BR112015024056A2 - estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico - Google Patents

estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico

Info

Publication number
BR112015024056A2
BR112015024056A2 BR112015024056A BR112015024056A BR112015024056A2 BR 112015024056 A2 BR112015024056 A2 BR 112015024056A2 BR 112015024056 A BR112015024056 A BR 112015024056A BR 112015024056 A BR112015024056 A BR 112015024056A BR 112015024056 A2 BR112015024056 A2 BR 112015024056A2
Authority
BR
Brazil
Prior art keywords
layer
photovoltaic device
manufacturing
photovoltaic
copper
Prior art date
Application number
BR112015024056A
Other languages
English (en)
Inventor
Khan Imran
Addepalli Pratima
Yu San
Palaniappagounder Veluchamy
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of BR112015024056A2 publication Critical patent/BR112015024056A2/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

resumo estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico um dispositivo fotovoltaico inclui um substrato, um óxido condutor transparente, uma camada de janela de tipo n, uma camada absorvente de tipo p e uma camada refletora de elétrons. a camada refletora de elétrons pode incluir telureto de zinco dopado com telureto de cobre, liga de telureto de zinco com telureto de cobre ou uma bicamada de múltiplas camadas contendo zinco, cobre, cádmio e telúrio em várias composições. um processo para fabricar um dispositivo fotovoltaico inclui formar uma camada sobre um substrato por pelo menos uma pulverização catódica, evaporação, deposição, cvd, processo de deposição de banho químico e processo de deposição de transporte de vapor. o processo inclui formar uma camada refletora de elétrons sobre uma camada absorvente de tipo p. 1/1
BR112015024056A 2013-03-22 2014-03-20 estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico BR112015024056A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361804469P 2013-03-22 2013-03-22
PCT/US2014/031290 WO2014153439A1 (en) 2013-03-22 2014-03-20 Photovoltaic device including a back contact and method of manufacturing

Publications (1)

Publication Number Publication Date
BR112015024056A2 true BR112015024056A2 (pt) 2017-07-18

Family

ID=51568559

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015024056A BR112015024056A2 (pt) 2013-03-22 2014-03-20 estrutura fotovoltaica e processo para fabricar um dispositivo fotovoltaico

Country Status (4)

Country Link
US (2) US9269849B2 (pt)
EP (1) EP2976783A4 (pt)
BR (1) BR112015024056A2 (pt)
WO (1) WO2014153439A1 (pt)

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WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US9269849B2 (en) * 2013-03-22 2016-02-23 First Solar, Inc. Photovoltaic device including a back contact and method of manufacturing
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US10672920B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with buffer layer
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
WO2018013641A1 (en) * 2016-07-14 2018-01-18 First Solar, Inc. Solar cells and methods of making the same
MY201253A (en) * 2016-10-12 2024-02-13 First Solar Inc Photovoltaic device with transparent tunnel junction
US11251385B2 (en) * 2017-01-27 2022-02-15 The University Of Toledo Inexpensive, earth-abundant, tunable hole transport material for CdTe solar cells
US10651781B2 (en) * 2017-08-24 2020-05-12 Corning Incorporated Glass roof shingle
US10672919B2 (en) * 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
US20220336687A1 (en) * 2018-05-07 2022-10-20 Colorado State University Research Foundation Doping and passivation for high efficiency solar cells
AU2022291777A1 (en) 2021-06-16 2024-01-18 Conti Innovation Center, Llc Mechanically stacked solar transmissive cells or modules

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393675A (en) 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5909632A (en) 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
CN101351894B (zh) 2006-01-03 2010-05-19 巴斯夫欧洲公司 光电有源半导体材料以及光电池
GB0608987D0 (en) * 2006-05-08 2006-06-14 Univ Wales Bangor Manufacture of CdTe photovoltaic cells using MOCVD
CN101978101B (zh) * 2008-03-18 2013-09-04 索莱克山特公司 薄膜太阳能电池中改进的背接触
US8084682B2 (en) 2009-01-21 2011-12-27 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
US8187963B2 (en) * 2010-05-24 2012-05-29 EncoreSolar, Inc. Method of forming back contact to a cadmium telluride solar cell
WO2012040013A2 (en) * 2010-09-22 2012-03-29 First Solar, Inc. Photovoltaic device containing an n-type dopant source
US20120318352A1 (en) 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer
US9147793B2 (en) * 2011-06-20 2015-09-29 Alliance For Sustainable Energy, Llc CdTe devices and method of manufacturing same
US10026861B2 (en) * 2011-10-17 2018-07-17 First Solar, Inc. Photovoltaic device and method of formation
US9269849B2 (en) * 2013-03-22 2016-02-23 First Solar, Inc. Photovoltaic device including a back contact and method of manufacturing

Also Published As

Publication number Publication date
EP2976783A4 (en) 2016-11-30
US9853177B2 (en) 2017-12-26
US9269849B2 (en) 2016-02-23
US20160126397A1 (en) 2016-05-05
WO2014153439A1 (en) 2014-09-25
EP2976783A1 (en) 2016-01-27
US20140284750A1 (en) 2014-09-25

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B08F Application fees: dismissal - article 86 of industrial property law
B08K Lapse as no evidence of payment of the annual fee has been furnished to inpi (acc. art. 87)