CA1129550A - Memoire dynamique mos dans une structure semiconductrice a courants de diffusion limites - Google Patents

Memoire dynamique mos dans une structure semiconductrice a courants de diffusion limites

Info

Publication number
CA1129550A
CA1129550A CA314,979A CA314979A CA1129550A CA 1129550 A CA1129550 A CA 1129550A CA 314979 A CA314979 A CA 314979A CA 1129550 A CA1129550 A CA 1129550A
Authority
CA
Canada
Prior art keywords
epitaxial layer
layer
layered structure
type
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA314,979A
Other languages
English (en)
Inventor
James T. Clemens
Dinesh A. Mehta
James T. Nelson
Robert C. Sun
Charles W. Pearce
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1129550A publication Critical patent/CA1129550A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
CA314,979A 1977-11-03 1978-10-30 Memoire dynamique mos dans une structure semiconductrice a courants de diffusion limites Expired CA1129550A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84800077A 1977-11-03 1977-11-03
US848,000 1977-11-03

Publications (1)

Publication Number Publication Date
CA1129550A true CA1129550A (fr) 1982-08-10

Family

ID=25302070

Family Applications (1)

Application Number Title Priority Date Filing Date
CA314,979A Expired CA1129550A (fr) 1977-11-03 1978-10-30 Memoire dynamique mos dans une structure semiconductrice a courants de diffusion limites

Country Status (17)

Country Link
JP (2) JPS5474684A (fr)
BE (1) BE871678A (fr)
CA (1) CA1129550A (fr)
CH (1) CH636216A5 (fr)
DE (1) DE2846872B2 (fr)
FR (1) FR2408191A1 (fr)
GB (1) GB2007430B (fr)
HK (1) HK25484A (fr)
IL (1) IL55812A (fr)
IN (1) IN151278B (fr)
IT (1) IT1100012B (fr)
MY (1) MY8400042A (fr)
NL (1) NL191768C (fr)
PL (1) PL115612B1 (fr)
SE (1) SE438217B (fr)
SG (1) SG56282G (fr)
TR (1) TR20234A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
DE3069973D1 (en) * 1979-08-25 1985-02-28 Zaidan Hojin Handotai Kenkyu Insulated-gate field-effect transistor
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
DE3177173D1 (de) * 1980-01-25 1990-05-23 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung.
JPH0782753B2 (ja) * 1984-08-31 1995-09-06 三菱電機株式会社 ダイナミックメモリ装置
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544327A1 (de) * 1951-01-28 1970-02-26 Telefunken Patent Verfahren zum Herstellen einer dotierten Zone in einem begrenzten Bereich eines Halbleiterkoerpers
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (fr) * 1971-08-26 1976-07-16
JPS4931509U (fr) * 1972-06-17 1974-03-19
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
DE2603746A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher

Also Published As

Publication number Publication date
NL7810929A (nl) 1979-05-07
SG56282G (en) 1983-09-02
DE2846872C3 (fr) 1989-06-08
IT1100012B (it) 1985-09-28
FR2408191B1 (fr) 1982-11-19
BE871678A (fr) 1979-02-15
IL55812A0 (en) 1978-12-17
PL210682A1 (pl) 1979-07-16
SE438217B (sv) 1985-04-01
FR2408191A1 (fr) 1979-06-01
IT7829360A0 (it) 1978-11-02
HK25484A (en) 1984-03-30
GB2007430A (en) 1979-05-16
NL191768B (nl) 1996-03-01
DE2846872B2 (de) 1981-04-30
MY8400042A (en) 1984-12-31
JPH019174Y2 (fr) 1989-03-13
JPS59115667U (ja) 1984-08-04
PL115612B1 (en) 1981-04-30
GB2007430B (en) 1982-03-03
JPS5474684A (en) 1979-06-14
IL55812A (en) 1981-10-30
DE2846872A1 (de) 1979-05-10
TR20234A (tr) 1980-11-01
NL191768C (nl) 1996-07-02
CH636216A5 (de) 1983-05-13
SE7811094L (sv) 1979-05-04
IN151278B (fr) 1983-03-19

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