BR112013000116A2 - mecanismo de transporte de substrato contatando um único lado de um substrato de tela flexível para deposição de filme fino de rolo para rolo - Google Patents
mecanismo de transporte de substrato contatando um único lado de um substrato de tela flexível para deposição de filme fino de rolo para roloInfo
- Publication number
- BR112013000116A2 BR112013000116A2 BR112013000116A BR112013000116A BR112013000116A2 BR 112013000116 A2 BR112013000116 A2 BR 112013000116A2 BR 112013000116 A BR112013000116 A BR 112013000116A BR 112013000116 A BR112013000116 A BR 112013000116A BR 112013000116 A2 BR112013000116 A2 BR 112013000116A2
- Authority
- BR
- Brazil
- Prior art keywords
- substrate
- roll
- thin film
- transport mechanism
- contacting
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
Abstract
mecanismo de transporte de substrato contatando um único lado de um substrato de tela flexível para deposição de filme fino de rolo para rolo. sistemas (100, 200, 300, 400) e métodos para deposição de um filme fino em um substrato flexível (106, 206,306,406) envolve a orientação do substrato flexível ao longo de um percurso de transporte em espiral para trás e para frente entre primeira e segunda zonas de precursor espaçadas (110,112, 210,212, 310 ,312, 410, 412), de modo que o substrato transite através das primeira e segunda zonas de precursor múltiplas vezes e cada vez através de uma zona de isolamento intermediária (116, 216, 316, 416) sem contatar mecanicamente uma superfície externa (182, 382) do substrato com um mecanismo de transporte de substrato (166, 168, 170, 266, 270, 274, 276, 366, 370, 466, 470) inibindo, dessa forma, os danos mecânicos ao filme fino depositado na superfície externa, que pode aperfeiçoar o desempenho de camada protetora do filme fino.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36692710P | 2010-07-23 | 2010-07-23 | |
PCT/US2011/045049 WO2012012744A2 (en) | 2010-07-23 | 2011-07-22 | Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112013000116A2 true BR112013000116A2 (pt) | 2016-05-24 |
Family
ID=45493837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013000116A BR112013000116A2 (pt) | 2010-07-23 | 2011-07-22 | mecanismo de transporte de substrato contatando um único lado de um substrato de tela flexível para deposição de filme fino de rolo para rolo |
Country Status (8)
Country | Link |
---|---|
US (1) | US9297076B2 (pt) |
EP (1) | EP2596146B1 (pt) |
JP (1) | JP5828895B2 (pt) |
KR (1) | KR101791033B1 (pt) |
CN (1) | CN103119198B (pt) |
BR (1) | BR112013000116A2 (pt) |
ES (1) | ES2617956T3 (pt) |
WO (1) | WO2012012744A2 (pt) |
Families Citing this family (13)
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TWI501873B (zh) | 2011-12-27 | 2015-10-01 | Nitto Denko Corp | Transparent gas barrier film, transparent gas barrier film manufacturing method, organic EL element, solar cell and thin film battery |
RU2600462C2 (ru) * | 2012-06-15 | 2016-10-20 | Пикосан Ой | Покрытие полотна подложки осаждением атомных слоев |
EP2930255B1 (en) * | 2012-11-30 | 2018-09-12 | LG Chem, Ltd. | Film formation apparatus |
CN103966572A (zh) * | 2013-02-05 | 2014-08-06 | 王东君 | 卷对卷式原子层沉积设备及其使用方法 |
JP2014154361A (ja) * | 2013-02-08 | 2014-08-25 | Nitto Denko Corp | 透明ガスバリアフィルムの製造方法、透明ガスバリアフィルムの製造装置、及び有機エレクトロルミネッセンスデバイス |
US9435028B2 (en) * | 2013-05-06 | 2016-09-06 | Lotus Applied Technology, Llc | Plasma generation for thin film deposition on flexible substrates |
EP3022331A4 (en) | 2013-07-16 | 2017-01-04 | 3M Innovative Properties Company | Roll processing of film |
US9556514B2 (en) | 2014-02-06 | 2017-01-31 | Veeco Ald Inc. | Spatial deposition of material using short-distance reciprocating motions |
US9133546B1 (en) * | 2014-03-05 | 2015-09-15 | Lotus Applied Technology, Llc | Electrically- and chemically-active adlayers for plasma electrodes |
CN104152844A (zh) * | 2014-08-11 | 2014-11-19 | 江南石墨烯研究院 | 一种在真空中搭载衬底的方式 |
CN107210199A (zh) * | 2014-10-17 | 2017-09-26 | 路特斯应用技术有限责任公司 | 高速沉积混合氧化物阻挡膜 |
KR101834171B1 (ko) * | 2016-08-29 | 2018-03-05 | 에스에프씨주식회사 | 유기 박막 제조공정의 증착공정 평가 장치 |
DE102019007935B4 (de) * | 2019-11-14 | 2023-06-29 | Elfolion Gmbh | Verfahren zum Bearbeiten flexibler Substrate und Vakuumbearbeitungsanlage zur Umsetzung des Verfahrens |
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2011
- 2011-07-22 KR KR1020137001703A patent/KR101791033B1/ko active IP Right Grant
- 2011-07-22 JP JP2013520887A patent/JP5828895B2/ja active Active
- 2011-07-22 CN CN201180035854.8A patent/CN103119198B/zh active Active
- 2011-07-22 ES ES11810477.7T patent/ES2617956T3/es active Active
- 2011-07-22 WO PCT/US2011/045049 patent/WO2012012744A2/en active Application Filing
- 2011-07-22 EP EP11810477.7A patent/EP2596146B1/en active Active
- 2011-07-22 BR BR112013000116A patent/BR112013000116A2/pt not_active IP Right Cessation
- 2011-07-22 US US13/189,018 patent/US9297076B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120021128A1 (en) | 2012-01-26 |
US9297076B2 (en) | 2016-03-29 |
CN103119198B (zh) | 2015-08-19 |
ES2617956T3 (es) | 2017-06-20 |
WO2012012744A2 (en) | 2012-01-26 |
EP2596146B1 (en) | 2017-02-22 |
JP2013535575A (ja) | 2013-09-12 |
KR20130043163A (ko) | 2013-04-29 |
EP2596146A2 (en) | 2013-05-29 |
KR101791033B1 (ko) | 2017-10-27 |
WO2012012744A3 (en) | 2012-04-12 |
CN103119198A (zh) | 2013-05-22 |
JP5828895B2 (ja) | 2015-12-09 |
EP2596146A4 (en) | 2016-06-22 |
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Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2524 DE 21-05-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |