JPS5787830A - Ion etching device - Google Patents

Ion etching device

Info

Publication number
JPS5787830A
JPS5787830A JP16258280A JP16258280A JPS5787830A JP S5787830 A JPS5787830 A JP S5787830A JP 16258280 A JP16258280 A JP 16258280A JP 16258280 A JP16258280 A JP 16258280A JP S5787830 A JPS5787830 A JP S5787830A
Authority
JP
Japan
Prior art keywords
sample
etching
ion
radiation
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16258280A
Other languages
Japanese (ja)
Inventor
Masashi Iimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16258280A priority Critical patent/JPS5787830A/en
Publication of JPS5787830A publication Critical patent/JPS5787830A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To perform etching of desired depth accurately with good reproducibility by disposing a radiation generating source in the direction of one side of a sample of an ion etching device and a radiation detector on the other side.
CONSTITUTION: In a device of etching a sample 10 by irradiating ion beams of an inert gas such as argon from an ion source 6 in a vacuum vessel 1, a radiation generating source 16 radiating X-rays 17 is provided on one side of the sample 10 and an X-ray detector 20 detecting the X-rays 21 transmitting through the sample 10 is provided on the other side. When the radiation dose thereof attains a preset dose, a relay circuit 24 operates to stop the ion beam irradiation to the sample 10 surface. In this way, the etching of always desired depth is accomplished, although the ion beams are somewhat unstable.
COPYRIGHT: (C)1982,JPO&Japio
JP16258280A 1980-11-20 1980-11-20 Ion etching device Pending JPS5787830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16258280A JPS5787830A (en) 1980-11-20 1980-11-20 Ion etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16258280A JPS5787830A (en) 1980-11-20 1980-11-20 Ion etching device

Publications (1)

Publication Number Publication Date
JPS5787830A true JPS5787830A (en) 1982-06-01

Family

ID=15757324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16258280A Pending JPS5787830A (en) 1980-11-20 1980-11-20 Ion etching device

Country Status (1)

Country Link
JP (1) JPS5787830A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008003374A1 (en) * 2006-07-04 2008-01-10 Eads Deutschland Gmbh Method and device for machining workpieces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008003374A1 (en) * 2006-07-04 2008-01-10 Eads Deutschland Gmbh Method and device for machining workpieces
DE102006030874B4 (en) * 2006-07-04 2013-03-14 Pro-Beam Ag & Co. Kgaa Method and device for machining workpieces

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