2015-10-15 2021-12-22 Nxp B.V. Dc-dc converters having a half-bridge node, controllers therefor and methods of controlling the same
US9831867B1 (en) 2016-02-22 2017-11-28 Navitas Semiconductor, Inc. Half bridge driver circuits
US10230356B2 (en) 2017-02-27 2019-03-12 Allegro Microsystems, Llc High-side output transistor circuit
CN111130533B (zh) * 2020-01-10 2023-03-24 电子科技大学 一种高速高dv/dt抑制能力的电平位移器电路
EP4224712A1 (en) * 2022-02-08 2023-08-09 NXP USA, Inc. Circuits for inverters and pull-up/pull-down circuits

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875516A (en) * 1973-10-26 1975-04-01 Rank Organisation Ltd Discriminator circuits

Also Published As

Publication number Publication date
ITMI911246A1 (it) 1992-11-08
GB2244400A (en) 1991-11-27
GB2244400B (en) 1994-07-06
JPH04230117A (ja) 1992-08-19
JP3092862B2 (ja) 2000-09-25
GB9110324D0 (en) 1991-07-03
ITMI911246A0 (it) 1991-05-08
DE4114176A1 (de) 1991-11-28
IT1248393B (it) 1995-01-11

Similar Documents

Publication Publication Date Title
CA2043100A1 (en) Circuit for providing dv/dt immunity
US5514981A (en) Reset dominant level-shift circuit for noise immunity
US6501321B2 (en) Level shift circuit
JP3117696B2 (ja) 電子回路
US5818281A (en) Semiconductor circuit having turn-on prevention capability of switching semiconductor device during off cycle thereof by undesired transient voltages
EP0649579B1 (en) Circuit for driving a half-bridge
KR100428987B1 (ko) 구동제어장치
US5552731A (en) Integrated control circuit with a level shifter for switching an electronic switch
JP2892815B2 (ja) Ｉｇｂｔの駆動回路
US5105099A (en) Level shift circuit with common mode rejection
JP3927173B2 (ja) Ｄｖ／ｄｔブーストによるノイズ耐力改善のための回路
JPH0947015A (ja) 自己消弧形半導体素子の駆動回路
EP0800722B1 (en) Cmos driver circuit
US4684824A (en) Capacitive load driver circuit
JPH06153533A (ja) レベルシフト回路及びこれを用いたインバータ装置
US6917227B1 (en) Efficient gate driver for power device
JPH0393457A (ja) 電圧駆動形素子の駆動回路
JP3147656B2 (ja) 半導体素子のオンオフ制御回路
US5519339A (en) Complementary signal BiCMOS line driver with low skew
US4880995A (en) Electrically isolated MOSFET drive circuit
JPH02179262A (ja) 電圧駆動形半導体素子のゲート駆動回路
EP0743648A1 (en) Output stage for integrated circuits, particularly for electronic memories
JPH0520992B2 (it)
EP0263945B1 (en) Impulse generator

Legal Events

Date Code Title Description
FZDE Discontinued