CA1092410A - Polymeric resist mask composition - Google Patents

Polymeric resist mask composition

Info

Publication number
CA1092410A
CA1092410A CA270,235A CA270235A CA1092410A CA 1092410 A CA1092410 A CA 1092410A CA 270235 A CA270235 A CA 270235A CA 1092410 A CA1092410 A CA 1092410A
Authority
CA
Canada
Prior art keywords
resist mask
fluorine
rays
composition
ester
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA270,235A
Other languages
English (en)
French (fr)
Inventor
Kentaro Matsuyama
Masami Kakuchi
Shungo Sugawara
Kei Murase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of CA1092410A publication Critical patent/CA1092410A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CA270,235A 1976-01-23 1977-01-21 Polymeric resist mask composition Expired CA1092410A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP582776A JPS5290269A (en) 1976-01-23 1976-01-23 Forming method for fine resist patterns
JP5827/76 1976-01-23

Publications (1)

Publication Number Publication Date
CA1092410A true CA1092410A (en) 1980-12-30

Family

ID=11621877

Family Applications (1)

Application Number Title Priority Date Filing Date
CA270,235A Expired CA1092410A (en) 1976-01-23 1977-01-21 Polymeric resist mask composition

Country Status (7)

Country Link
US (1) US4125672A (OSRAM)
JP (1) JPS5290269A (OSRAM)
CA (1) CA1092410A (OSRAM)
DE (1) DE2702427C3 (OSRAM)
FR (1) FR2339184A1 (OSRAM)
GB (1) GB1511992A (OSRAM)
NL (1) NL7700552A (OSRAM)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149116A (en) * 1976-06-07 1977-12-12 Tokyo Ouka Kougiyou Kk Method of forming xxray image
JPS53100774A (en) * 1977-02-15 1978-09-02 Nippon Telegr & Teleph Corp <Ntt> Resist composition for short eavelength ultraviolet light
GB1602724A (en) * 1977-04-26 1981-11-18 Standard Telephones Cables Ltd Resist material for x-ray lithography
JPS5484978A (en) * 1977-12-20 1979-07-06 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
JPS54115128A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Positive resist sensitive to electromagnetic radiation
JPS54145127A (en) * 1978-05-04 1979-11-13 Nippon Telegr & Teleph Corp <Ntt> Pattern formation material
JPS5828571B2 (ja) * 1978-07-20 1983-06-16 沖電気工業株式会社 微細加工用レジスト形成方法
JPS5517112A (en) * 1978-07-21 1980-02-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Positive type radiation sensitive composition
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
US4225664A (en) * 1979-02-22 1980-09-30 Bell Telephone Laboratories, Incorporated X-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate)
DE3060510D1 (en) * 1979-03-09 1982-07-29 Thomson Csf Photomasking substances, process for preparing them and mask obtained
FR2451050A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
FR2461967A2 (fr) * 1979-07-17 1981-02-06 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
JPS56139515A (en) * 1980-03-31 1981-10-31 Daikin Ind Ltd Polyfluoroalkyl acrylate copolymer
JPS56167139A (en) 1980-05-27 1981-12-22 Daikin Ind Ltd Sensitive material
JPS5860536A (ja) * 1981-10-06 1983-04-11 Toshiba Corp レジスト像形成方法
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPS584137A (ja) * 1981-06-30 1983-01-11 Daikin Ind Ltd レジストおよび微細レジストパタ−ンの形成方法
CA1207099A (en) * 1981-12-19 1986-07-02 Tsuneo Fujii Resist material and process for forming fine resist pattern
DE3246825A1 (de) * 1982-02-24 1983-09-01 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Positives resistmaterial
JPS59180546A (ja) * 1983-03-30 1984-10-13 Daikin Ind Ltd レジスト被膜の現像方法
JPS6170719A (ja) * 1984-09-14 1986-04-11 Matsushita Electronics Corp パタ−ン形成方法
US5378502A (en) * 1992-09-09 1995-01-03 U.S. Philips Corporation Method of chemically modifying a surface in accordance with a pattern
DE69428821T2 (de) * 1993-03-25 2002-04-11 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske
WO2002102758A1 (en) * 2001-06-18 2002-12-27 Honeywell International, Inc. Fluorine-containing compounds and polymers derived therefrom
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
EP1983038A1 (en) * 2007-04-18 2008-10-22 Turboden S.r.l. Turbo generator (orc) for applications at middle-low temperatures, using a fluid with azeotropic behaviour
CN107108455A (zh) * 2014-12-19 2017-08-29 默克专利股份有限公司 含氟化合物
JP6900951B2 (ja) * 2016-03-31 2021-07-14 日産化学株式会社 硬化膜形成組成物
KR102387852B1 (ko) 2016-03-31 2022-04-15 닛산 가가쿠 가부시키가이샤 경화막 형성 조성물

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3632400A (en) * 1969-06-30 1972-01-04 Ford Motor Co Surface modified elastomers
US3743842A (en) * 1972-01-14 1973-07-03 Massachusetts Inst Technology Soft x-ray lithographic apparatus and process
JPS5342260B2 (OSRAM) * 1973-11-22 1978-11-10
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same

Also Published As

Publication number Publication date
GB1511992A (en) 1978-05-24
FR2339184B1 (OSRAM) 1980-12-26
DE2702427A1 (de) 1977-08-04
FR2339184A1 (fr) 1977-08-19
DE2702427C3 (de) 1979-10-18
DE2702427B2 (de) 1979-02-15
JPS5524088B2 (OSRAM) 1980-06-26
JPS5290269A (en) 1977-07-29
NL7700552A (nl) 1977-07-26
US4125672A (en) 1978-11-14

Similar Documents

Publication Publication Date Title
CA1092410A (en) Polymeric resist mask composition
US5173393A (en) Etch-resistant deep ultraviolet resist process having an aromatic treating step after development
DE60034488T2 (de) Strahlungsempfindliche copolymere, fotoresistzusammensetzungen und zweischichtresistsysteme für den tiefen uv-bereich
CN1097601C (zh) 制备具有很低金属离子含量的光刻胶组合物的方法
JP7327387B2 (ja) Ｅｕｖリソグラフィ用ポジ型レジスト組成物およびレジストパターン形成方法
US5164286A (en) Photoresist developer containing fluorinated amphoteric surfactant
US7838201B2 (en) Method for manufacturing a semiconductor device
JP7310275B2 (ja) レジストパターン形成方法
EP0585980B1 (en) Lithographic process for fabricating a device
KR102324679B1 (ko) 금속 산화물을 함유하는 재료, 이것의 제조 방법 및 이것의 사용 방법
KR100477401B1 (ko) 이온 교환에 의해 유기 극성 용제를 함유하는 포토레지스트 조성물내의 금속 이온 오염물을 감소시키는 방법
JPS5949536A (ja) 微細パタ−ン形成方法
JP7172495B2 (ja) 重合体及びポジ型レジスト組成物
JP6935669B2 (ja) レジストパターン形成方法
US5830990A (en) Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
KR20230029619A (ko) 공중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법
JPS59198446A (ja) 感光性樹脂組成物及びその使用方法
JP7121943B2 (ja) レジストパターン形成方法
JPS6361651B2 (OSRAM)
JP2021067811A (ja) レジストパターン形成方法
JP7131292B2 (ja) レジストパターン形成方法
JPS58105142A (ja) 遠紫外線感応性レジスト材料及びその使用方法
JPH0381143B2 (OSRAM)
JPH0544019B2 (OSRAM)
JP3563138B2 (ja) 感光性樹脂組成物を用いたパターン形成方法

Legal Events

Date Code Title Description
MKEX Expiry