CA1285664C - Lithographic process using mask with small opaque or transparent elements - Google Patents
Lithographic process using mask with small opaque or transparent elementsInfo
- Publication number
- CA1285664C CA1285664C CA000567723A CA567723A CA1285664C CA 1285664 C CA1285664 C CA 1285664C CA 000567723 A CA000567723 A CA 000567723A CA 567723 A CA567723 A CA 567723A CA 1285664 C CA1285664 C CA 1285664C
- Authority
- CA
- Canada
- Prior art keywords
- mask
- elements
- lithographic
- opaque
- resolution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008569 process Effects 0.000 title claims abstract description 25
- 238000002834 transmittance Methods 0.000 claims abstract description 19
- 238000003384 imaging method Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000001459 lithography Methods 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 101100070542 Podospora anserina het-s gene Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005316 response function Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/056,161 US4902899A (en) | 1987-06-01 | 1987-06-01 | Lithographic process having improved image quality |
| US07/056,161 | 1987-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1285664C true CA1285664C (en) | 1991-07-02 |
Family
ID=22002573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000567723A Expired - Lifetime CA1285664C (en) | 1987-06-01 | 1988-05-26 | Lithographic process using mask with small opaque or transparent elements |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4902899A (https=) |
| EP (1) | EP0293643B1 (https=) |
| JP (1) | JPS63304257A (https=) |
| CA (1) | CA1285664C (https=) |
| DE (1) | DE3854211T2 (https=) |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| NL8903108A (nl) * | 1989-12-20 | 1991-07-16 | Philips Nv | Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. |
| SE465899B (sv) * | 1990-01-29 | 1991-11-11 | Misomex Ab | Utbraenningsram foer kopiering av en genomlyslig originalfilm |
| JP2634289B2 (ja) * | 1990-04-18 | 1997-07-23 | 三菱電機株式会社 | 位相シフトマスクの修正方法 |
| JP2697946B2 (ja) * | 1990-04-24 | 1998-01-19 | 三菱電機株式会社 | フォトマスク |
| JP2892765B2 (ja) * | 1990-04-27 | 1999-05-17 | 株式会社日立製作所 | パターン構造を有する素子の製造方法 |
| US5328807A (en) * | 1990-06-11 | 1994-07-12 | Hitichi, Ltd. | Method of forming a pattern |
| JP3245882B2 (ja) * | 1990-10-24 | 2002-01-15 | 株式会社日立製作所 | パターン形成方法、および投影露光装置 |
| JPH04242734A (ja) * | 1990-12-28 | 1992-08-31 | Dainippon Screen Mfg Co Ltd | 製版カメラの露光制御方法及び露光制御装置 |
| EP0500456B1 (en) * | 1991-02-19 | 1998-05-06 | Fujitsu Limited | Projection exposure method and an optical mask for use in projection exposure |
| US5305054A (en) | 1991-02-22 | 1994-04-19 | Canon Kabushiki Kaisha | Imaging method for manufacture of microdevices |
| US6128068A (en) * | 1991-02-22 | 2000-10-03 | Canon Kabushiki Kaisha | Projection exposure apparatus including an illumination optical system that forms a secondary light source with a particular intensity distribution |
| US5208124A (en) * | 1991-03-19 | 1993-05-04 | Hewlett-Packard Company | Method of making a mask for proximity effect correction in projection lithography |
| US5217830A (en) * | 1991-03-26 | 1993-06-08 | Micron Technology, Inc. | Method of fabricating phase shifting reticles using ion implantation |
| US5194344A (en) * | 1991-03-26 | 1993-03-16 | Micron Technology, Inc. | Method of fabricating phase shift reticles including chemically mechanically planarizing |
| US5194346A (en) * | 1991-04-15 | 1993-03-16 | Micron Technology, Inc. | Method of fabricating phase shifting reticles with an accurate phase shift layer |
| US5194345A (en) * | 1991-05-14 | 1993-03-16 | Micron Technology, Inc. | Method of fabricating phase shift reticles |
| US5240796A (en) * | 1991-07-09 | 1993-08-31 | Micron Technology, Inc. | Method of fabricating a chromeless phase shift reticle |
| JPH0536586A (ja) * | 1991-08-02 | 1993-02-12 | Canon Inc | 像投影方法及び該方法を用いた半導体デバイスの製造方法 |
| US5246800A (en) * | 1991-09-12 | 1993-09-21 | Etec Systems, Inc. | Discrete phase shift mask writing |
| US5328785A (en) * | 1992-02-10 | 1994-07-12 | Litel Instruments | High power phase masks for imaging systems |
| JP3210123B2 (ja) * | 1992-03-27 | 2001-09-17 | キヤノン株式会社 | 結像方法及び該方法を用いたデバイス製造方法 |
| JP3278896B2 (ja) * | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| US5547787A (en) * | 1992-04-22 | 1996-08-20 | Kabushiki Kaisha Toshiba | Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask |
| JP2667940B2 (ja) * | 1992-04-27 | 1997-10-27 | 三菱電機株式会社 | マスク検査方法およびマスク検出装置 |
| US5310623A (en) * | 1992-11-27 | 1994-05-10 | Lockheed Missiles & Space Company, Inc. | Method for fabricating microlenses |
| JPH06188270A (ja) * | 1992-12-15 | 1994-07-08 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法及びパターン転写マスク |
| WO1994017449A1 (en) * | 1993-01-21 | 1994-08-04 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| KR0135729B1 (en) * | 1993-02-12 | 1998-04-24 | Mitsubishi Electric Corp | Attenuating type phase shifting mask and method of manufacturing thereof |
| US5593801A (en) * | 1993-02-12 | 1997-01-14 | Mitsubishi Denki Kabushiki Kaisha | Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask |
| US5362584A (en) * | 1993-04-02 | 1994-11-08 | International Business Machines Corporation | Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas |
| GB2277998A (en) * | 1993-05-13 | 1994-11-16 | Marconi Gec Ltd | Mask and apparatus for producing microlenses |
| JP2718893B2 (ja) * | 1993-06-04 | 1998-02-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 移相マスクの移相欠陥を修復する方法 |
| KR970007822B1 (ko) * | 1993-11-15 | 1997-05-17 | 현대전자산업 주식회사 | 반도체 장치의 제조 방법 |
| US6159641A (en) * | 1993-12-16 | 2000-12-12 | International Business Machines Corporation | Method for the repair of defects in lithographic masks |
| US5523580A (en) * | 1993-12-23 | 1996-06-04 | International Business Machines Corporation | Reticle having a number of subfields |
| KR0138297B1 (ko) * | 1994-02-07 | 1998-06-01 | 김광호 | 포토 마스크 및 그 제조 방법 |
| US5539175A (en) * | 1994-03-21 | 1996-07-23 | Litel Instruments | Apparatus and process for optically ablated openings having designed profile |
| US5465859A (en) * | 1994-04-28 | 1995-11-14 | International Business Machines Corporation | Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
| US5537648A (en) * | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
| JPH08297692A (ja) * | 1994-09-16 | 1996-11-12 | Mitsubishi Electric Corp | 光近接補正装置及び方法並びにパタン形成方法 |
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| KR0158904B1 (ko) * | 1994-12-02 | 1999-02-01 | 김주용 | 콘택마스크 |
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| US5679483A (en) * | 1994-12-20 | 1997-10-21 | Siemens Aktiengesellschaft | Embedded phase shifting photomasks and method for manufacturing same |
| KR100190762B1 (ko) * | 1995-03-24 | 1999-06-01 | 김영환 | 사입사용 노광마스크 |
| JPH09167753A (ja) * | 1995-08-14 | 1997-06-24 | Toshiba Corp | 半導体基板の表面の平坦化方法とその装置 |
| US5866913A (en) * | 1995-12-19 | 1999-02-02 | International Business Machines Corporation | Proximity correction dose modulation for E-beam projection lithography |
| US5869212A (en) * | 1996-05-31 | 1999-02-09 | Kabushiki Kaisha Toshiba | Integrated circuit photofabrication masks and methods for making same |
| US5747817A (en) * | 1996-09-09 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | One-step method for on-line lithographic pattern inspection |
| US5821013A (en) * | 1996-12-13 | 1998-10-13 | Symbios, Inc. | Variable step height control of lithographic patterning through transmitted light intensity variation |
| US6440644B1 (en) | 1997-10-15 | 2002-08-27 | Kabushiki Kaisha Toshiba | Planarization method and system using variable exposure |
| US6534242B2 (en) | 1997-11-06 | 2003-03-18 | Canon Kabushiki Kaisha | Multiple exposure device formation |
| US6377337B1 (en) | 1998-05-02 | 2002-04-23 | Canon Kabushiki Kaisha | Projection exposure apparatus |
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| US4278755A (en) * | 1978-04-10 | 1981-07-14 | Lumin, Inc. | Halftone screen and method of using same |
| US4308326A (en) * | 1979-03-28 | 1981-12-29 | Wirth John L | Halftone contact screen and photographic method of making the screen |
| US4231811A (en) * | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
| JPS5689742A (en) * | 1979-12-22 | 1981-07-21 | Fujitsu Ltd | Mask for exposure |
| US4262070A (en) * | 1980-04-18 | 1981-04-14 | Liu Hua Kuang | Method of making halftone contact screens |
| JPS58102939A (ja) * | 1981-12-15 | 1983-06-18 | Canon Inc | マスクアライナ−用マスク及びマスクアライナ− |
| US4456371A (en) * | 1982-06-30 | 1984-06-26 | International Business Machines Corporation | Optical projection printing threshold leveling arrangement |
| US4417948A (en) * | 1982-07-09 | 1983-11-29 | International Business Machines Corporation | Self developing, photoetching of polyesters by far UV radiation |
| US4600666A (en) * | 1983-01-12 | 1986-07-15 | Zink Edmund S | Integrated photoscreen for making a halftone reproduction printing plate from a photograph |
| JPS59202632A (ja) * | 1983-04-30 | 1984-11-16 | Fuji Electric Corp Res & Dev Ltd | フオトマスク |
| JPS61117544A (ja) * | 1984-11-14 | 1986-06-04 | Hitachi Ltd | ホトマスク |
| GB8519910D0 (en) * | 1985-08-08 | 1985-09-18 | Secr Defence | Photolithographic masks |
-
1987
- 1987-06-01 US US07/056,161 patent/US4902899A/en not_active Expired - Lifetime
-
1988
- 1988-04-20 JP JP63095824A patent/JPS63304257A/ja active Granted
- 1988-05-10 DE DE3854211T patent/DE3854211T2/de not_active Expired - Fee Related
- 1988-05-10 EP EP88107497A patent/EP0293643B1/en not_active Expired - Lifetime
- 1988-05-26 CA CA000567723A patent/CA1285664C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0151825B2 (https=) | 1989-11-06 |
| EP0293643B1 (en) | 1995-07-26 |
| US4902899A (en) | 1990-02-20 |
| JPS63304257A (ja) | 1988-12-12 |
| EP0293643A3 (en) | 1990-10-31 |
| DE3854211D1 (de) | 1995-08-31 |
| DE3854211T2 (de) | 1996-02-29 |
| EP0293643A2 (en) | 1988-12-07 |
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