CA1050667A - Method of manufacturing semiconductor devices - Google Patents

Method of manufacturing semiconductor devices

Info

Publication number
CA1050667A
CA1050667A CA251,494A CA251494A CA1050667A CA 1050667 A CA1050667 A CA 1050667A CA 251494 A CA251494 A CA 251494A CA 1050667 A CA1050667 A CA 1050667A
Authority
CA
Canada
Prior art keywords
layer
electrode
base
polycrystal
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA251,494A
Other languages
English (en)
French (fr)
Inventor
Katsuyuki Inayoshi
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of CA1050667A publication Critical patent/CA1050667A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P14/60—
    • H10P32/1414—
    • H10P32/171—
    • H10P95/00—
    • H10W20/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/123—Polycrystalline diffuse anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/138—Roughened surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cold Cathode And The Manufacture (AREA)
CA251,494A 1975-04-30 1976-04-29 Method of manufacturing semiconductor devices Expired CA1050667A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50051521A JPS51127682A (en) 1975-04-30 1975-04-30 Manufacturing process of semiconductor device

Publications (1)

Publication Number Publication Date
CA1050667A true CA1050667A (en) 1979-03-13

Family

ID=12889304

Family Applications (1)

Application Number Title Priority Date Filing Date
CA251,494A Expired CA1050667A (en) 1975-04-30 1976-04-29 Method of manufacturing semiconductor devices

Country Status (6)

Country Link
US (1) US4125426A (enExample)
JP (1) JPS51127682A (enExample)
CA (1) CA1050667A (enExample)
DE (1) DE2618445C2 (enExample)
GB (1) GB1506066A (enExample)
NL (1) NL186478C (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
CA1129118A (en) * 1978-07-19 1982-08-03 Tetsushi Sakai Semiconductor devices and method of manufacturing the same
US4230522A (en) * 1978-12-26 1980-10-28 Rockwell International Corporation PNAF Etchant for aluminum and silicon
JPS55102266A (en) * 1979-01-31 1980-08-05 Fujitsu Ltd Fabricating method of semiconductor device
JPS6043656B2 (ja) * 1979-06-06 1985-09-30 株式会社東芝 半導体装置の製造方法
US4452645A (en) * 1979-11-13 1984-06-05 International Business Machines Corporation Method of making emitter regions by implantation through a non-monocrystalline layer
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4411708A (en) * 1980-08-25 1983-10-25 Trw Inc. Method of making precision doped polysilicon vertical ballast resistors by multiple implantations
JPS5775453A (en) * 1980-10-29 1982-05-12 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS57132357A (en) * 1981-02-10 1982-08-16 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS5860569A (ja) * 1981-10-06 1983-04-11 Fujitsu Ltd 半導体装置の製造方法
US4437897A (en) 1982-05-18 1984-03-20 International Business Machines Corporation Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
US4516145A (en) * 1983-08-31 1985-05-07 Storage Technology Partners Reduction of contact resistance in CMOS integrated circuit chips and the product thereof
JPS60126869A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4665424A (en) * 1984-03-30 1987-05-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH0611053B2 (ja) * 1984-12-20 1994-02-09 三菱電機株式会社 半導体装置の製造方法
EP0193934B1 (en) * 1985-03-07 1993-07-21 Kabushiki Kaisha Toshiba Semiconductor integreated circuit device and method of manufacturing the same
US5280188A (en) * 1985-03-07 1994-01-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors
US4717678A (en) * 1986-03-07 1988-01-05 International Business Machines Corporation Method of forming self-aligned P contact
KR890005885A (ko) * 1987-09-26 1989-05-17 강진구 바이폴라 트랜지스터의 제조방법
US5204276A (en) * 1988-12-06 1993-04-20 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH0817180B2 (ja) * 1989-06-27 1996-02-21 株式会社東芝 半導体装置の製造方法
JPH05102175A (ja) * 1991-10-07 1993-04-23 Sharp Corp 半導体装置の製造方法
JP2001332561A (ja) * 2000-05-22 2001-11-30 Nec Corp バイポーラトランジスタおよびその製造方法
DE10229081B4 (de) * 2002-06-28 2007-07-19 Contitech Luftfedersysteme Gmbh Verfahren zum Trennen von Schläuchen und Vorrichtung zur Durchführung des Verfahrens
DE102007043614B3 (de) 2007-09-13 2008-11-20 Biocrates Life Sciences Gmbh Halterung für ein Trägermittel zum Einsetzen in eine zylinderförmige Öffnung
CN113053736B (zh) * 2021-03-11 2024-05-03 捷捷半导体有限公司 一种半导体器件制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3764409A (en) * 1969-09-29 1973-10-09 Hitachi Ltd Method for fabricating a semiconductor component for a semiconductor circuit
US3759762A (en) * 1970-10-19 1973-09-18 Motorola Inc Method of forming integrated circuits utilizing low resistance valueslow temperature deposited oxides and shallow junctions
US3719535A (en) * 1970-12-21 1973-03-06 Motorola Inc Hyperfine geometry devices and method for their fabrication
JPS5538823B2 (enExample) * 1971-12-22 1980-10-07
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
JPS5317393B2 (enExample) * 1973-01-16 1978-06-08
US3928081A (en) * 1973-10-26 1975-12-23 Signetics Corp Method for fabricating semiconductor devices using composite mask and ion implantation

Also Published As

Publication number Publication date
NL186478C (nl) 1990-12-03
US4125426A (en) 1978-11-14
GB1506066A (en) 1978-04-05
DE2618445A1 (de) 1976-11-18
NL7604632A (nl) 1976-11-02
JPS51127682A (en) 1976-11-06
JPS5524703B2 (enExample) 1980-07-01
DE2618445C2 (de) 1986-10-16
NL186478B (nl) 1990-07-02

Similar Documents

Publication Publication Date Title
CA1050667A (en) Method of manufacturing semiconductor devices
JP2670563B2 (ja) 半導体装置の製造方法
US4299024A (en) Fabrication of complementary bipolar transistors and CMOS devices with poly gates
CA1120609A (en) Method for forming a narrow dimensioned mask opening on a silicon body
CA1082373A (en) Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps
US4016007A (en) Method for fabricating a silicon device utilizing ion-implantation and selective oxidation
EP0033495B1 (en) Process for fabricating a high speed bipolar transistor
EP0076105A2 (en) Method of producing a bipolar transistor
EP0076106B1 (en) Method for producing a bipolar transistor
US4351677A (en) Method of manufacturing semiconductor device having aluminum diffused semiconductor substrate
EP0107437B1 (en) Method of producing a semiconductor device comprising a bipolar transistor and a schottky barrier diode
JPS6133253B2 (enExample)
JP3388590B2 (ja) ダイオード又はショットキークランプトランジスタを製造する方法
EP0219243A2 (en) Process of manufacturing a bipolar transistor
CA1192668A (en) Semiconductor device and its fabrication method
JPH0243336B2 (enExample)
US4653173A (en) Method of manufacturing an insulated gate field effect device
JPH0756870B2 (ja) 半導体装置の製造方法
JPH0126186B2 (enExample)
JPH0330293B2 (enExample)
JPH049371B2 (enExample)
US4012763A (en) Semiconductor device having insulator film with different prescribed thickness portions
JPS6188543A (ja) 半導体装置の製造方法
JP3038961B2 (ja) 半導体装置の製造方法
JPS5968950A (ja) 半導体装置の製造方法