SG11201907865XA - Device analysis apparatus and device analysis method - Google Patents

Device analysis apparatus and device analysis method

Info

Publication number
SG11201907865XA
SG11201907865XA SG11201907865XA SG11201907865XA SG11201907865XA SG 11201907865X A SG11201907865X A SG 11201907865XA SG 11201907865X A SG11201907865X A SG 11201907865XA SG 11201907865X A SG11201907865X A SG 11201907865XA SG 11201907865X A SG11201907865X A SG 11201907865XA
Authority
SG
Singapore
Prior art keywords
device analysis
detection
semiconductor device
analysis apparatus
power semiconductor
Prior art date
Application number
SG11201907865XA
Inventor
Toru Matsumoto
Koichi Endo
Tomonori Nakamura
Kazushige Koshikawa
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of SG11201907865XA publication Critical patent/SG11201907865XA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

A device analysis apparatus is a device analysis apparatus for determining a quality of a power semiconductor device P, including an application unit 12 that applies a voltage signal to the power 5 semiconductor device P, a light detection unit 13 that detects light from the power semiconductor device at a plurality of detection positions A P to D and outputs detection signals based on detection results, and a determination unit 33 that determines the quality of the power semiconductor device P based on temporal changes of the detection 10 signals. Figure 1 29
SG11201907865XA 2017-06-29 2018-04-18 Device analysis apparatus and device analysis method SG11201907865XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017127304A JP6954775B2 (en) 2017-06-29 2017-06-29 Device analysis device and device analysis method
PCT/JP2018/016039 WO2019003599A1 (en) 2017-06-29 2018-04-18 Device analysis apparatus and device analysis method

Publications (1)

Publication Number Publication Date
SG11201907865XA true SG11201907865XA (en) 2019-09-27

Family

ID=64740541

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907865XA SG11201907865XA (en) 2017-06-29 2018-04-18 Device analysis apparatus and device analysis method

Country Status (8)

Country Link
US (1) US11460497B2 (en)
EP (1) EP3647799B1 (en)
JP (1) JP6954775B2 (en)
KR (1) KR102423024B1 (en)
CN (1) CN110662973B (en)
SG (1) SG11201907865XA (en)
TW (1) TWI783997B (en)
WO (1) WO2019003599A1 (en)

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US660591A (en) * 1899-12-26 1900-10-30 Allen A Russell Hood for pneumatic stackers.
US4680635A (en) * 1986-04-01 1987-07-14 Intel Corporation Emission microscope
DE3889986T2 (en) * 1987-07-13 1994-09-15 Hamamatsu Photonics Kk Arrangement of a voltage detector.
JP3004830B2 (en) * 1991-12-09 2000-01-31 松下電器産業株式会社 Apparatus and method for evaluating semiconductor integrated circuit
US5504431A (en) * 1991-12-09 1996-04-02 Matsushita Electric Industrial Co., Ltd. Device for and method of evaluating semiconductor integrated circuit
JPH05315425A (en) * 1992-05-14 1993-11-26 Nec Corp Method and equipment for evaluating compound semiconductor field-effect transistor circuit
JP3460257B2 (en) * 1993-08-23 2003-10-27 株式会社村田製作所 Semiconductor inspection equipment
US6111271A (en) * 1996-03-28 2000-08-29 University Of Pretoria Optoelectronic device with separately controllable carrier injection means
US5940545A (en) * 1996-07-18 1999-08-17 International Business Machines Corporation Noninvasive optical method for measuring internal switching and other dynamic parameters of CMOS circuits
JPH11230972A (en) * 1998-02-14 1999-08-27 Ricoh Co Ltd Semiconductor evaluating apparatus
US6346821B1 (en) * 1998-03-27 2002-02-12 Infineon Technologies Ag Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
US6605951B1 (en) * 2000-12-11 2003-08-12 Lsi Logic Corporation Interconnector and method of connecting probes to a die for functional analysis
US6621275B2 (en) * 2001-11-28 2003-09-16 Optonics Inc. Time resolved non-invasive diagnostics system
JP4452278B2 (en) * 2004-06-25 2010-04-21 独立行政法人科学技術振興機構 Probe device
US7839201B2 (en) * 2005-04-01 2010-11-23 Raytheon Company Integrated smart power switch
JP2007218805A (en) * 2006-02-17 2007-08-30 Advantest Corp Measuring device and method
JP5192661B2 (en) * 2006-05-29 2013-05-08 一般財団法人電力中央研究所 Method for manufacturing silicon carbide semiconductor element
US8754633B2 (en) * 2009-05-01 2014-06-17 Dcg Systems, Inc. Systems and method for laser voltage imaging state mapping
KR101279007B1 (en) * 2011-10-18 2013-07-02 가부시키가이샤 어드밴티스트 Test apparatus and test method
JP2013120075A (en) * 2011-12-06 2013-06-17 Mitsubishi Electric Corp Failure analysis apparatus, failure analysis method, screening test apparatus, and screening test method
DE102013103014A1 (en) * 2012-04-03 2013-10-10 Jacobs University Bremen Ggmbh Method for determining quality parameter, particularly variability parameter, of photovoltaic module, involves directing light signal of light source to photovoltaic module, where multiple photovoltaic cells are shadowed
JP6083129B2 (en) * 2012-04-27 2017-02-22 富士電機株式会社 Semiconductor device manufacturing method and manufacturing apparatus
JP6317321B2 (en) * 2013-02-19 2018-04-25 浜松ホトニクス株式会社 Electric field concentration position observation apparatus and electric field concentration position observation method
JP2014236124A (en) * 2013-06-03 2014-12-15 三菱電機株式会社 Semiconductor device and method for inspecting the same
US9903824B2 (en) 2014-04-10 2018-02-27 Fei Efa, Inc. Spectral mapping of photo emission
WO2016002003A1 (en) 2014-07-01 2016-01-07 株式会社日立ハイテクノロジーズ Substrate inspection apparatus and substrate inspection method
EP3206226B1 (en) * 2014-10-09 2020-01-15 Hamamatsu Photonics K.K. Analysis system and analysis method
CN105807197A (en) * 2014-12-29 2016-07-27 中国科学院苏州纳米技术与纳米仿生研究所 Detection method of semiconductor laser degradation mechanism

Also Published As

Publication number Publication date
US11460497B2 (en) 2022-10-04
KR20200024223A (en) 2020-03-06
CN110662973B (en) 2022-04-19
WO2019003599A1 (en) 2019-01-03
EP3647799B1 (en) 2023-08-23
JP6954775B2 (en) 2021-10-27
TWI783997B (en) 2022-11-21
TW201905431A (en) 2019-02-01
JP2019011968A (en) 2019-01-24
EP3647799A4 (en) 2021-04-07
CN110662973A (en) 2020-01-07
EP3647799A1 (en) 2020-05-06
US20200110127A1 (en) 2020-04-09
KR102423024B1 (en) 2022-07-21

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