BR112018068970A2 - substrato de pastilha embutido em perfuração traseira - Google Patents
substrato de pastilha embutido em perfuração traseiraInfo
- Publication number
- BR112018068970A2 BR112018068970A2 BR112018068970-0A BR112018068970A BR112018068970A2 BR 112018068970 A2 BR112018068970 A2 BR 112018068970A2 BR 112018068970 A BR112018068970 A BR 112018068970A BR 112018068970 A2 BR112018068970 A2 BR 112018068970A2
- Authority
- BR
- Brazil
- Prior art keywords
- tablet
- substrate
- conductive pad
- back hole
- substrate embedded
- Prior art date
Links
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
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- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
um dispositivo e método de fabricação são fornecidos. o dispositivo inclui um substrato tendo um primeiro lado e um segundo lado oposto, uma cavidade definida dentro do substrato a partir do primeiro lado, uma pastilha acoplada a um piso da cavidade e tendo uma almofada condutora em um lado da pastilha distal ao piso da cavidade. uma camada laminada acoplada ao segundo lado do substrato pode ser incluída. um furo pode ser perfurado, de uma só vez, através de camadas do dispositivo, através da pastilha e através da almofada condutora. o furo se estende através de e é definido dentro da camada laminada (se presente), do segundo lado do substrato, da pastilha e da almofada condutora. um material condutor é fornecido dentro do furo e se estende entre e através da camada laminada (se fornecida), do segundo lado do substrato, da pastilha e da almofada condutora.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/074,750 US10325855B2 (en) | 2016-03-18 | 2016-03-18 | Backside drill embedded die substrate |
US15/074,750 | 2016-03-18 | ||
PCT/US2017/022829 WO2017161199A1 (en) | 2016-03-18 | 2017-03-16 | Backside drill embedded die substrate |
Publications (2)
Publication Number | Publication Date |
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BR112018068970A2 true BR112018068970A2 (pt) | 2019-03-06 |
BR112018068970B1 BR112018068970B1 (pt) | 2023-01-31 |
Family
ID=58455674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112018068970-0A BR112018068970B1 (pt) | 2016-03-18 | 2017-03-16 | Dispositivo e método para fabricação de um substrato de pastilha embutida |
Country Status (9)
Country | Link |
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US (1) | US10325855B2 (pt) |
EP (1) | EP3430644B1 (pt) |
JP (1) | JP6679748B2 (pt) |
KR (1) | KR102213034B1 (pt) |
CN (1) | CN109075154B (pt) |
BR (1) | BR112018068970B1 (pt) |
ES (1) | ES2821728T3 (pt) |
TW (1) | TWI692048B (pt) |
WO (1) | WO2017161199A1 (pt) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US10373893B2 (en) | 2017-06-30 | 2019-08-06 | Intel Corporation | Embedded bridge with through-silicon vias |
US10504865B2 (en) * | 2017-09-28 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method of manufacturing the same |
EP3688798A4 (en) * | 2017-09-29 | 2021-05-19 | INTEL Corporation | SEMI-CONDUCTOR ENCLOSURE WITH EMBEDDED CONNECTIONS |
EP3732719A4 (en) * | 2017-12-29 | 2021-11-17 | Intel Corporation | MICROELECTRONIC ARRANGEMENTS |
TWI733056B (zh) * | 2018-09-19 | 2021-07-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
US11342243B2 (en) * | 2018-09-25 | 2022-05-24 | Intel Corporation | Thermal management solutions for embedded integrated circuit devices |
US11322428B2 (en) * | 2019-12-02 | 2022-05-03 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
KR20210072940A (ko) * | 2019-12-10 | 2021-06-18 | 삼성전기주식회사 | 전자부품 내장기판 |
US11289404B2 (en) * | 2020-01-17 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
TW202201673A (zh) * | 2020-03-17 | 2022-01-01 | 新加坡商安靠科技新加坡控股私人有限公司 | 半導體裝置和製造半導體裝置的方法 |
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-
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- 2017-03-16 CN CN201780029547.6A patent/CN109075154B/zh active Active
- 2017-03-16 EP EP17714617.2A patent/EP3430644B1/en active Active
- 2017-03-16 BR BR112018068970-0A patent/BR112018068970B1/pt active IP Right Grant
- 2017-03-16 ES ES17714617T patent/ES2821728T3/es active Active
- 2017-03-16 JP JP2018549181A patent/JP6679748B2/ja active Active
- 2017-03-16 KR KR1020187029732A patent/KR102213034B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
KR20180124932A (ko) | 2018-11-21 |
WO2017161199A1 (en) | 2017-09-21 |
TW201737394A (zh) | 2017-10-16 |
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JP2019511120A (ja) | 2019-04-18 |
TWI692048B (zh) | 2020-04-21 |
US20170271266A1 (en) | 2017-09-21 |
CN109075154B (zh) | 2022-06-03 |
ES2821728T3 (es) | 2021-04-27 |
JP6679748B2 (ja) | 2020-04-15 |
US10325855B2 (en) | 2019-06-18 |
EP3430644B1 (en) | 2020-07-01 |
BR112018068970B1 (pt) | 2023-01-31 |
EP3430644A1 (en) | 2019-01-23 |
CN109075154A (zh) | 2018-12-21 |
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