CA1031470A - Radiation mask for producing structural configurations in photo-sensitive resists by x-ray exposure - Google Patents

Radiation mask for producing structural configurations in photo-sensitive resists by x-ray exposure

Info

Publication number
CA1031470A
CA1031470A CA209,301A CA209301A CA1031470A CA 1031470 A CA1031470 A CA 1031470A CA 209301 A CA209301 A CA 209301A CA 1031470 A CA1031470 A CA 1031470A
Authority
CA
Canada
Prior art keywords
photo
ray exposure
structural configurations
radiation mask
producing structural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA209,301A
Other languages
English (en)
French (fr)
Inventor
Dietrich Widmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1031470A publication Critical patent/CA1031470A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31623—Next to polyamide or polyimide

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
CA209,301A 1973-09-17 1974-09-16 Radiation mask for producing structural configurations in photo-sensitive resists by x-ray exposure Expired CA1031470A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2346719A DE2346719C3 (de) 1973-09-17 1973-09-17 Mehrschichtige Bestrahlungsmaske für die Röntgenstrahl-Fotolithografie

Publications (1)

Publication Number Publication Date
CA1031470A true CA1031470A (en) 1978-05-16

Family

ID=5892798

Family Applications (1)

Application Number Title Priority Date Filing Date
CA209,301A Expired CA1031470A (en) 1973-09-17 1974-09-16 Radiation mask for producing structural configurations in photo-sensitive resists by x-ray exposure

Country Status (15)

Country Link
US (1) US4268563A (de)
JP (1) JPS5740649B2 (de)
AT (1) ATA731774A (de)
BE (1) BE820007A (de)
CA (1) CA1031470A (de)
CH (1) CH594986A5 (de)
DE (1) DE2346719C3 (de)
DK (1) DK483974A (de)
FR (1) FR2244196B1 (de)
GB (1) GB1474285A (de)
IE (1) IE39829B1 (de)
IT (1) IT1021304B (de)
LU (1) LU70924A1 (de)
NL (1) NL7412036A (de)
SE (1) SE7411633L (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136577A (en) * 1976-05-11 1977-11-15 Nippon Chemical Ind Aligning device
JPS5399771A (en) * 1977-02-10 1978-08-31 Hitachi Ltd Soft x-ray transfer mask
JPS53134367A (en) * 1977-04-28 1978-11-22 Toppan Printing Co Ltd Xxray mask
JPS5411677A (en) * 1977-06-27 1979-01-27 Rockwell International Corp Mask used for fine line lithography and method of producing same
JPS62155518A (ja) * 1977-12-23 1987-07-10 Dainippon Printing Co Ltd 軟ｘ線リソグラフイ−用マスク
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4253029A (en) * 1979-05-23 1981-02-24 Bell Telephone Laboratories, Incorporated Mask structure for x-ray lithography
JPS5676531A (en) * 1979-11-28 1981-06-24 Fujitsu Ltd Manufacture of semiconductor device
JPS5688137A (en) * 1979-12-21 1981-07-17 Fujitsu Ltd X-ray transfer mask
US4447527A (en) * 1980-09-02 1984-05-08 Syva Company Single test formulations for enzyme immunoassays and method for preparation
JPS5767927A (en) * 1980-10-15 1982-04-24 Nec Corp X-ray exposure device
JPS58207635A (ja) * 1982-05-28 1983-12-03 Seiko Epson Corp メンブラン・マスクの製造方法
JPS5931027A (ja) * 1982-08-13 1984-02-18 Seiko Epson Corp Ｘ線マスクの製造方法
DE3232498A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
JPS5946854A (ja) 1982-09-10 1984-03-16 Fuji Photo Film Co Ltd 多層分析材料
JPS5992531A (ja) * 1982-11-17 1984-05-28 Mitsubishi Electric Corp Ｘ線露光用マスク
JPS59193456A (ja) * 1983-04-18 1984-11-02 Shuzo Hattori Ｘ線リソグラフイ−用マスクの製造法
JPS60208756A (ja) * 1984-04-03 1985-10-21 Canon Inc 転写方法
JPS61111534A (ja) * 1985-09-30 1986-05-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Ｘ線露光装置
JPS61111535A (ja) * 1985-09-30 1986-05-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Ｘ線露光方法
JP2635322B2 (ja) * 1987-02-17 1997-07-30 松下電子工業株式会社 Ｘ線マスクの製造方法
JPS62151737U (de) * 1987-02-25 1987-09-26
JPH0246458A (ja) * 1988-08-08 1990-02-15 Nec Corp マスク目合せパターン
EP3505145B1 (de) 2013-04-17 2020-08-19 Optimedica Corporation Lasermarkierungen zur achsenausrichtung in der kataraktchirurgie
JP6410861B2 (ja) 2017-03-09 2018-10-24 キヤノン株式会社 計測装置、処理装置および物品製造方法

Also Published As

Publication number Publication date
JPS5057778A (de) 1975-05-20
CH594986A5 (de) 1978-01-31
DE2346719A1 (de) 1975-05-07
IE39829L (en) 1975-03-17
JPS5740649B2 (de) 1982-08-28
NL7412036A (nl) 1975-03-19
GB1474285A (en) 1977-05-18
SE7411633L (de) 1975-03-18
FR2244196A1 (de) 1975-04-11
FR2244196B1 (de) 1977-07-08
LU70924A1 (de) 1975-02-24
IT1021304B (it) 1978-01-30
IE39829B1 (en) 1979-01-03
BE820007A (fr) 1975-03-17
DE2346719C3 (de) 1980-01-24
US4268563A (en) 1981-05-19
DK483974A (de) 1975-06-02
DE2346719B2 (de) 1979-05-17
ATA731774A (de) 1978-06-15

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