BRPI0607705A8 - Dispositivo, método de operação de semicondutor controlável, método de determinar as condições operacionais para semicondutor controlável, método para detectar o efeito de túnel da corrente, método para determinar erros reais e potenciais na operação de semicondutor controlável, método de determinar capacidade de manipular potência de dispositivo instalado - Google Patents

Dispositivo, método de operação de semicondutor controlável, método de determinar as condições operacionais para semicondutor controlável, método para detectar o efeito de túnel da corrente, método para determinar erros reais e potenciais na operação de semicondutor controlável, método de determinar capacidade de manipular potência de dispositivo instalado

Info

Publication number
BRPI0607705A8
BRPI0607705A8 BRPI0607705A BRPI0607705A BRPI0607705A8 BR PI0607705 A8 BRPI0607705 A8 BR PI0607705A8 BR PI0607705 A BRPI0607705 A BR PI0607705A BR PI0607705 A BRPI0607705 A BR PI0607705A BR PI0607705 A8 BRPI0607705 A8 BR PI0607705A8
Authority
BR
Brazil
Prior art keywords
controllable
determining
operational parameter
semiconductors
controllable semiconductor
Prior art date
Application number
BRPI0607705A
Other languages
English (en)
Inventor
Jacobson Boris
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of BRPI0607705A2 publication Critical patent/BRPI0607705A2/pt
Publication of BRPI0607705A8 publication Critical patent/BRPI0607705A8/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
    • G01R31/70—Testing of connections between components and printed circuit boards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Abstract

DISPOSITIVO, MÉTODO DE OPERAÇÃO DE SEMICONDUTOR CONTROLÁVEL, MÉTODO DE DETERMINAR AS CONDIÇÕES OPERACIONAIS PARA SEMICONDUTOR CONTROLÁVEL, MÉTODO PARA DETECTAR O EFEITO DE TÚNEL DA CORRENTE, MÉTODO PARA DETERMINAR ERROS REAIS E POTENCIAIS NA OPERAÇÃO DE SEMICONDUTOR CONTROLÁVEL, MÉTODO DE DETERMINAR CAPACIDADE DE MANIPULAR POTÊNCIA DE DISPOSITIVO INSTALADO. É proposto um dispositivo (100) que inclui um semicondutor controlável (102), sensor (106), e controlador (104) O semicondutor controlável (102) é associado com um primeiro parâmetro operacional e um segundo parâmetro operacional, sendo o primeiro parâmetro operacional controlável. O sensor (106) está em comunicação com o dispositivo semicondutor controlável (102) e adquire dados relativos ao segundo parâmetro operacional. O controlador (104) está em comunicação com o dispositivo semicondutor controlável (102) e com o sensor (106). O controlador (104) é configurado de modo a acessar dados do dispositivo associados com o semicondutor controlável (102), a controlar o primeiro parâmetro operacional e a receber dados do primeiro sensor (106) relativos ao segundo parâmetro operacional. O controlador (104) determina um primeiro valor previsto dependente dos dados do dispositivo, compara os dados relativos ao segundo parâmetro operacional com o primeiro valor previsto e, se uma primeira condição for detectada com base nesta comparação, modifica dinamicamente o primeiro parâmetro operacional.
BRPI0607705A 2005-04-01 2006-03-21 Dispositivo, método de operação de semicondutor controlável, método de determinar as condições operacionais para semicondutor controlável, método para detectar o efeito de túnel da corrente, método para determinar erros reais e potenciais na operação de semicondutor controlável, método de determinar capacidade de manipular potência de dispositivo instalado BRPI0607705A8 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/098,033 US7839201B2 (en) 2005-04-01 2005-04-01 Integrated smart power switch
US11/098.033 2005-04-01
PCT/US2006/010114 WO2006107579A2 (en) 2005-04-01 2006-03-21 Integrated smart power switch

Publications (2)

Publication Number Publication Date
BRPI0607705A2 BRPI0607705A2 (pt) 2010-10-05
BRPI0607705A8 true BRPI0607705A8 (pt) 2018-02-06

Family

ID=36808379

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0607705A BRPI0607705A8 (pt) 2005-04-01 2006-03-21 Dispositivo, método de operação de semicondutor controlável, método de determinar as condições operacionais para semicondutor controlável, método para detectar o efeito de túnel da corrente, método para determinar erros reais e potenciais na operação de semicondutor controlável, método de determinar capacidade de manipular potência de dispositivo instalado

Country Status (11)

Country Link
US (2) US7839201B2 (pt)
EP (2) EP2270983B1 (pt)
JP (2) JP2008535255A (pt)
KR (2) KR101236455B1 (pt)
CN (1) CN101167251B (pt)
AU (1) AU2006232963B2 (pt)
BR (1) BRPI0607705A8 (pt)
CA (1) CA2598485C (pt)
IL (1) IL184796A (pt)
TW (1) TWI392230B (pt)
WO (1) WO2006107579A2 (pt)

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EP2270983A1 (en) 2011-01-05
US8076967B2 (en) 2011-12-13
KR20120034760A (ko) 2012-04-12
CN101167251A (zh) 2008-04-23
JP6282169B2 (ja) 2018-02-21
EP1867046A2 (en) 2007-12-19
AU2006232963B2 (en) 2009-12-03
CA2598485C (en) 2015-08-11
TWI392230B (zh) 2013-04-01
KR101262919B1 (ko) 2013-05-09
IL184796A (en) 2011-09-27
CA2598485A1 (en) 2006-10-12
CN101167251B (zh) 2011-12-28
KR101236455B1 (ko) 2013-02-22
EP2270983B1 (en) 2018-07-25
WO2006107579A2 (en) 2006-10-12
US20110050324A1 (en) 2011-03-03
KR20080002843A (ko) 2008-01-04
BRPI0607705A2 (pt) 2010-10-05
TW200705809A (en) 2007-02-01
US7839201B2 (en) 2010-11-23
JP2014197684A (ja) 2014-10-16
US20060221527A1 (en) 2006-10-05
AU2006232963A1 (en) 2006-10-12
IL184796A0 (en) 2007-12-03
WO2006107579A3 (en) 2007-03-08
JP2008535255A (ja) 2008-08-28

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