EA201290380A1 - Тонкопленочный фотогальванический элемент, способ его изготовления и его использование - Google Patents

Тонкопленочный фотогальванический элемент, способ его изготовления и его использование

Info

Publication number
EA201290380A1
EA201290380A1 EA201290380A EA201290380A EA201290380A1 EA 201290380 A1 EA201290380 A1 EA 201290380A1 EA 201290380 A EA201290380 A EA 201290380A EA 201290380 A EA201290380 A EA 201290380A EA 201290380 A1 EA201290380 A1 EA 201290380A1
Authority
EA
Eurasian Patent Office
Prior art keywords
thin
type semiconductor
film
photogalvanic
manufacture
Prior art date
Application number
EA201290380A
Other languages
English (en)
Inventor
Ярмо Скарп
Original Assignee
Бенек Ой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Бенек Ой filed Critical Бенек Ой
Publication of EA201290380A1 publication Critical patent/EA201290380A1/ru

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Тонкопленочный фотогальванический элемент (10), включающий оконный слой (40) из полупроводника n-типа, поглощающий слой (5) из полупроводника p-типа и р-n-переход (6) на поверхности раздела между этими двумя слоями, в котором поглощающий слой из полупроводника р-типа сформирован из теллурида кадмия CdTe. Согласно настоящему изобретению оконный слой (40) из полупроводника n-типа включает оксид/сульфид цинка Zn(O,S).
EA201290380A 2009-12-22 2010-12-22 Тонкопленочный фотогальванический элемент, способ его изготовления и его использование EA201290380A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20096380A FI20096380A0 (fi) 2009-12-22 2009-12-22 Ohutkalvoaurinkokenno, valmistusmenetelmä ja käyttö
PCT/FI2010/051072 WO2011077008A2 (en) 2009-12-22 2010-12-22 A thin film photovoltaic cell, a method for manufacturing, and use

Publications (1)

Publication Number Publication Date
EA201290380A1 true EA201290380A1 (ru) 2013-01-30

Family

ID=41462838

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201290380A EA201290380A1 (ru) 2009-12-22 2010-12-22 Тонкопленочный фотогальванический элемент, способ его изготовления и его использование

Country Status (7)

Country Link
US (1) US20130000726A1 (ru)
EP (1) EP2517269B1 (ru)
CN (1) CN102742033B (ru)
EA (1) EA201290380A1 (ru)
FI (1) FI20096380A0 (ru)
TW (1) TW201123491A (ru)
WO (1) WO2011077008A2 (ru)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
EP2954562A2 (en) 2013-02-07 2015-12-16 First Solar, Inc Photovoltaic device with protective layer over a window layer and method of manufacture of the same
WO2014151514A1 (en) * 2013-03-15 2014-09-25 First Solar, Inc. Photovoltaic device with a zinc oxide layer and method of formation
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
CN104022189B (zh) * 2014-06-23 2016-07-06 山东建筑大学 一种制备ZnO/ZnS复合光电薄膜的方法
US10433014B2 (en) * 2014-10-28 2019-10-01 Hewlett Packard Enterprise Development Lp Media content download time
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
CN109030578A (zh) * 2018-07-30 2018-12-18 清华大学 一种基于CdTe/ZnO纳米异质结结构的NO2气敏传感器的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
SE0301350D0 (sv) * 2003-05-08 2003-05-08 Forskarpatent I Uppsala Ab A thin-film solar cell
CN100590893C (zh) * 2005-12-28 2010-02-17 中国科学院大连化学物理研究所 一种用于光伏电池的ⅱ-ⅵ族半导体薄膜的制备方法
JP2010087105A (ja) * 2008-09-30 2010-04-15 Fujifilm Corp 太陽電池

Also Published As

Publication number Publication date
WO2011077008A2 (en) 2011-06-30
EP2517269A2 (en) 2012-10-31
EP2517269B1 (en) 2016-03-09
CN102742033B (zh) 2015-02-25
WO2011077008A3 (en) 2011-11-17
FI20096380A0 (fi) 2009-12-22
TW201123491A (en) 2011-07-01
US20130000726A1 (en) 2013-01-03
CN102742033A (zh) 2012-10-17

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