CA1278883C - Process for making self-aligning thin film transistors - Google Patents
Process for making self-aligning thin film transistorsInfo
- Publication number
- CA1278883C CA1278883C CA000579011A CA579011A CA1278883C CA 1278883 C CA1278883 C CA 1278883C CA 000579011 A CA000579011 A CA 000579011A CA 579011 A CA579011 A CA 579011A CA 1278883 C CA1278883 C CA 1278883C
- Authority
- CA
- Canada
- Prior art keywords
- photoresist
- transparent
- areas
- stack
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000003989 dielectric material Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 239000011149 active material Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- -1 poly(p-hydroxystyrene) Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- NSQOMIFJKCLCNL-UHFFFAOYSA-N 3-(2-azidophenyl)-1-phenylprop-2-en-1-one Chemical class [N-]=[N+]=NC1=CC=CC=C1C=CC(=O)C1=CC=CC=C1 NSQOMIFJKCLCNL-UHFFFAOYSA-N 0.000 description 1
- NDMUQNOYNAWAAL-UHFFFAOYSA-N 3-diazo-1,4-dioxonaphthalene-2-sulfonic acid Chemical class C1=CC=C2C(=O)C(=[N+]=[N-])C(S(=O)(=O)O)C(=O)C2=C1 NDMUQNOYNAWAAL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical class Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- KSYFKNPEFMYROF-UHFFFAOYSA-N N(=[N+]=[N-])C(C1=CC=CC=C1)=C1C(C(CCC1)=O)=C(C1=CC=CC=C1)N=[N+]=[N-] Chemical class N(=[N+]=[N-])C(C1=CC=CC=C1)=C1C(C(CCC1)=O)=C(C1=CC=CC=C1)N=[N+]=[N-] KSYFKNPEFMYROF-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/137—Resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Thin Film Transistor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/115,470 | 1987-10-30 | ||
| US07/115,470 US4767723A (en) | 1987-10-30 | 1987-10-30 | Process for making self-aligning thin film transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1278883C true CA1278883C (en) | 1991-01-08 |
Family
ID=22361617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000579011A Expired - Fee Related CA1278883C (en) | 1987-10-30 | 1988-09-30 | Process for making self-aligning thin film transistors |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4767723A (ja) |
| EP (1) | EP0314344B1 (ja) |
| JP (1) | JPH0691107B2 (ja) |
| CA (1) | CA1278883C (ja) |
| DE (1) | DE3886684T2 (ja) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4960719A (en) * | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
| GB8812235D0 (en) * | 1988-05-24 | 1988-06-29 | Jones B L | Manufacturing electronic devices |
| US5001083A (en) * | 1988-07-12 | 1991-03-19 | Microwave Modules & Devices Inc. | Method of priming semiconductor substrate for subsequent photoresist masking and etching |
| US4997746A (en) * | 1988-11-22 | 1991-03-05 | Greco Nancy A | Method of forming conductive lines and studs |
| US5157470A (en) * | 1989-02-27 | 1992-10-20 | Hitachi, Ltd. | Thin film transistor, manufacturing method thereof and matrix circuit board and image display device each using the same |
| JP2814155B2 (ja) * | 1990-08-13 | 1998-10-22 | キヤノン株式会社 | Ｉｔｏ膜パターンの形成方法および液晶表示素子用基板の製造方法 |
| US5156986A (en) * | 1990-10-05 | 1992-10-20 | General Electric Company | Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration |
| DE4192352T (ja) * | 1990-10-05 | 1992-10-08 | ||
| US5132745A (en) * | 1990-10-05 | 1992-07-21 | General Electric Company | Thin film transistor having an improved gate structure and gate coverage by the gate dielectric |
| KR940008227B1 (ko) * | 1991-08-27 | 1994-09-08 | 주식회사 금성사 | 박막 트랜지스터 제조방법 |
| US5432047A (en) * | 1992-06-12 | 1995-07-11 | International Business Machines Corporation | Patterning process for bipolar optical storage medium |
| JP2582996B2 (ja) * | 1992-06-12 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | フォトマスクの製造方法 |
| US5578403A (en) * | 1993-07-26 | 1996-11-26 | Shinto Paint Co., Ltd. | Method for manufacture of a substrate having window-shaped and frame-shaped coating films on the surface thereof |
| JPH0784119A (ja) * | 1993-09-17 | 1995-03-31 | Sumitomo Chem Co Ltd | 機能性塗膜等の形成方法 |
| US5494839A (en) * | 1994-05-03 | 1996-02-27 | United Microelectronics Corporation | Dual photo-resist process for fabricating high density DRAM |
| JP3208268B2 (ja) * | 1994-12-28 | 2001-09-10 | シャープ株式会社 | 反射型液晶表示装置 |
| US5612235A (en) * | 1995-11-01 | 1997-03-18 | Industrial Technology Research Institute | Method of making thin film transistor with light-absorbing layer |
| US5597747A (en) * | 1995-12-15 | 1997-01-28 | Industrial Technology Research Institute | Method of making inverted thin film transistor using backsick exposure and negative photoresist |
| US6038006A (en) * | 1996-09-02 | 2000-03-14 | Casio Computer Co., Ltd. | Liquid crystal display device with light shield and color filter overlapping two edges of pixel electrode |
| US5882977A (en) * | 1997-10-03 | 1999-03-16 | International Business Machines Corporation | Method of forming a self-aligned, sub-minimum isolation ring |
| DE19744098B4 (de) * | 1997-10-06 | 2004-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren für Flüssigkristallbildschirme |
| US6007968A (en) | 1997-10-29 | 1999-12-28 | International Business Machines Corporation | Method for forming features using frequency doubling hybrid resist and device formed thereby |
| US6096618A (en) * | 1998-01-20 | 2000-08-01 | International Business Machines Corporation | Method of making a Schottky diode with sub-minimum guard ring |
| US5994198A (en) * | 1998-02-23 | 1999-11-30 | International Business Machines Corporation | Fabrication method for fully landing subminimum features on minimum width lines |
| GB9919913D0 (en) * | 1999-08-24 | 1999-10-27 | Koninkl Philips Electronics Nv | Thin-film transistors and method for producing the same |
| KR20030002413A (ko) * | 2001-06-29 | 2003-01-09 | 한민구 | 액정 디스플레이 패널을 형성하기 위한 다결정 박막트랜지스터 제조방법 |
| KR100731750B1 (ko) | 2005-06-23 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 이를 이용한 유기전계발광표시장치의제조방법 |
| WO2011133680A2 (en) * | 2010-04-22 | 2011-10-27 | Board Of Regents The University Of Texas System | Novel dual-tone resist formulations and methods |
| KR101769612B1 (ko) * | 2010-12-10 | 2017-08-21 | 삼성디스플레이 주식회사 | 기판 평탄화 방법 |
| WO2013049367A2 (en) * | 2011-09-30 | 2013-04-04 | Rolith, Inc. | Plasmonic lithography using phase mask |
| WO2020014026A1 (en) * | 2018-07-09 | 2020-01-16 | Applied Materials, Inc. | Photoresist composition for line doubling |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3279239D1 (en) * | 1981-07-27 | 1988-12-29 | Toshiba Kk | Thin-film transistor and method of manufacture therefor |
| JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
| DE3337315A1 (de) * | 1982-10-13 | 1984-04-19 | Tokyo Ohka Kogyo Co., Ltd., Kawasaki, Kanagawa | Zweifach-lichtempfindliche zusammensetzungen und verfahren zur erzeugung bildmustergemaesser photoresistschichten |
| JPS60100173A (ja) * | 1983-11-07 | 1985-06-04 | セイコーインスツルメンツ株式会社 | 液晶表示装置の製造方法 |
-
1987
- 1987-10-30 US US07/115,470 patent/US4767723A/en not_active Expired - Lifetime
-
1988
- 1988-08-18 JP JP63203978A patent/JPH0691107B2/ja not_active Expired - Lifetime
- 1988-09-30 CA CA000579011A patent/CA1278883C/en not_active Expired - Fee Related
- 1988-10-13 DE DE3886684T patent/DE3886684T2/de not_active Expired - Fee Related
- 1988-10-13 EP EP88309576A patent/EP0314344B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3886684D1 (de) | 1994-02-10 |
| EP0314344B1 (en) | 1993-12-29 |
| DE3886684T2 (de) | 1994-06-23 |
| EP0314344A1 (en) | 1989-05-03 |
| JPH0691107B2 (ja) | 1994-11-14 |
| US4767723A (en) | 1988-08-30 |
| JPH0290629A (ja) | 1990-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |