AR216582A1 - Elemento intermedio de alivio de tension,termica y electricamente conductor,para un dispositivo semiconductor - Google Patents

Elemento intermedio de alivio de tension,termica y electricamente conductor,para un dispositivo semiconductor

Info

Publication number
AR216582A1
AR216582A1 AR27591279A AR27591279A AR216582A1 AR 216582 A1 AR216582 A1 AR 216582A1 AR 27591279 A AR27591279 A AR 27591279A AR 27591279 A AR27591279 A AR 27591279A AR 216582 A1 AR216582 A1 AR 216582A1
Authority
AR
Argentina
Prior art keywords
thermal
electrically conductive
intermediate element
stress relief
semiconductive device
Prior art date
Application number
AR27591279A
Other languages
English (en)
Spanish (es)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of AR216582A1 publication Critical patent/AR216582A1/es

Links

Classifications

    • H10W40/257—
    • H10W40/10—
    • H10W70/22—
    • H10W72/00—
AR27591279A 1978-03-22 1979-03-22 Elemento intermedio de alivio de tension,termica y electricamente conductor,para un dispositivo semiconductor AR216582A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88910078A 1978-03-22 1978-03-22
US05/944,372 US4385310A (en) 1978-03-22 1978-09-21 Structured copper strain buffer

Publications (1)

Publication Number Publication Date
AR216582A1 true AR216582A1 (es) 1979-12-28

Family

ID=27128904

Family Applications (1)

Application Number Title Priority Date Filing Date
AR27591279A AR216582A1 (es) 1978-03-22 1979-03-22 Elemento intermedio de alivio de tension,termica y electricamente conductor,para un dispositivo semiconductor

Country Status (8)

Country Link
US (1) US4385310A (cg-RX-API-DMAC10.html)
JP (1) JPS54148375A (cg-RX-API-DMAC10.html)
AR (1) AR216582A1 (cg-RX-API-DMAC10.html)
BR (1) BR7901763A (cg-RX-API-DMAC10.html)
DE (1) DE2910959C2 (cg-RX-API-DMAC10.html)
FR (1) FR2420845B1 (cg-RX-API-DMAC10.html)
GB (1) GB2017408B (cg-RX-API-DMAC10.html)
SE (1) SE433021B (cg-RX-API-DMAC10.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement
WO1980001967A1 (en) * 1979-03-08 1980-09-18 Gen Electric Thermo-compression bonding a semiconductor to strain buffer
SE420964B (sv) * 1980-03-27 1981-11-09 Asea Ab Kompositmaterial och sett for dess framstellning
DE3031912A1 (de) * 1980-08-23 1982-04-01 Brown, Boveri & Cie Ag, 6800 Mannheim Anordnung zur potentialunabhaengigen waermeabfuehrung
US4574299A (en) * 1981-03-02 1986-03-04 General Electric Company Thyristor packaging system
US4481403A (en) * 1983-03-04 1984-11-06 Honeywell Inc. Temperature control of solid state circuit chips
US4949896A (en) * 1984-10-19 1990-08-21 The United States Of America As Represented By The Secretary Of The Air Force Technique of assembling structures using vapor phase soldering
US5262718A (en) * 1985-08-05 1993-11-16 Raychem Limited Anisotropically electrically conductive article
US5637925A (en) * 1988-02-05 1997-06-10 Raychem Ltd Uses of uniaxially electrically conductive articles
US5631447A (en) * 1988-02-05 1997-05-20 Raychem Limited Uses of uniaxially electrically conductive articles
US5139887A (en) * 1988-12-27 1992-08-18 Barnes Group, Inc. Superplastically formed cellular article
US5258649A (en) * 1989-05-20 1993-11-02 Hitachi, Ltd. Semiconductor device and electronic apparatus using semiconductor device
US5069978A (en) * 1990-10-04 1991-12-03 Gte Products Corporation Brazed composite having interlayer of expanded metal
DE19843309A1 (de) * 1998-09-22 2000-03-23 Asea Brown Boveri Kurzschlussfestes IGBT Modul
CN1093565C (zh) * 1998-12-07 2002-10-30 株式会社日立制作所 复合材料及其应用
DE10022341B4 (de) * 2000-05-08 2005-03-31 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Elektronisches Leistungsmodul
EP1182701A1 (de) * 2000-08-21 2002-02-27 Abb Research Ltd. Verfahren zur Herstellung eines Pufferelementes zur Verminderung von mechanischen Spannungen
EP1246242A1 (de) * 2001-03-26 2002-10-02 Abb Research Ltd. Kurzschlussfestes IGBT Modul
US20030146499A1 (en) 2001-12-18 2003-08-07 Yasuo Kondo Composite material including copper and cuprous oxide and application thereof
US8405996B2 (en) * 2009-06-30 2013-03-26 General Electric Company Article including thermal interface element and method of preparation
US10081163B2 (en) 2013-03-15 2018-09-25 All-Clad Metalcrafters Llc Cooking utensil having a graphite core
JP6466908B2 (ja) 2013-03-15 2019-02-06 オール−クラッド メタルクラフターズ エルエルシー 選択的結合層を有する調理器具
US9585514B2 (en) 2013-03-15 2017-03-07 All-Clad Metalsrafters, LLC Heat zone pan
US10292255B2 (en) 2016-05-18 2019-05-14 Raytheon Company Expanding thermal device and system for effecting heat transfer within electronics assemblies
US11364706B2 (en) 2018-12-19 2022-06-21 All-Clad Metalcrafters, L.L.C. Cookware having a graphite core
DE102022208360A1 (de) 2022-08-11 2023-07-06 Zf Friedrichshafen Ag Leistungsmodul und verfahren zur montage eines leistungsmoduls

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BE537167A (cg-RX-API-DMAC10.html) * 1954-04-07
DE1141029B (de) * 1960-06-23 1962-12-13 Siemens Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1153461B (de) * 1960-06-23 1963-08-29 Siemens Ag Halbleiteranordnung
US3365787A (en) * 1963-06-19 1968-01-30 Hexcel Corp Method of making metal honeycomb sandwich structure
US3256598A (en) * 1963-07-25 1966-06-21 Martin Marietta Corp Diffusion bonding
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
US3787958A (en) * 1965-08-18 1974-01-29 Atomic Energy Commission Thermo-electric modular structure and method of making same
US3871014A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform solder wettable areas on the substrate
CA892844A (en) * 1970-08-14 1972-02-08 H. Hantusch Gerald Semiconductor heat sink
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
JPS5039066A (cg-RX-API-DMAC10.html) * 1973-08-08 1975-04-10
JPS5295172A (en) * 1976-02-06 1977-08-10 Mitsubishi Electric Corp Semi-conductor
JPS52147064A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor device
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
GB1598174A (en) * 1977-05-31 1981-09-16 Ibm Cooling electrical apparatus
US4089456A (en) * 1977-06-28 1978-05-16 United Technologies Corporation Controlled-pressure diffusion bonding and fixture therefor

Also Published As

Publication number Publication date
GB2017408A (en) 1979-10-03
JPS54148375A (en) 1979-11-20
GB2017408B (en) 1982-07-21
SE7902586L (sv) 1979-09-23
FR2420845A1 (fr) 1979-10-19
DE2910959C2 (de) 1993-11-11
SE433021B (sv) 1984-04-30
DE2910959A1 (de) 1979-10-18
US4385310A (en) 1983-05-24
JPS6336136B2 (cg-RX-API-DMAC10.html) 1988-07-19
FR2420845B1 (fr) 1986-05-09
BR7901763A (pt) 1979-11-20

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