BR112013021814A2 - composição inorgânica para transferir uma estrutura de micro-relevo - Google Patents
composição inorgânica para transferir uma estrutura de micro-relevoInfo
- Publication number
- BR112013021814A2 BR112013021814A2 BR112013021814A BR112013021814A BR112013021814A2 BR 112013021814 A2 BR112013021814 A2 BR 112013021814A2 BR 112013021814 A BR112013021814 A BR 112013021814A BR 112013021814 A BR112013021814 A BR 112013021814A BR 112013021814 A2 BR112013021814 A2 BR 112013021814A2
- Authority
- BR
- Brazil
- Prior art keywords
- metal
- micro
- composition
- inorganic composition
- transfer
- Prior art date
Links
- 239000002184 metal Substances 0.000 abstract 11
- 150000004703 alkoxides Chemical class 0.000 abstract 6
- 238000004049 embossing Methods 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D143/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium, or a metal; Coating compositions based on derivatives of such polymers
- C09D143/04—Homopolymers or copolymers of monomers containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/56—Boron-containing linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/58—Metal-containing linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
- C08K5/057—Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/55—Boron-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D185/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon; Coating compositions based on derivatives of such polymers
- C09D185/04—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon; Coating compositions based on derivatives of such polymers containing boron
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/107—Porous materials, e.g. for reducing the refractive index
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Sustainable Development (AREA)
- Optics & Photonics (AREA)
- Sustainable Energy (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Silicon Polymers (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Laminated Bodies (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
composição inorgânica para transferir uma estrutura de micro-relevo a presente invenção provê uma composição inorgânica para transferir um a estrutura de micro-relevo, pela qual é possível criar, empregando uma etapa de transferência apropriada, uma estrutura de micro-relevo configurada a partir de uma substância inorgânica da qual o índice refrativo pode ser ajustado. esta composição contém um composto de silicone e pelo menos dois tipos de alcóxidos de metal, em que os alcóxidos de metal são um alcóxido de metal tendo um metal si e um alcóxido de metal tendo um metal m1 (m1 sendo pelo menos um elemento de metal selecionado dentre ti, zr,zn, sn, b, in, e a1). na composição, a razão entre a concentração molar (c^m^^1^) do alcóxido de metal tendo um metal m1 e a concentração molar (c^s^^i^) do alcóxido de metal tendo um metal si atende à seguinte fórmula (1): 0,2<243> c^m^^1^/c^s^^i^<243> 24.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011137604 | 2011-06-21 | ||
JP2011137719 | 2011-06-21 | ||
JP2011137449 | 2011-06-21 | ||
PCT/JP2012/065456 WO2012176716A1 (ja) | 2011-06-21 | 2012-06-18 | 微細凹凸構造転写用無機組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112013021814A2 true BR112013021814A2 (pt) | 2016-10-18 |
Family
ID=47422553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013021814A BR112013021814A2 (pt) | 2011-06-21 | 2012-06-18 | composição inorgânica para transferir uma estrutura de micro-relevo |
Country Status (9)
Country | Link |
---|---|
US (1) | US10184064B2 (pt) |
EP (2) | EP2657299A4 (pt) |
JP (1) | JP5277357B2 (pt) |
KR (1) | KR101286438B1 (pt) |
CN (2) | CN103154143B (pt) |
BR (1) | BR112013021814A2 (pt) |
MY (1) | MY162189A (pt) |
TW (1) | TWI432523B (pt) |
WO (1) | WO2012176716A1 (pt) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140314898A1 (en) | 2011-11-22 | 2014-10-23 | Asahi Kasei E-Materials Corporation | Heat-reactive resist material, mold manufacturing method, mold, development method and pattern formation material |
KR101881200B1 (ko) * | 2012-05-08 | 2018-07-24 | 아사히 가세이 가부시키가이샤 | 전사 방법 및 열 나노임프린트 장치 |
US20140242343A1 (en) * | 2013-02-27 | 2014-08-28 | 3M Innovative Properties Company | Lamination transfer films for forming embedded nanostructures |
JP6175898B2 (ja) * | 2013-05-22 | 2017-08-09 | セイコーエプソン株式会社 | 回折光学素子、回折光学素子の製造方法、及び電子機器 |
EP3004950A1 (en) * | 2013-06-04 | 2016-04-13 | Danmarks Tekniske Universitet | An optical device capable of providing a structural color, and a corresponding method of manufacturing such a device |
KR101843678B1 (ko) * | 2014-04-25 | 2018-03-29 | 아사히 가세이 가부시키가이샤 | 기능 전사체 및 기능 전사 필름 롤 |
US10008483B2 (en) * | 2016-04-05 | 2018-06-26 | X-Celeprint Limited | Micro-transfer printed LED and color filter structure |
JP6625111B2 (ja) * | 2016-12-19 | 2019-12-25 | キヤノン株式会社 | 電子写真用ベルトおよび電子写真画像形成装置 |
CN114077000B (zh) * | 2020-08-13 | 2024-08-16 | 苏州维旺科技有限公司 | 扩散片及其制备方法和背光模组 |
CN113325503A (zh) * | 2021-05-31 | 2021-08-31 | 江西欧迈斯微电子有限公司 | 衍射光学元件及光学设备 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04275950A (ja) * | 1991-03-04 | 1992-10-01 | Central Glass Co Ltd | 基板面への微細凹凸形成法 |
JP2538527B2 (ja) | 1992-09-21 | 1996-09-25 | 敏倫 森実 | 金属酸化物ガラスの膜および球体微粒子の製造方法 |
EP0973070B1 (en) * | 1998-07-17 | 2007-03-21 | Toda Kogyo Corporation | Magnetic particles and magnetic carrier for electrophotographic developer |
JP3473014B2 (ja) | 1998-07-17 | 2003-12-02 | 戸田工業株式会社 | 電子写真現像剤用磁性キャリア |
JP2000144116A (ja) | 1998-11-10 | 2000-05-26 | Central Glass Co Ltd | 超撥水性被膜 |
CN1457293A (zh) * | 2001-02-28 | 2003-11-19 | 日本板硝子株式会社 | 具有规定表面形状的物品及其制造方法 |
JP2002338304A (ja) | 2001-02-28 | 2002-11-27 | Nippon Sheet Glass Co Ltd | 所定表面形状を有する物品の製造方法 |
JPWO2005121019A1 (ja) | 2004-06-08 | 2008-04-10 | 独立行政法人理化学研究所 | ナノ構造体の製造方法およびナノ構造体 |
US20080003373A1 (en) | 2005-05-11 | 2008-01-03 | Yazaki Corporation | Antireflective coating compositions and methods for depositing such coatings |
JP4699140B2 (ja) | 2005-08-29 | 2011-06-08 | 東京応化工業株式会社 | パターン形成方法 |
JP4978188B2 (ja) | 2006-12-28 | 2012-07-18 | 旭硝子株式会社 | 微細構造体の製造方法 |
JP5189772B2 (ja) * | 2007-02-09 | 2013-04-24 | 昭和電工株式会社 | 微細パターン転写材料 |
JP5015663B2 (ja) | 2007-05-31 | 2012-08-29 | 旭化成イーマテリアルズ株式会社 | インプリント用感光性樹脂積層体 |
JP5128577B2 (ja) | 2009-12-28 | 2013-01-23 | 大阪瓦斯株式会社 | ガス検出装置及びそのガス検出装置を備えた機器 |
JP2011137604A (ja) | 2009-12-28 | 2011-07-14 | Daikin Industries Ltd | 温水制御ユニット |
US8425180B2 (en) | 2009-12-31 | 2013-04-23 | General Electric Company | Systems and apparatus relating to steam turbine operation |
MY164197A (en) * | 2010-12-09 | 2017-11-30 | Asahi Kasei E-Materials Corp | Fine-structure laminate, method for preparing fine-structure laminate, and production method for fine-structure laminate |
-
2012
- 2012-06-18 CN CN201280003308.0A patent/CN103154143B/zh not_active Expired - Fee Related
- 2012-06-18 KR KR1020137008409A patent/KR101286438B1/ko active IP Right Grant
- 2012-06-18 TW TW101121832A patent/TWI432523B/zh not_active IP Right Cessation
- 2012-06-18 JP JP2013506371A patent/JP5277357B2/ja not_active Expired - Fee Related
- 2012-06-18 US US13/983,726 patent/US10184064B2/en not_active Expired - Fee Related
- 2012-06-18 WO PCT/JP2012/065456 patent/WO2012176716A1/ja active Application Filing
- 2012-06-18 CN CN201410318108.5A patent/CN104155847A/zh active Pending
- 2012-06-18 BR BR112013021814A patent/BR112013021814A2/pt not_active Application Discontinuation
- 2012-06-18 EP EP12802248.0A patent/EP2657299A4/en not_active Withdrawn
- 2012-06-18 MY MYPI2013002835A patent/MY162189A/en unknown
- 2012-06-18 EP EP14176601.4A patent/EP2808362A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW201307481A (zh) | 2013-02-16 |
US10184064B2 (en) | 2019-01-22 |
CN103154143A (zh) | 2013-06-12 |
KR20130069786A (ko) | 2013-06-26 |
EP2657299A4 (en) | 2014-03-12 |
CN104155847A (zh) | 2014-11-19 |
WO2012176716A1 (ja) | 2012-12-27 |
JP5277357B2 (ja) | 2013-08-28 |
MY162189A (en) | 2017-05-31 |
EP2808362A1 (en) | 2014-12-03 |
TWI432523B (zh) | 2014-04-01 |
KR101286438B1 (ko) | 2013-07-19 |
EP2657299A1 (en) | 2013-10-30 |
CN103154143B (zh) | 2015-01-14 |
JPWO2012176716A1 (ja) | 2015-02-23 |
US20140128542A1 (en) | 2014-05-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B25A | Requested transfer of rights approved |
Owner name: ASAHI KASEI E-MATERIALS CORPORATION (JP) |
|
B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B11B | Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements |