JPS55165630A - Apparatus for electron beam exposure - Google Patents

Apparatus for electron beam exposure

Info

Publication number
JPS55165630A
JPS55165630A JP7371379A JP7371379A JPS55165630A JP S55165630 A JPS55165630 A JP S55165630A JP 7371379 A JP7371379 A JP 7371379A JP 7371379 A JP7371379 A JP 7371379A JP S55165630 A JPS55165630 A JP S55165630A
Authority
JP
Japan
Prior art keywords
specimen
electron beam
thin
slit
free air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7371379A
Other languages
Japanese (ja)
Other versions
JPS5826824B2 (en
Inventor
Yasushi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54073713A priority Critical patent/JPS5826824B2/en
Publication of JPS55165630A publication Critical patent/JPS55165630A/en
Publication of JPS5826824B2 publication Critical patent/JPS5826824B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To shorten the processing time by providing a thin film aperture (slit) at the boundary between a vacuum and air, taking out a controlled electron beam into free air, performing exposure, and eliminating contamination in a mirror tube. CONSTITUTION:The thin-film slit member 8 is atached to a mirror-tube flange 15 with glass solder 14 from the outside, and the high vacuum state is kept in the mirror tube. A well formed electron beam 2 is taken out into free air through the thinnest portion 16 in the thin-filmslit member 8. Both sides of the thin metal film of the slit 8 is etched, and the thickness of the thinnest portion is made to be about 0.5mu. A portion of the electron beam 2 is absorbed by the portion 16, but the most of the beam is taken out into the free air, and a resist film 17 is exposed unless the distance between the slit member 8 and a specimen 11 is large. In this constitution, since the specimen can be exposed in the free air, the inside of the mirror tube is not contaminated by the photoresist and the like, the specimen can be readily placed and removed, air need not be exhausted after the placement of the specimen, and the processing time can be shortened.
JP54073713A 1979-06-12 1979-06-12 Electron beam exposure equipment Expired JPS5826824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54073713A JPS5826824B2 (en) 1979-06-12 1979-06-12 Electron beam exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54073713A JPS5826824B2 (en) 1979-06-12 1979-06-12 Electron beam exposure equipment

Publications (2)

Publication Number Publication Date
JPS55165630A true JPS55165630A (en) 1980-12-24
JPS5826824B2 JPS5826824B2 (en) 1983-06-06

Family

ID=13526129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54073713A Expired JPS5826824B2 (en) 1979-06-12 1979-06-12 Electron beam exposure equipment

Country Status (1)

Country Link
JP (1) JPS5826824B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258620A (en) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> Charged beam device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119742U (en) * 1986-01-21 1987-07-29

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985572A (en) * 1972-12-23 1974-08-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985572A (en) * 1972-12-23 1974-08-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258620A (en) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> Charged beam device

Also Published As

Publication number Publication date
JPS5826824B2 (en) 1983-06-06

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