JPS5688137A - X-ray transfer mask - Google Patents
X-ray transfer maskInfo
- Publication number
- JPS5688137A JPS5688137A JP16563879A JP16563879A JPS5688137A JP S5688137 A JPS5688137 A JP S5688137A JP 16563879 A JP16563879 A JP 16563879A JP 16563879 A JP16563879 A JP 16563879A JP S5688137 A JPS5688137 A JP S5688137A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ppq
- inorg
- resist
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 8
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To obtain an X-ray transfer mask with superior mechanical strength and pattern accuracy by composing a mask substrate of a polyquinoxaline (PPQ) film and an inorg. thin film showing high X-ray absorption to attain higher adhesion of the PPQ film to the inorg. thin film. CONSTITUTION:A soln. of polyquinoxaline represented by the formula in m-cresol or the like is applied to a glass plate, heated to 100 deg.C in a nitrogen gas stream, and further heated to about 200 deg.C to obtain an about 4mu thick PPQ film. This film is peeled off, uniformly stretched on a holder, and perfectly hardened by heating at 350 deg.C for 3hr. An electron beam resist film is formed on the PPQ film, and patternwise electron beam exposure is carried out. After removing the exposed part by development, an inorg. substance such as Au is vapor deposited on the whole surface. The resist of the unexposed part is then dissolved in a solvent, and simultaneously the Au film on the resist is removed to obtain an X-ray transfer mask. The PPQ film has low heat shrinkage, high strength, high heat resistance and low water absorption, and the superior mask is easily obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16563879A JPS5688137A (en) | 1979-12-21 | 1979-12-21 | X-ray transfer mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16563879A JPS5688137A (en) | 1979-12-21 | 1979-12-21 | X-ray transfer mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5688137A true JPS5688137A (en) | 1981-07-17 |
Family
ID=15816156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16563879A Pending JPS5688137A (en) | 1979-12-21 | 1979-12-21 | X-ray transfer mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688137A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0323264A2 (en) * | 1987-12-29 | 1989-07-05 | Canon Kabushiki Kaisha | X-ray exposure process using an electrically conductive x-ray mask |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5057778A (en) * | 1973-09-17 | 1975-05-20 | ||
JPS5312274A (en) * | 1976-07-21 | 1978-02-03 | Oki Electric Ind Co Ltd | Production of mask for x-ray exposure |
JPS5329574A (en) * | 1976-08-31 | 1978-03-18 | Oki Electric Ind Co Ltd | Transmitting type photoelectric switch |
-
1979
- 1979-12-21 JP JP16563879A patent/JPS5688137A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5057778A (en) * | 1973-09-17 | 1975-05-20 | ||
JPS5312274A (en) * | 1976-07-21 | 1978-02-03 | Oki Electric Ind Co Ltd | Production of mask for x-ray exposure |
JPS5329574A (en) * | 1976-08-31 | 1978-03-18 | Oki Electric Ind Co Ltd | Transmitting type photoelectric switch |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0323264A2 (en) * | 1987-12-29 | 1989-07-05 | Canon Kabushiki Kaisha | X-ray exposure process using an electrically conductive x-ray mask |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5799639A (en) | Treatment of negative type resist | |
JPS55148423A (en) | Method of pattern formation | |
JPS5688137A (en) | X-ray transfer mask | |
JPS57157241A (en) | Formation of resist material and its pattern | |
JPS5637187A (en) | Preparation of transfer sheet | |
JPS5443681A (en) | Electron beam light-exposing method | |
JPS5580323A (en) | Pattern forming method for photoresist-film | |
JPS55164825A (en) | Polymer positive image forming method | |
JPS5679428A (en) | Working of ultra-fine article | |
JPS6423535A (en) | Hardening of photoresist pattern | |
JPS5785228A (en) | Defect correction of photo mask using laser | |
JPS5549834A (en) | Diagrammatic powder-applied layer forming method | |
JPS561941A (en) | Image forming method | |
JPS578541A (en) | Positive type resist material | |
JPS54111756A (en) | Forming method of fluorescent film for color with black matrix | |
JPS56114942A (en) | High energy beam sensitive resist material and its using method | |
JPS5568634A (en) | Manufacture of mask for x-ray exposure | |
JPS57112025A (en) | Formation of pattern | |
JPS5483770A (en) | Forming method for pattern during semiconductor manufacture | |
JPS57199222A (en) | Control of cross-section of lift-off resist stencil | |
JPS5712522A (en) | Forming method of pattern | |
JPS5622433A (en) | Fabrication of polymer mask substrate for x-ray exposure | |
JPS55144247A (en) | Preparation of photomask | |
JPS57176044A (en) | Lithographic plate | |
JPS55158635A (en) | Mask |