JPS57191636A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS57191636A
JPS57191636A JP7774881A JP7774881A JPS57191636A JP S57191636 A JPS57191636 A JP S57191636A JP 7774881 A JP7774881 A JP 7774881A JP 7774881 A JP7774881 A JP 7774881A JP S57191636 A JPS57191636 A JP S57191636A
Authority
JP
Japan
Prior art keywords
resist
film
resist pattern
developing
prebaked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7774881A
Other languages
Japanese (ja)
Inventor
Iwao Tokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7774881A priority Critical patent/JPS57191636A/en
Publication of JPS57191636A publication Critical patent/JPS57191636A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a high-precision resist pattern, repetitively by coating in >=2 times a positive type resist rising in the speed with which exposed parts are dissolved in a developing solution as solvent resistance is enhanced by heat treatment, and forming laminated resist layers by heat treatment. CONSTITUTION:When a positive type resist pattern used for fabrication of the integrated circuits of semiconductors is formed, a methyl cellosolve acetate solution of a copolymer of tertiary butyl methacrylate and methyl methacrylate in 35-65 weight ratio is coated on the surface of a heatoxidized film 2 on a silicon substrate 1 to form a resist film 3a, and then it is prebaked in the air at 250 deg.C for 1hr. Further, the same solution is coated on the film 3a to form a film 3b and it is prebaked at 230 deg. in nitrogen for 1hr. These resist films are exposed to electron beams in a desired pattern, and a resist pattern is obtained by developing it with ethyl acetate or the like, thus permitting the lower layer 3a to be made higher in developing speed than the upper layer 3b, and the resist in a vertical or reversely tapered shape to be easily formed, and accordingly, a micropattern to be obtained with high precision.
JP7774881A 1981-05-22 1981-05-22 Formation of resist pattern Pending JPS57191636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7774881A JPS57191636A (en) 1981-05-22 1981-05-22 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7774881A JPS57191636A (en) 1981-05-22 1981-05-22 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS57191636A true JPS57191636A (en) 1982-11-25

Family

ID=13642530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7774881A Pending JPS57191636A (en) 1981-05-22 1981-05-22 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS57191636A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125624A (en) * 1982-12-29 1984-07-20 Fujitsu Ltd Forming method of pattern
JPS6097624A (en) * 1983-11-01 1985-05-31 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6286726A (en) * 1985-10-11 1987-04-21 Mitsubishi Electric Corp Formation of resist pattern
JPH03180024A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Method for forming multilayered resist film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125624A (en) * 1982-12-29 1984-07-20 Fujitsu Ltd Forming method of pattern
JPH0376574B2 (en) * 1982-12-29 1991-12-05 Fujitsu Ltd
JPS6097624A (en) * 1983-11-01 1985-05-31 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6286726A (en) * 1985-10-11 1987-04-21 Mitsubishi Electric Corp Formation of resist pattern
JPH03180024A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Method for forming multilayered resist film

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