JPS5767927A - X-ray exposure device - Google Patents

X-ray exposure device

Info

Publication number
JPS5767927A
JPS5767927A JP55143824A JP14382480A JPS5767927A JP S5767927 A JPS5767927 A JP S5767927A JP 55143824 A JP55143824 A JP 55143824A JP 14382480 A JP14382480 A JP 14382480A JP S5767927 A JPS5767927 A JP S5767927A
Authority
JP
Japan
Prior art keywords
exposure
alignment
region
alignment mark
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55143824A
Other languages
Japanese (ja)
Inventor
Koichi Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55143824A priority Critical patent/JPS5767927A/en
Publication of JPS5767927A publication Critical patent/JPS5767927A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To realize a multiplex alignment with high accuracy, by carrying out the alignment by means of an alignment mark provided slightly outside the exposure region of a mask. CONSTITUTION:An electron beam 22 is irradiated to a rotary target 21 to excite the soft X-rays 23. For instance, the ray 23 excited at the lower part is extracted to an exposure chamber 25 through an X-ray window 24. The chamber 25 is filled with He supplied through an He flow-in port 26. An exposure is carried out to a limited region 28 of a water 27 instead of a collective exposure to be given onto the entire surface of the water 27. This exposure of a minor region is repeated by shifting the wafer 27 in the plane direction. The alignment is carried out by means of an alignment mark 30 provided slightly outside the exposure region on the mask 29 and through an alignment mark detecting part 31. In such a way, a multiplex alignment is made possible under exposure.
JP55143824A 1980-10-15 1980-10-15 X-ray exposure device Pending JPS5767927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143824A JPS5767927A (en) 1980-10-15 1980-10-15 X-ray exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143824A JPS5767927A (en) 1980-10-15 1980-10-15 X-ray exposure device

Publications (1)

Publication Number Publication Date
JPS5767927A true JPS5767927A (en) 1982-04-24

Family

ID=15347801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143824A Pending JPS5767927A (en) 1980-10-15 1980-10-15 X-ray exposure device

Country Status (1)

Country Link
JP (1) JPS5767927A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0253283A2 (en) * 1986-07-15 1988-01-20 Siemens Aktiengesellschaft Semiconductor wafer exposure device with synchrotron radiation in a lithography apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5057778A (en) * 1973-09-17 1975-05-20
JPS5494882A (en) * 1978-01-12 1979-07-26 Oki Electric Ind Co Ltd X-ray exposure apparatus
JPS5583232A (en) * 1978-12-20 1980-06-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for x ray exposure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5057778A (en) * 1973-09-17 1975-05-20
JPS5494882A (en) * 1978-01-12 1979-07-26 Oki Electric Ind Co Ltd X-ray exposure apparatus
JPS5583232A (en) * 1978-12-20 1980-06-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for x ray exposure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0253283A2 (en) * 1986-07-15 1988-01-20 Siemens Aktiengesellschaft Semiconductor wafer exposure device with synchrotron radiation in a lithography apparatus

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