JPH0126186B2 - - Google Patents

Info

Publication number
JPH0126186B2
JPH0126186B2 JP56135155A JP13515581A JPH0126186B2 JP H0126186 B2 JPH0126186 B2 JP H0126186B2 JP 56135155 A JP56135155 A JP 56135155A JP 13515581 A JP13515581 A JP 13515581A JP H0126186 B2 JPH0126186 B2 JP H0126186B2
Authority
JP
Japan
Prior art keywords
layer
base
emitter
electrode
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56135155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5835971A (ja
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56135155A priority Critical patent/JPS5835971A/ja
Publication of JPS5835971A publication Critical patent/JPS5835971A/ja
Publication of JPH0126186B2 publication Critical patent/JPH0126186B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56135155A 1981-08-28 1981-08-28 半導体装置の製造方法 Granted JPS5835971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56135155A JPS5835971A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56135155A JPS5835971A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5835971A JPS5835971A (ja) 1983-03-02
JPH0126186B2 true JPH0126186B2 (enExample) 1989-05-22

Family

ID=15145095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56135155A Granted JPS5835971A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5835971A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076166A (ja) * 1983-10-03 1985-04-30 Rohm Co Ltd 半導体装置およびその製造方法
JPS60160164A (ja) * 1983-10-15 1985-08-21 Rohm Co Ltd 半導体装置およびその製造方法
JPS61117870A (ja) * 1984-11-14 1986-06-05 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035818B2 (ja) * 1976-09-22 1985-08-16 日本電気株式会社 半導体装置の製造方法
JPS5942987B2 (ja) * 1978-09-26 1984-10-18 沖電気工業株式会社 半導体装置の製造方法
DE2946963A1 (de) * 1979-11-21 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Schnelle bipolare transistoren

Also Published As

Publication number Publication date
JPS5835971A (ja) 1983-03-02

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