BR112015024056A2 - estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico - Google Patents
estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaicoInfo
- Publication number
- BR112015024056A2 BR112015024056A2 BR112015024056A BR112015024056A BR112015024056A2 BR 112015024056 A2 BR112015024056 A2 BR 112015024056A2 BR 112015024056 A BR112015024056 A BR 112015024056A BR 112015024056 A BR112015024056 A BR 112015024056A BR 112015024056 A2 BR112015024056 A2 BR 112015024056A2
- Authority
- BR
- Brazil
- Prior art keywords
- layer
- photovoltaic device
- manufacturing
- photovoltaic
- copper
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 230000002745 absorbent Effects 0.000 abstract 2
- 239000002250 absorbent Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000224 chemical solution deposition Methods 0.000 abstract 1
- VSHVHZBQWNXZHX-UHFFFAOYSA-N copper;tellurous acid Chemical compound [Cu+2].O[Te](O)=O VSHVHZBQWNXZHX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
resumo estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico um dispositivo fotovoltaico inclui um substrato, um óxido condutor transparente, uma camada de janela de tipo n, uma camada absorvente de tipo p e uma camada refletora de elétrons. a camada refletora de elétrons pode incluir telureto de zinco dopado com telureto de cobre, liga de telureto de zinco com telureto de cobre ou uma bicamada de múltiplas camadas contendo zinco, cobre, cádmio e telúrio em várias composições. um processo para fabricar um dispositivo fotovoltaico inclui formar uma camada sobre um substrato por pelo menos uma pulverização catódica, evaporação, deposição, cvd, processo de deposição de banho químico e processo de deposição de transporte de vapor. o processo inclui formar uma camada refletora de elétrons sobre uma camada absorvente de tipo p. 1/1
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361804469P | 2013-03-22 | 2013-03-22 | |
PCT/US2014/031290 WO2014153439A1 (en) | 2013-03-22 | 2014-03-20 | Photovoltaic device including a back contact and method of manufacturing |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112015024056A2 true BR112015024056A2 (pt) | 2017-07-18 |
Family
ID=51568559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112015024056A BR112015024056A2 (pt) | 2013-03-22 | 2014-03-20 | estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico |
Country Status (4)
Country | Link |
---|---|
US (2) | US9269849B2 (pt) |
EP (1) | EP2976783A4 (pt) |
BR (1) | BR112015024056A2 (pt) |
WO (1) | WO2014153439A1 (pt) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
EP2976783A4 (en) * | 2013-03-22 | 2016-11-30 | First Solar Inc | PHOTOVOLTAIC DEVICE COMPRISING A REAR CONTACT AND METHOD OF MANUFACTURE |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9818888B2 (en) * | 2015-03-12 | 2017-11-14 | Vitro, S.A.B. De C.V. | Article with buffer layer and method of making the same |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
EP3485516B1 (en) * | 2016-07-14 | 2021-09-01 | First Solar, Inc | Absorber structure for a solar cell |
US20190296174A1 (en) * | 2016-10-12 | 2019-09-26 | First Solar, Inc. | Photovoltaic device with transparent tunnel junction |
US11251385B2 (en) * | 2017-01-27 | 2022-02-15 | The University Of Toledo | Inexpensive, earth-abundant, tunable hole transport material for CdTe solar cells |
US10651781B2 (en) * | 2017-08-24 | 2020-05-12 | Corning Incorporated | Glass roof shingle |
US10672919B2 (en) * | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
US20220336687A1 (en) * | 2018-05-07 | 2022-10-20 | Colorado State University Research Foundation | Doping and passivation for high efficiency solar cells |
US11894802B2 (en) | 2021-06-16 | 2024-02-06 | Conti Innovation Center, Llc | Solar module racking system |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393675A (en) | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
US5909632A (en) | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
EP1972014A1 (de) | 2006-01-03 | 2008-09-24 | Basf Se | Photovoltaisch aktives halbleitermaterial und photovoltaische zelle |
GB0608987D0 (en) * | 2006-05-08 | 2006-06-14 | Univ Wales Bangor | Manufacture of CdTe photovoltaic cells using MOCVD |
KR20100125288A (ko) * | 2008-03-18 | 2010-11-30 | 솔렉슨트 코포레이션 | 박막 태양 전지의 개선된 후면 컨택 |
US8084682B2 (en) | 2009-01-21 | 2011-12-27 | Yung-Tin Chen | Multiple band gapped cadmium telluride photovoltaic devices and process for making the same |
US8187963B2 (en) * | 2010-05-24 | 2012-05-29 | EncoreSolar, Inc. | Method of forming back contact to a cadmium telluride solar cell |
US9559247B2 (en) * | 2010-09-22 | 2017-01-31 | First Solar, Inc. | Photovoltaic device containing an N-type dopant source |
US20120318352A1 (en) | 2011-06-14 | 2012-12-20 | General Electric Company | Photovoltaic device with reflection enhancing layer |
US9147793B2 (en) * | 2011-06-20 | 2015-09-29 | Alliance For Sustainable Energy, Llc | CdTe devices and method of manufacturing same |
US10026861B2 (en) * | 2011-10-17 | 2018-07-17 | First Solar, Inc. | Photovoltaic device and method of formation |
EP2976783A4 (en) * | 2013-03-22 | 2016-11-30 | First Solar Inc | PHOTOVOLTAIC DEVICE COMPRISING A REAR CONTACT AND METHOD OF MANUFACTURE |
-
2014
- 2014-03-20 EP EP14769780.9A patent/EP2976783A4/en not_active Withdrawn
- 2014-03-20 BR BR112015024056A patent/BR112015024056A2/pt not_active IP Right Cessation
- 2014-03-20 WO PCT/US2014/031290 patent/WO2014153439A1/en active Application Filing
- 2014-03-20 US US14/221,245 patent/US9269849B2/en active Active
-
2016
- 2016-01-11 US US14/992,304 patent/US9853177B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2976783A4 (en) | 2016-11-30 |
EP2976783A1 (en) | 2016-01-27 |
US9853177B2 (en) | 2017-12-26 |
US20160126397A1 (en) | 2016-05-05 |
US20140284750A1 (en) | 2014-09-25 |
US9269849B2 (en) | 2016-02-23 |
WO2014153439A1 (en) | 2014-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application fees: dismissal - article 86 of industrial property law | ||
B08K | Lapse as no evidence of payment of the annual fee has been furnished to inpi (acc. art. 87) |