BR7901763A - Dissipador de tensoes termicamente e eletricamente condutivo para dispositivo semicondutor - Google Patents

Dissipador de tensoes termicamente e eletricamente condutivo para dispositivo semicondutor

Info

Publication number
BR7901763A
BR7901763A BR7901763A BR7901763A BR7901763A BR 7901763 A BR7901763 A BR 7901763A BR 7901763 A BR7901763 A BR 7901763A BR 7901763 A BR7901763 A BR 7901763A BR 7901763 A BR7901763 A BR 7901763A
Authority
BR
Brazil
Prior art keywords
thermally
semiconductor device
electrically conductive
conductive voltage
voltage sink
Prior art date
Application number
BR7901763A
Other languages
English (en)
Portuguese (pt)
Inventor
D Houston
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BR7901763A publication Critical patent/BR7901763A/pt

Links

Classifications

    • H10W40/257—
    • H10W40/10—
    • H10W70/22—
    • H10W72/00—
BR7901763A 1978-03-22 1979-03-22 Dissipador de tensoes termicamente e eletricamente condutivo para dispositivo semicondutor BR7901763A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88910078A 1978-03-22 1978-03-22
US05/944,372 US4385310A (en) 1978-03-22 1978-09-21 Structured copper strain buffer

Publications (1)

Publication Number Publication Date
BR7901763A true BR7901763A (pt) 1979-11-20

Family

ID=27128904

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7901763A BR7901763A (pt) 1978-03-22 1979-03-22 Dissipador de tensoes termicamente e eletricamente condutivo para dispositivo semicondutor

Country Status (8)

Country Link
US (1) US4385310A (cg-RX-API-DMAC10.html)
JP (1) JPS54148375A (cg-RX-API-DMAC10.html)
AR (1) AR216582A1 (cg-RX-API-DMAC10.html)
BR (1) BR7901763A (cg-RX-API-DMAC10.html)
DE (1) DE2910959C2 (cg-RX-API-DMAC10.html)
FR (1) FR2420845B1 (cg-RX-API-DMAC10.html)
GB (1) GB2017408B (cg-RX-API-DMAC10.html)
SE (1) SE433021B (cg-RX-API-DMAC10.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement
WO1980001967A1 (en) * 1979-03-08 1980-09-18 Gen Electric Thermo-compression bonding a semiconductor to strain buffer
SE420964B (sv) * 1980-03-27 1981-11-09 Asea Ab Kompositmaterial och sett for dess framstellning
DE3031912A1 (de) * 1980-08-23 1982-04-01 Brown, Boveri & Cie Ag, 6800 Mannheim Anordnung zur potentialunabhaengigen waermeabfuehrung
US4574299A (en) * 1981-03-02 1986-03-04 General Electric Company Thyristor packaging system
US4481403A (en) * 1983-03-04 1984-11-06 Honeywell Inc. Temperature control of solid state circuit chips
US4949896A (en) * 1984-10-19 1990-08-21 The United States Of America As Represented By The Secretary Of The Air Force Technique of assembling structures using vapor phase soldering
US5262718A (en) * 1985-08-05 1993-11-16 Raychem Limited Anisotropically electrically conductive article
US5631447A (en) * 1988-02-05 1997-05-20 Raychem Limited Uses of uniaxially electrically conductive articles
US5637925A (en) * 1988-02-05 1997-06-10 Raychem Ltd Uses of uniaxially electrically conductive articles
US5139887A (en) * 1988-12-27 1992-08-18 Barnes Group, Inc. Superplastically formed cellular article
US5258649A (en) * 1989-05-20 1993-11-02 Hitachi, Ltd. Semiconductor device and electronic apparatus using semiconductor device
US5069978A (en) * 1990-10-04 1991-12-03 Gte Products Corporation Brazed composite having interlayer of expanded metal
DE19843309A1 (de) * 1998-09-22 2000-03-23 Asea Brown Boveri Kurzschlussfestes IGBT Modul
WO2000034539A1 (fr) * 1998-12-07 2000-06-15 Hitachi, Ltd. Materiau composite et son utilisation
DE10022341B4 (de) * 2000-05-08 2005-03-31 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Elektronisches Leistungsmodul
EP1182701A1 (de) * 2000-08-21 2002-02-27 Abb Research Ltd. Verfahren zur Herstellung eines Pufferelementes zur Verminderung von mechanischen Spannungen
EP1246242A1 (de) * 2001-03-26 2002-10-02 Abb Research Ltd. Kurzschlussfestes IGBT Modul
US6833617B2 (en) 2001-12-18 2004-12-21 Hitachi, Ltd. Composite material including copper and cuprous oxide and application thereof
US8405996B2 (en) * 2009-06-30 2013-03-26 General Electric Company Article including thermal interface element and method of preparation
US10081163B2 (en) 2013-03-15 2018-09-25 All-Clad Metalcrafters Llc Cooking utensil having a graphite core
US9585514B2 (en) 2013-03-15 2017-03-07 All-Clad Metalsrafters, LLC Heat zone pan
WO2014145449A1 (en) 2013-03-15 2014-09-18 All-Clad Metalcrafters Llc Cookware with selectively bonded layers
US10292255B2 (en) 2016-05-18 2019-05-14 Raytheon Company Expanding thermal device and system for effecting heat transfer within electronics assemblies
US11364706B2 (en) 2018-12-19 2022-06-21 All-Clad Metalcrafters, L.L.C. Cookware having a graphite core
DE102022208360A1 (de) 2022-08-11 2023-07-06 Zf Friedrichshafen Ag Leistungsmodul und verfahren zur montage eines leistungsmoduls

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE537167A (cg-RX-API-DMAC10.html) * 1954-04-07
DE1141029B (de) * 1960-06-23 1962-12-13 Siemens Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1153461B (de) * 1960-06-23 1963-08-29 Siemens Ag Halbleiteranordnung
US3365787A (en) * 1963-06-19 1968-01-30 Hexcel Corp Method of making metal honeycomb sandwich structure
US3256598A (en) * 1963-07-25 1966-06-21 Martin Marietta Corp Diffusion bonding
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
US3787958A (en) * 1965-08-18 1974-01-29 Atomic Energy Commission Thermo-electric modular structure and method of making same
US3871014A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform solder wettable areas on the substrate
CA892844A (en) * 1970-08-14 1972-02-08 H. Hantusch Gerald Semiconductor heat sink
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
JPS5039066A (cg-RX-API-DMAC10.html) * 1973-08-08 1975-04-10
JPS5295172A (en) * 1976-02-06 1977-08-10 Mitsubishi Electric Corp Semi-conductor
JPS52147064A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor device
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
GB1598174A (en) * 1977-05-31 1981-09-16 Ibm Cooling electrical apparatus
US4089456A (en) * 1977-06-28 1978-05-16 United Technologies Corporation Controlled-pressure diffusion bonding and fixture therefor

Also Published As

Publication number Publication date
AR216582A1 (es) 1979-12-28
DE2910959A1 (de) 1979-10-18
GB2017408A (en) 1979-10-03
DE2910959C2 (de) 1993-11-11
GB2017408B (en) 1982-07-21
SE7902586L (sv) 1979-09-23
JPS6336136B2 (cg-RX-API-DMAC10.html) 1988-07-19
FR2420845A1 (fr) 1979-10-19
US4385310A (en) 1983-05-24
FR2420845B1 (fr) 1986-05-09
SE433021B (sv) 1984-04-30
JPS54148375A (en) 1979-11-20

Similar Documents

Publication Publication Date Title
BR7901763A (pt) Dissipador de tensoes termicamente e eletricamente condutivo para dispositivo semicondutor
BR7900229A (pt) Dispositivo semicondutor
KR870004526A (ko) 실리콘 온 인슐레이터 구조를 갖는 반도체 장치
IT1114012B (it) Dispositivi semiconduttori e circuiti integrati
NL7613428A (nl) Niet-omkeerbaar halfgeleiderschakelelement en van dit element gebruikmakende halfgeleiderge- heugeninrichting.
IT1130927B (it) Composizione di organopolisilossano liquido vulcanizzabile ed elettricamente conduttivo
BR8003099A (pt) Dispositivo inversor de corrente controlada tendo protecao controlada sobre tensao do semicondutor
EP0025050A4 (en) DIELECTRICALLY INSULATED HIGH VOLTAGE SEMICONDUCTOR DEVICES.
SE7900083L (sv) Halvledaranordning
KR870005450A (ko) 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
BR7803561A (pt) Dispositivo e conjunto semicondutor
BR8504783A (pt) Dispositivo de montagem e de conexao para semicondutor de potencia
BR7808124A (pt) Dispositivo semicondutor
IT1114013B (it) Dispositivi semiconduttori con un contatto ohmico con semiconduttori di tipo n dei gruppi iii-v
MX153416A (es) Mejoras en dispositivo fotovoltaico formado de material semiconductor
BR7705488A (pt) Dispositivo semicondutor
BR8105277A (pt) Comutador semicondutor de alta voltagem
DE2963094D1 (en) Constant voltage threshold semiconductor device
SE7700222L (sv) Elektrisk kontakt samt forbindningsanordning innefattande sadan kontakt
SE7902980L (sv) Halvledaranordning
BE895437A (nl) Elektrisch geleidende inrichting
BR7800627A (pt) Dispositivo semicondutor
IT1167554B (it) Dispositivo e semiconduttore planare
IT1113687B (it) Dispositivo semiconduttore con strato policristallino munito di contatto elettrico
KR860006136A (ko) 반도체 집적 회로 장치