BR112012019898A2 - método para fabricar um transistor - Google Patents
método para fabricar um transistorInfo
- Publication number
- BR112012019898A2 BR112012019898A2 BR112012019898A BR112012019898A BR112012019898A2 BR 112012019898 A2 BR112012019898 A2 BR 112012019898A2 BR 112012019898 A BR112012019898 A BR 112012019898A BR 112012019898 A BR112012019898 A BR 112012019898A BR 112012019898 A2 BR112012019898 A2 BR 112012019898A2
- Authority
- BR
- Brazil
- Prior art keywords
- layer
- electrically insulating
- electrically conductive
- insulating material
- conductive material
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000012777 electrically insulating material Substances 0.000 abstract 6
- 239000004020 conductor Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 5
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011253 protective coating Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/713,252 US7923313B1 (en) | 2010-02-26 | 2010-02-26 | Method of making transistor including reentrant profile |
| PCT/US2011/025795 WO2011106337A1 (en) | 2010-02-26 | 2011-02-23 | Methods of making transistor including reentrant profile |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112012019898A2 true BR112012019898A2 (pt) | 2016-05-03 |
Family
ID=43837090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112012019898A BR112012019898A2 (pt) | 2010-02-26 | 2011-02-23 | método para fabricar um transistor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7923313B1 (enExample) |
| EP (1) | EP2539925A1 (enExample) |
| JP (1) | JP2013520844A (enExample) |
| KR (1) | KR20120116510A (enExample) |
| CN (1) | CN102770948A (enExample) |
| BR (1) | BR112012019898A2 (enExample) |
| WO (1) | WO2011106337A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7573420B2 (en) * | 2007-05-14 | 2009-08-11 | Infineon Technologies Ag | RF front-end for a radar system |
| US8492769B2 (en) * | 2011-01-07 | 2013-07-23 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
| US8383469B2 (en) * | 2011-01-07 | 2013-02-26 | Eastman Kodak Company | Producing transistor including reduced channel length |
| US8847232B2 (en) * | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including reduced channel length |
| US8409937B2 (en) * | 2011-01-07 | 2013-04-02 | Eastman Kodak Company | Producing transistor including multi-layer reentrant profile |
| EP2661776A2 (en) * | 2011-01-07 | 2013-11-13 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
| CN102760690B (zh) * | 2011-04-29 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法和晶片 |
| US8592909B2 (en) | 2011-08-26 | 2013-11-26 | Eastman Kodak Company | Transistor including single layer reentrant profile |
| US8637355B2 (en) | 2011-08-26 | 2014-01-28 | Eastman Kodak Company | Actuating transistor including single layer reentrant profile |
| US8617942B2 (en) | 2011-08-26 | 2013-12-31 | Eastman Kodak Company | Producing transistor including single layer reentrant profile |
| US8803227B2 (en) | 2011-09-29 | 2014-08-12 | Eastman Kodak Company | Vertical transistor having reduced parasitic capacitance |
| US8865576B2 (en) | 2011-09-29 | 2014-10-21 | Eastman Kodak Company | Producing vertical transistor having reduced parasitic capacitance |
| US8633068B2 (en) | 2012-02-22 | 2014-01-21 | Eastman Kodak Company | Vertical transistor actuation |
| US8698230B2 (en) | 2012-02-22 | 2014-04-15 | Eastman Kodak Company | Circuit including vertical transistors with a conductive stack having reentrant profile |
| US20140374762A1 (en) * | 2013-06-19 | 2014-12-25 | Lee W. Tutt | Circuit including four terminal transistor |
| US20140374806A1 (en) * | 2013-06-19 | 2014-12-25 | Lee W. Tutt | Four terminal transistor |
| CN105453297B (zh) * | 2013-09-30 | 2018-04-06 | 乐金显示有限公司 | 层压体及其制造方法 |
| WO2015134082A1 (en) * | 2014-03-06 | 2015-09-11 | Eastman Kodak Company | Vtft with polymer core |
| US20150257283A1 (en) * | 2014-03-06 | 2015-09-10 | Carolyn Rae Ellinger | Forming vertically spaced electrodes |
| WO2021226419A1 (en) * | 2020-05-07 | 2021-11-11 | Alliance For Sustainable Energy, Llc | Crosslinking of loose insulating powders |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63170971A (ja) | 1987-01-09 | 1988-07-14 | Nec Corp | 半導体装置 |
| DE3855889T2 (de) | 1987-12-02 | 1997-08-07 | Advanced Micro Devices Inc | Ein verfahren zur herstellung selbstausrichtender halbleiteranordnungen |
| JPH02140863U (enExample) * | 1989-04-26 | 1990-11-26 | ||
| JPH05144744A (ja) | 1991-11-18 | 1993-06-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体薄膜形成方法 |
| KR970007965B1 (en) * | 1994-05-12 | 1997-05-19 | Lg Semicon Co Ltd | Structure and fabrication method of tft |
| KR0132490B1 (ko) * | 1994-07-21 | 1998-04-16 | 문정환 | 박막트랜지스터 제조방법 |
| JPH08153878A (ja) * | 1994-11-29 | 1996-06-11 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
| US5641694A (en) | 1994-12-22 | 1997-06-24 | International Business Machines Corporation | Method of fabricating vertical epitaxial SOI transistor |
| KR0165398B1 (ko) * | 1995-05-26 | 1998-12-15 | 윤종용 | 버티칼 트랜지스터의 제조방법 |
| US5780911A (en) * | 1995-11-29 | 1998-07-14 | Lg Semicon Co., Ltd. | Thin film transistor and method for fabricating the same |
| GB0024294D0 (en) | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
| DE10234735A1 (de) | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verfahren zum vertikalen Strukturieren von Substraten in der Halbleiterprozesstechnik mittels inkonformer Abscheidung |
| JP3983222B2 (ja) | 2004-01-13 | 2007-09-26 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| US7629633B2 (en) | 2004-05-20 | 2009-12-08 | Isaac Wing Tak Chan | Vertical thin film transistor with short-channel effect suppression |
| US6972461B1 (en) | 2004-06-30 | 2005-12-06 | International Business Machines Corporation | Channel MOSFET with strained silicon channel on strained SiGe |
| CN100490180C (zh) | 2004-10-04 | 2009-05-20 | 松下电器产业株式会社 | 纵向场效应晶体管及其制造方法 |
| US7141727B1 (en) * | 2005-05-16 | 2006-11-28 | International Business Machines Corporation | Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics |
| TWI278068B (en) | 2005-11-03 | 2007-04-01 | Nanya Technology Corp | Growth controlled vertical transistor |
| US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
| US7413982B2 (en) | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
| JP2007284766A (ja) | 2006-04-19 | 2007-11-01 | Shimadzu Corp | 縦型プラズマｃｖｄ装置 |
| US7410856B2 (en) | 2006-09-14 | 2008-08-12 | Micron Technology, Inc. | Methods of forming vertical transistors |
| JP2008103636A (ja) | 2006-10-20 | 2008-05-01 | Sumitomo Electric Ind Ltd | 縦型トランジスタ、および縦型トランジスタを作製する方法 |
| JP2008160004A (ja) | 2006-12-26 | 2008-07-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| US7789961B2 (en) | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US11136667B2 (en) | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| JP2008277375A (ja) * | 2007-04-26 | 2008-11-13 | Sanyo Electric Co Ltd | 電界効果トランジスタ及びその製造方法 |
| US20090001470A1 (en) | 2007-06-26 | 2009-01-01 | Anderson Brent A | Method for forming acute-angle spacer for non-orthogonal finfet and the resulting structure |
| KR100896631B1 (ko) | 2007-08-13 | 2009-05-08 | 성균관대학교산학협력단 | 수직 실린더형 트랜지스터의 제조방법 및 이에 의해 제조된수직 실린더형 트랜지스터 |
| KR100889607B1 (ko) | 2007-08-13 | 2009-03-20 | 성균관대학교산학협력단 | 더미 드레인층을 이용한 수직 실린더형 트랜지스터의제조방법 및 이에 의해 제조된 수직 실린더형 트랜지스터 |
| KR100960928B1 (ko) | 2008-01-02 | 2010-06-07 | 주식회사 하이닉스반도체 | 수직형 트랜지스터 및 그의 형성방법 |
| JP2010040580A (ja) * | 2008-07-31 | 2010-02-18 | Sanyo Electric Co Ltd | 有機薄膜デバイスの製造方法及び有機薄膜デバイス |
-
2010
- 2010-02-26 US US12/713,252 patent/US7923313B1/en not_active Expired - Fee Related
-
2011
- 2011-02-23 KR KR1020127025076A patent/KR20120116510A/ko not_active Withdrawn
- 2011-02-23 EP EP11706444A patent/EP2539925A1/en not_active Withdrawn
- 2011-02-23 BR BR112012019898A patent/BR112012019898A2/pt not_active IP Right Cessation
- 2011-02-23 CN CN2011800109899A patent/CN102770948A/zh active Pending
- 2011-02-23 JP JP2012555086A patent/JP2013520844A/ja active Pending
- 2011-02-23 WO PCT/US2011/025795 patent/WO2011106337A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US7923313B1 (en) | 2011-04-12 |
| JP2013520844A (ja) | 2013-06-06 |
| EP2539925A1 (en) | 2013-01-02 |
| CN102770948A (zh) | 2012-11-07 |
| WO2011106337A1 (en) | 2011-09-01 |
| KR20120116510A (ko) | 2012-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 6A ANUIDADE. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |