JPS63304257A - リソグラフイ方法 - Google Patents

リソグラフイ方法

Info

Publication number
JPS63304257A
JPS63304257A JP63095824A JP9582488A JPS63304257A JP S63304257 A JPS63304257 A JP S63304257A JP 63095824 A JP63095824 A JP 63095824A JP 9582488 A JP9582488 A JP 9582488A JP S63304257 A JPS63304257 A JP S63304257A
Authority
JP
Japan
Prior art keywords
mask
halftone
resolution
image
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63095824A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0151825B2 (https=
Inventor
バーン・ジエング・リン
アン・マリイ・モルズイ
アレン・エドワード・ローゼンブラツシユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS63304257A publication Critical patent/JPS63304257A/ja
Publication of JPH0151825B2 publication Critical patent/JPH0151825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP63095824A 1987-06-01 1988-04-20 リソグラフイ方法 Granted JPS63304257A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/056,161 US4902899A (en) 1987-06-01 1987-06-01 Lithographic process having improved image quality
US56161 1987-06-01

Publications (2)

Publication Number Publication Date
JPS63304257A true JPS63304257A (ja) 1988-12-12
JPH0151825B2 JPH0151825B2 (https=) 1989-11-06

Family

ID=22002573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63095824A Granted JPS63304257A (ja) 1987-06-01 1988-04-20 リソグラフイ方法

Country Status (5)

Country Link
US (1) US4902899A (https=)
EP (1) EP0293643B1 (https=)
JP (1) JPS63304257A (https=)
CA (1) CA1285664C (https=)
DE (1) DE3854211T2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH045656A (ja) * 1990-04-24 1992-01-09 Mitsubishi Electric Corp フォトマスク
US6632574B1 (en) 1998-07-06 2003-10-14 Canon Kabushiki Kaisha Mask having pattern areas whose transmission factors are different from each other
US6737198B2 (en) 1999-01-13 2004-05-18 Renesas Technology Corp. Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
JP2007010845A (ja) * 2005-06-29 2007-01-18 Toppan Printing Co Ltd 画素形成方法及びカラーフィルタ

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710967B2 (ja) 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
NL8903108A (nl) * 1989-12-20 1991-07-16 Philips Nv Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze.
SE465899B (sv) * 1990-01-29 1991-11-11 Misomex Ab Utbraenningsram foer kopiering av en genomlyslig originalfilm
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JP2892765B2 (ja) * 1990-04-27 1999-05-17 株式会社日立製作所 パターン構造を有する素子の製造方法
US5328807A (en) * 1990-06-11 1994-07-12 Hitichi, Ltd. Method of forming a pattern
JP3245882B2 (ja) * 1990-10-24 2002-01-15 株式会社日立製作所 パターン形成方法、および投影露光装置
JPH04242734A (ja) * 1990-12-28 1992-08-31 Dainippon Screen Mfg Co Ltd 製版カメラの露光制御方法及び露光制御装置
EP0500456B1 (en) * 1991-02-19 1998-05-06 Fujitsu Limited Projection exposure method and an optical mask for use in projection exposure
US5305054A (en) 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
US6128068A (en) * 1991-02-22 2000-10-03 Canon Kabushiki Kaisha Projection exposure apparatus including an illumination optical system that forms a secondary light source with a particular intensity distribution
US5208124A (en) * 1991-03-19 1993-05-04 Hewlett-Packard Company Method of making a mask for proximity effect correction in projection lithography
US5217830A (en) * 1991-03-26 1993-06-08 Micron Technology, Inc. Method of fabricating phase shifting reticles using ion implantation
US5194344A (en) * 1991-03-26 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles including chemically mechanically planarizing
US5194346A (en) * 1991-04-15 1993-03-16 Micron Technology, Inc. Method of fabricating phase shifting reticles with an accurate phase shift layer
US5194345A (en) * 1991-05-14 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles
US5240796A (en) * 1991-07-09 1993-08-31 Micron Technology, Inc. Method of fabricating a chromeless phase shift reticle
JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
US5246800A (en) * 1991-09-12 1993-09-21 Etec Systems, Inc. Discrete phase shift mask writing
US5328785A (en) * 1992-02-10 1994-07-12 Litel Instruments High power phase masks for imaging systems
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
JP3278896B2 (ja) * 1992-03-31 2002-04-30 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
US5547787A (en) * 1992-04-22 1996-08-20 Kabushiki Kaisha Toshiba Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask
JP2667940B2 (ja) * 1992-04-27 1997-10-27 三菱電機株式会社 マスク検査方法およびマスク検出装置
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
JPH06188270A (ja) * 1992-12-15 1994-07-08 Mitsubishi Electric Corp 電界効果トランジスタの製造方法及びパターン転写マスク
WO1994017449A1 (en) * 1993-01-21 1994-08-04 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
KR0135729B1 (en) * 1993-02-12 1998-04-24 Mitsubishi Electric Corp Attenuating type phase shifting mask and method of manufacturing thereof
US5593801A (en) * 1993-02-12 1997-01-14 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask
US5362584A (en) * 1993-04-02 1994-11-08 International Business Machines Corporation Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
JP2718893B2 (ja) * 1993-06-04 1998-02-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 移相マスクの移相欠陥を修復する方法
KR970007822B1 (ko) * 1993-11-15 1997-05-17 현대전자산업 주식회사 반도체 장치의 제조 방법
US6159641A (en) * 1993-12-16 2000-12-12 International Business Machines Corporation Method for the repair of defects in lithographic masks
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
KR0138297B1 (ko) * 1994-02-07 1998-06-01 김광호 포토 마스크 및 그 제조 방법
US5539175A (en) * 1994-03-21 1996-07-23 Litel Instruments Apparatus and process for optically ablated openings having designed profile
US5465859A (en) * 1994-04-28 1995-11-14 International Business Machines Corporation Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique
US5537648A (en) * 1994-08-15 1996-07-16 International Business Machines Corporation Geometric autogeneration of "hard" phase-shift designs for VLSI
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
US5477058A (en) * 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
US5565286A (en) * 1994-11-17 1996-10-15 International Business Machines Corporation Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor
KR0158904B1 (ko) * 1994-12-02 1999-02-01 김주용 콘택마스크
US5508803A (en) * 1994-12-20 1996-04-16 International Business Machines Corporation Method and apparatus for monitoring lithographic exposure
US5679483A (en) * 1994-12-20 1997-10-21 Siemens Aktiengesellschaft Embedded phase shifting photomasks and method for manufacturing same
KR100190762B1 (ko) * 1995-03-24 1999-06-01 김영환 사입사용 노광마스크
JPH09167753A (ja) * 1995-08-14 1997-06-24 Toshiba Corp 半導体基板の表面の平坦化方法とその装置
US5866913A (en) * 1995-12-19 1999-02-02 International Business Machines Corporation Proximity correction dose modulation for E-beam projection lithography
US5869212A (en) * 1996-05-31 1999-02-09 Kabushiki Kaisha Toshiba Integrated circuit photofabrication masks and methods for making same
US5747817A (en) * 1996-09-09 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. One-step method for on-line lithographic pattern inspection
US5821013A (en) * 1996-12-13 1998-10-13 Symbios, Inc. Variable step height control of lithographic patterning through transmitted light intensity variation
US6440644B1 (en) 1997-10-15 2002-08-27 Kabushiki Kaisha Toshiba Planarization method and system using variable exposure
US6534242B2 (en) 1997-11-06 2003-03-18 Canon Kabushiki Kaisha Multiple exposure device formation
US6377337B1 (en) 1998-05-02 2002-04-23 Canon Kabushiki Kaisha Projection exposure apparatus
US6218089B1 (en) 1998-05-22 2001-04-17 Micron Technology, Inc. Photolithographic method
JP3352405B2 (ja) 1998-09-10 2002-12-03 キヤノン株式会社 露光方法及びそれを用いたデバイス製造方法並びに半導体デバイス
US6373975B1 (en) 1999-01-25 2002-04-16 International Business Machines Corporation Error checking of simulated printed images with process window effects included
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6425112B1 (en) 1999-06-17 2002-07-23 International Business Machines Corporation Auto correction of error checked simulated printed images
US6258490B1 (en) 1999-07-09 2001-07-10 International Business Machines Corporation Transmission control mask utilized to reduce foreshortening effects
US6704695B1 (en) 1999-07-16 2004-03-09 International Business Machines Corporation Interactive optical proximity correction design method
US6569574B2 (en) * 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US6090528A (en) * 1999-10-27 2000-07-18 Gordon; Michael S. Spot-to-spot stitching in electron beam lithography utilizing square aperture with serrated edge
US6584609B1 (en) 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
US6303253B1 (en) 2000-03-16 2001-10-16 International Business Machines Corporation Hierarchy and domain-balancing method and algorithm for serif mask design in microlithography
EP1150171A3 (en) * 2000-04-28 2003-08-27 Infineon Technologies North America Corp. Group connection of reticle sub-shapes to reduce line shortening and improve pattern fidelity
TW512424B (en) 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
US6404970B1 (en) * 2000-05-22 2002-06-11 Jds Uniphase Inc. Variable optical attenuator
KR100494683B1 (ko) * 2000-05-31 2005-06-13 비오이 하이디스 테크놀로지 주식회사 4-마스크를 이용한 박막 트랜지스터 액정표시장치의제조시에 사용하는 할프톤 노광 공정용 포토 마스크
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US6523162B1 (en) 2000-08-02 2003-02-18 Numerical Technologies, Inc. General purpose shape-based layout processing scheme for IC layout modifications
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6453457B1 (en) 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6792590B1 (en) 2000-09-29 2004-09-14 Numerical Technologies, Inc. Dissection of edges with projection points in a fabrication layout for correcting proximity effects
US6665856B1 (en) * 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6881523B2 (en) 2001-03-14 2005-04-19 Asml Masktools B.V. Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
US6551750B2 (en) 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US6516452B2 (en) * 2001-05-01 2003-02-04 Chipdata, Inc. Method and apparatus for verifying design data
US6789237B1 (en) * 2001-05-11 2004-09-07 Northwestern University Efficient model order reduction via multi-point moment matching
CN1216285C (zh) * 2001-08-10 2005-08-24 Hoya株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
JP2003173015A (ja) * 2001-09-28 2003-06-20 Hoya Corp グレートーンマスクの製造方法
US6670082B2 (en) 2001-10-09 2003-12-30 Numerical Technologies, Inc. System and method for correcting 3D effects in an alternating phase-shifting mask
US6649452B2 (en) 2002-02-28 2003-11-18 Motorola, Inc. Method for manufacturing a lithographic reticle for transferring an integrated circuit design to a semiconductor wafer
AU2002324868A1 (en) * 2002-03-04 2003-09-29 Massachusetts Institute Of Technology A method and system of lithography using masks having gray-tone features
US7651821B2 (en) * 2002-03-04 2010-01-26 Massachusetts Institute Of Technology Method and system of lithography using masks having gray-tone features
US6887629B2 (en) * 2002-08-21 2005-05-03 Micron Technology, Inc. Radiation-patterning tool
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US7480891B2 (en) * 2005-04-29 2009-01-20 Cadence Design Systems, Inc. Method and apparatus of model-based photomask synthesis
US7506300B2 (en) * 2005-04-29 2009-03-17 Cadence Design Systems, Inc. Apparatus and method for breaking up and merging polygons
US7919231B2 (en) * 2007-09-04 2011-04-05 Hitachi Global Storage Technologies Netherlands B.V. Photolithographic method and mask devices utilized for multiple exposures in the field of a feature
US20090311615A1 (en) * 2008-06-13 2009-12-17 Deming Tang Method of photolithographic patterning
US8283111B2 (en) * 2008-09-17 2012-10-09 Tokyo Electron Limited Method for creating gray-scale features for dual tone development processes
US9341961B2 (en) 2013-03-15 2016-05-17 Globalfoundries Singapore Pte. Ltd. Cross technology reticle (CTR) or multi-layer reticle (MLR) CDU, registration, and overlay techniques
IL234655B (en) * 2014-09-15 2018-10-31 Zeiss Carl Sms Ltd Apparatus and method for imparting direction-selective light attenuation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102939A (ja) * 1981-12-15 1983-06-18 Canon Inc マスクアライナ−用マスク及びマスクアライナ−
JPS61117544A (ja) * 1984-11-14 1986-06-04 Hitachi Ltd ホトマスク

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB557132A (en) * 1942-02-10 1943-11-05 Benjamin Liebowitz "drop-out" half-tone negatives and positives and processes of producing the same
DE1622341A1 (de) * 1968-01-18 1970-10-29 Siemens Ag Verfahren zum Herstellen von Kontaktbelichtungsmasken fuer Halbleiterzwecke
DD126361A1 (https=) * 1976-04-30 1977-07-13
US4278755A (en) * 1978-04-10 1981-07-14 Lumin, Inc. Halftone screen and method of using same
US4308326A (en) * 1979-03-28 1981-12-29 Wirth John L Halftone contact screen and photographic method of making the screen
US4231811A (en) * 1979-09-13 1980-11-04 Intel Corporation Variable thickness self-aligned photoresist process
JPS5689742A (en) * 1979-12-22 1981-07-21 Fujitsu Ltd Mask for exposure
US4262070A (en) * 1980-04-18 1981-04-14 Liu Hua Kuang Method of making halftone contact screens
US4456371A (en) * 1982-06-30 1984-06-26 International Business Machines Corporation Optical projection printing threshold leveling arrangement
US4417948A (en) * 1982-07-09 1983-11-29 International Business Machines Corporation Self developing, photoetching of polyesters by far UV radiation
US4600666A (en) * 1983-01-12 1986-07-15 Zink Edmund S Integrated photoscreen for making a halftone reproduction printing plate from a photograph
JPS59202632A (ja) * 1983-04-30 1984-11-16 Fuji Electric Corp Res & Dev Ltd フオトマスク
GB8519910D0 (en) * 1985-08-08 1985-09-18 Secr Defence Photolithographic masks

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102939A (ja) * 1981-12-15 1983-06-18 Canon Inc マスクアライナ−用マスク及びマスクアライナ−
JPS61117544A (ja) * 1984-11-14 1986-06-04 Hitachi Ltd ホトマスク

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH045656A (ja) * 1990-04-24 1992-01-09 Mitsubishi Electric Corp フォトマスク
US6632574B1 (en) 1998-07-06 2003-10-14 Canon Kabushiki Kaisha Mask having pattern areas whose transmission factors are different from each other
US6816233B2 (en) 1998-07-06 2004-11-09 Canon Kabushiki Kaisha Mask having pattern areas whose transmission factors are different from each other
US6737198B2 (en) 1999-01-13 2004-05-18 Renesas Technology Corp. Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
JP2007010845A (ja) * 2005-06-29 2007-01-18 Toppan Printing Co Ltd 画素形成方法及びカラーフィルタ

Also Published As

Publication number Publication date
JPH0151825B2 (https=) 1989-11-06
EP0293643B1 (en) 1995-07-26
US4902899A (en) 1990-02-20
EP0293643A3 (en) 1990-10-31
CA1285664C (en) 1991-07-02
DE3854211D1 (de) 1995-08-31
DE3854211T2 (de) 1996-02-29
EP0293643A2 (en) 1988-12-07

Similar Documents

Publication Publication Date Title
JPS63304257A (ja) リソグラフイ方法
US6335130B1 (en) System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
JP4749332B2 (ja) 拡大された焦点深度を有するリソグラフィックシステムおよび方法
US5827623A (en) Optical proximity correction halftone type phase shift photomask
US6818389B2 (en) Method of design and fabrication of integrated circuits using regular arrays and gratings
Levenson Wavefront engineering for photolithography
US7467072B2 (en) Simulation of objects in imaging using edge domain decomposition
US7160649B2 (en) Gray level imaging masks, optical imaging apparatus for gray level imaging masks and methods for encoding mask and use of the masks
KR100367185B1 (ko) 암시야 조사를 사용한 디바이스 제조를 위한 리소그래픽 프로세스 및 장치
KR100579637B1 (ko) 위상경계마스킹을 사용하여 수정된 조명으로 이미징하는 방법
JP5048801B2 (ja) 光学および干渉リソグラフィを統合して複雑なパターンを生成する方法および装置
Henke et al. Simulation and experimental study of gray-tone lithography for the fabrication of arbitrarily shaped surfaces
US5764342A (en) Method and system for controlling the relative size of images formed in light-sensitive media
US5650632A (en) Focal plane phase-shifting lithography
US5789117A (en) Transfer method for non-critical photoresist patterns
US7160651B2 (en) Manufacturable chromeless alternating phase shift mask structure with phase grating
US6180293B1 (en) Mask pattern preparing method and photomask
JP3644041B2 (ja) 露光方法及び露光装置
Chen et al. Experimental comparison of off-axis illumination and imaging interferometric lithography
Kamon et al. Photolithography system using a combination of modified illumination and phase shift mask
JP2001358073A (ja) パターン形成方法
Sandstrom et al. RET for optical maskless lithography
US6844118B2 (en) Method and layout for high density reticle
JPH0844039A (ja) ハーフトーン方式位相シフトマスク及びレジスト露光方法
van Resandt et al. Super resolution lithography using a direct-write laser pattern generator