JPS5622433A - Fabrication of polymer mask substrate for x-ray exposure - Google Patents
Fabrication of polymer mask substrate for x-ray exposureInfo
- Publication number
- JPS5622433A JPS5622433A JP9813979A JP9813979A JPS5622433A JP S5622433 A JPS5622433 A JP S5622433A JP 9813979 A JP9813979 A JP 9813979A JP 9813979 A JP9813979 A JP 9813979A JP S5622433 A JPS5622433 A JP S5622433A
- Authority
- JP
- Japan
- Prior art keywords
- film
- varnish
- mask substrate
- ray absorption
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
- 239000002966 varnish Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 229920006254 polymer film Polymers 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 230000008602 contraction Effects 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229920001225 polyester resin Polymers 0.000 abstract 1
- 239000004645 polyester resin Substances 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000009719 polyimide resin Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prepare a mask substrate high in dimensional precision, by using a stretched film of a resin varnish contracted in volume by heat hardening. CONSTITUTION:A resinous varnish, such as polyimide resin varnish or polyester resin varnish contracting in heat hardening is used. Said varnish is coated and dried on silicon substrate 1, and heated to 250-400 deg.C to form polymer film 2 having tensile stress due to contraction. Metallic film 3 of chromium or the like is provided on film 2, and 3,000-10,000Angstrom thick X-ray absorption film 4 of gold or platinum is formed on film 3. Films 3, 4 are etched by the electron beam exposure method or the like to form a desired X-ray absorption pattern, this is heat treated at 300- 400 deg.C, then silicon substrate 1 except its border is removed by etching, thus permitting formation of a mask substrate with the X-ray absorption pattern provided on a stretched polymer film held in its border with the frame of silicon substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9813979A JPS5622433A (en) | 1979-08-02 | 1979-08-02 | Fabrication of polymer mask substrate for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9813979A JPS5622433A (en) | 1979-08-02 | 1979-08-02 | Fabrication of polymer mask substrate for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5622433A true JPS5622433A (en) | 1981-03-03 |
Family
ID=14211888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9813979A Pending JPS5622433A (en) | 1979-08-02 | 1979-08-02 | Fabrication of polymer mask substrate for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5622433A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587184A (en) * | 1983-07-27 | 1986-05-06 | Siemens Aktiengesellschaft | Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks |
| US4855197A (en) * | 1986-05-06 | 1989-08-08 | International Business Machines Corporation | Mask for ion, electron or X-ray lithography and method of making it |
-
1979
- 1979-08-02 JP JP9813979A patent/JPS5622433A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587184A (en) * | 1983-07-27 | 1986-05-06 | Siemens Aktiengesellschaft | Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks |
| US4855197A (en) * | 1986-05-06 | 1989-08-08 | International Business Machines Corporation | Mask for ion, electron or X-ray lithography and method of making it |
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