JP6954775B2 - デバイス解析装置及びデバイス解析方法 - Google Patents
デバイス解析装置及びデバイス解析方法 Download PDFInfo
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- JP6954775B2 JP6954775B2 JP2017127304A JP2017127304A JP6954775B2 JP 6954775 B2 JP6954775 B2 JP 6954775B2 JP 2017127304 A JP2017127304 A JP 2017127304A JP 2017127304 A JP2017127304 A JP 2017127304A JP 6954775 B2 JP6954775 B2 JP 6954775B2
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- 238000004458 analytical method Methods 0.000 title claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 180
- 238000001514 detection method Methods 0.000 claims description 170
- 230000015556 catabolic process Effects 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000000523 sample Substances 0.000 description 16
- 238000005286 illumination Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims (13)
- パワー半導体デバイスの良否判別を実行するデバイス解析装置であって、
前記パワー半導体デバイスに電圧信号を印加する印加部と、
前記パワー半導体デバイスからの光を複数の検出位置で検出し、検出結果に基づく検出信号を出力する光検出部と、
前記検出信号の時間変化に基づいて前記パワー半導体デバイスの良否を判別する判別部と、を備え、
前記検出信号の時間変化同士を比較する比較部を更に備え、
前記判別部は、前記比較部での比較結果に基づいて前記パワー半導体デバイスの良否を判別するデバイス解析装置。 - 前記光検出部は、前記パワー半導体デバイスの周辺部を含む複数の検出位置で前記パワー半導体デバイスからの光を検出する請求項1記載のデバイス解析装置。
- 前記光検出部は、前記パワー半導体デバイスからの光を前記複数の検出位置で同時に検出する請求項1又は2記載のデバイス解析装置。
- 前記光検出部は、前記パワー半導体デバイスからの光を前記複数の検出位置で個別に検出する請求項1〜3のいずれか一項記載のデバイス解析装置。
- 前記印加部は、アバランシェ降伏を生じさせる電圧信号を前記パワー半導体デバイスに印加する請求項1〜4のいずれか一項記載のデバイス解析装置。
- 前記光検出部は、前記アバランシェ降伏に起因して前記パワー半導体デバイスで生じた発光を検出する請求項5記載のデバイス解析装置。
- 前記光検出部の時間分解能は、1μs以下である請求項1〜6のいずれか一項記載のデバイス解析装置。
- パワー半導体デバイスの良否判別を実行するデバイス解析方法であって、
前記パワー半導体デバイスに電圧信号を印加する印加ステップと、
前記パワー半導体デバイスからの光を複数の検出位置で検出し、検出結果に基づく検出信号を出力する光検出ステップと、
前記検出信号の時間変化に基づいて前記パワー半導体デバイスの良否を判別する判別ステップと、を備え、
前記検出信号の時間変化同士を比較する比較ステップを更に備え、
前記判別ステップにおいて、前記比較ステップでの比較結果に基づいて前記パワー半導体デバイスの良否を判別するデバイス解析方法。 - 前記光検出ステップにおいて、前記パワー半導体デバイスの周辺部を含む複数の検出位置で前記パワー半導体デバイスからの光を検出する請求項8記載のデバイス解析方法。
- 前記光検出ステップにおいて、前記パワー半導体デバイスからの光を前記複数の検出位置で同時に検出する請求項8又は9記載のデバイス解析方法。
- 前記光検出ステップにおいて、前記パワー半導体デバイスからの光を前記複数の検出位置で個別に検出する請求項8〜10のいずれか一項記載のデバイス解析方法。
- 前記印加ステップにおいて、アバランシェ降伏を生じさせる電圧信号を前記パワー半導体デバイスに印加する請求項8〜11のいずれか一項記載のデバイス解析方法。
- 前記光検出ステップにおいて、前記アバランシェ降伏に起因して前記パワー半導体デバイスで生じた発光を検出する請求項12記載のデバイス解析方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017127304A JP6954775B2 (ja) | 2017-06-29 | 2017-06-29 | デバイス解析装置及びデバイス解析方法 |
US16/624,008 US11460497B2 (en) | 2017-06-29 | 2018-04-18 | Device analysis apparatus and device analysis method |
PCT/JP2018/016039 WO2019003599A1 (ja) | 2017-06-29 | 2018-04-18 | デバイス解析装置及びデバイス解析方法 |
KR1020207001027A KR102423024B1 (ko) | 2017-06-29 | 2018-04-18 | 디바이스 해석 장치 및 디바이스 해석 방법 |
EP18824703.5A EP3647799B1 (en) | 2017-06-29 | 2018-04-18 | Device analysis apparatus and device analysis method |
CN201880034008.6A CN110662973B (zh) | 2017-06-29 | 2018-04-18 | 器件解析装置及器件解析方法 |
SG11201907865XA SG11201907865XA (en) | 2017-06-29 | 2018-04-18 | Device analysis apparatus and device analysis method |
TW107115547A TWI783997B (zh) | 2017-06-29 | 2018-05-08 | 元件解析裝置及元件解析方法 |
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US (1) | US11460497B2 (ja) |
EP (1) | EP3647799B1 (ja) |
JP (1) | JP6954775B2 (ja) |
KR (1) | KR102423024B1 (ja) |
CN (1) | CN110662973B (ja) |
SG (1) | SG11201907865XA (ja) |
TW (1) | TWI783997B (ja) |
WO (1) | WO2019003599A1 (ja) |
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JPH05315425A (ja) * | 1992-05-14 | 1993-11-26 | Nec Corp | 化合物半導体電界効果トランジスタ回路の評価方法及び装置 |
JP3460257B2 (ja) * | 1993-08-23 | 2003-10-27 | 株式会社村田製作所 | 半導体検査装置 |
US6111271A (en) * | 1996-03-28 | 2000-08-29 | University Of Pretoria | Optoelectronic device with separately controllable carrier injection means |
US5940545A (en) | 1996-07-18 | 1999-08-17 | International Business Machines Corporation | Noninvasive optical method for measuring internal switching and other dynamic parameters of CMOS circuits |
JPH11230972A (ja) * | 1998-02-14 | 1999-08-27 | Ricoh Co Ltd | 半導体評価装置 |
US6346821B1 (en) * | 1998-03-27 | 2002-02-12 | Infineon Technologies Ag | Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices |
US6605951B1 (en) * | 2000-12-11 | 2003-08-12 | Lsi Logic Corporation | Interconnector and method of connecting probes to a die for functional analysis |
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WO2006001108A1 (ja) * | 2004-06-25 | 2006-01-05 | Japan Science And Technology Agency | 探針装置 |
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- 2017-06-29 JP JP2017127304A patent/JP6954775B2/ja active Active
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2018
- 2018-04-18 US US16/624,008 patent/US11460497B2/en active Active
- 2018-04-18 KR KR1020207001027A patent/KR102423024B1/ko active IP Right Grant
- 2018-04-18 EP EP18824703.5A patent/EP3647799B1/en active Active
- 2018-04-18 WO PCT/JP2018/016039 patent/WO2019003599A1/ja unknown
- 2018-04-18 SG SG11201907865XA patent/SG11201907865XA/en unknown
- 2018-04-18 CN CN201880034008.6A patent/CN110662973B/zh active Active
- 2018-05-08 TW TW107115547A patent/TWI783997B/zh active
Also Published As
Publication number | Publication date |
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EP3647799A4 (en) | 2021-04-07 |
WO2019003599A1 (ja) | 2019-01-03 |
US11460497B2 (en) | 2022-10-04 |
SG11201907865XA (en) | 2019-09-27 |
US20200110127A1 (en) | 2020-04-09 |
JP2019011968A (ja) | 2019-01-24 |
KR20200024223A (ko) | 2020-03-06 |
KR102423024B1 (ko) | 2022-07-21 |
CN110662973A (zh) | 2020-01-07 |
EP3647799A1 (en) | 2020-05-06 |
TW201905431A (zh) | 2019-02-01 |
CN110662973B (zh) | 2022-04-19 |
TWI783997B (zh) | 2022-11-21 |
EP3647799B1 (en) | 2023-08-23 |
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