KR20120116510A - 재진입 프로파일을 포함하는 트랜지스터의 제조 방법 - Google Patents

재진입 프로파일을 포함하는 트랜지스터의 제조 방법 Download PDF

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Publication number
KR20120116510A
KR20120116510A KR1020127025076A KR20127025076A KR20120116510A KR 20120116510 A KR20120116510 A KR 20120116510A KR 1020127025076 A KR1020127025076 A KR 1020127025076A KR 20127025076 A KR20127025076 A KR 20127025076A KR 20120116510 A KR20120116510 A KR 20120116510A
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KR
South Korea
Prior art keywords
layer
material layer
substrate
electrically insulating
insulating material
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KR1020127025076A
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English (en)
Korean (ko)
Inventor
리 윌리엄 터트
쉘비 포레스터 넬슨
Original Assignee
이스트맨 코닥 캄파니
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Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20120116510A publication Critical patent/KR20120116510A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
KR1020127025076A 2010-02-26 2011-02-23 재진입 프로파일을 포함하는 트랜지스터의 제조 방법 Withdrawn KR20120116510A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/713,252 US7923313B1 (en) 2010-02-26 2010-02-26 Method of making transistor including reentrant profile
US12/713,252 2010-02-26

Publications (1)

Publication Number Publication Date
KR20120116510A true KR20120116510A (ko) 2012-10-22

Family

ID=43837090

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127025076A Withdrawn KR20120116510A (ko) 2010-02-26 2011-02-23 재진입 프로파일을 포함하는 트랜지스터의 제조 방법

Country Status (7)

Country Link
US (1) US7923313B1 (enExample)
EP (1) EP2539925A1 (enExample)
JP (1) JP2013520844A (enExample)
KR (1) KR20120116510A (enExample)
CN (1) CN102770948A (enExample)
BR (1) BR112012019898A2 (enExample)
WO (1) WO2011106337A1 (enExample)

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EP2661776A2 (en) * 2011-01-07 2013-11-13 Eastman Kodak Company Transistor including multiple reentrant profiles
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US8592909B2 (en) 2011-08-26 2013-11-26 Eastman Kodak Company Transistor including single layer reentrant profile
US8637355B2 (en) 2011-08-26 2014-01-28 Eastman Kodak Company Actuating transistor including single layer reentrant profile
US8617942B2 (en) 2011-08-26 2013-12-31 Eastman Kodak Company Producing transistor including single layer reentrant profile
US8803227B2 (en) 2011-09-29 2014-08-12 Eastman Kodak Company Vertical transistor having reduced parasitic capacitance
US8865576B2 (en) 2011-09-29 2014-10-21 Eastman Kodak Company Producing vertical transistor having reduced parasitic capacitance
US8633068B2 (en) 2012-02-22 2014-01-21 Eastman Kodak Company Vertical transistor actuation
US8698230B2 (en) 2012-02-22 2014-04-15 Eastman Kodak Company Circuit including vertical transistors with a conductive stack having reentrant profile
US20140374762A1 (en) * 2013-06-19 2014-12-25 Lee W. Tutt Circuit including four terminal transistor
US20140374806A1 (en) * 2013-06-19 2014-12-25 Lee W. Tutt Four terminal transistor
CN105453297B (zh) * 2013-09-30 2018-04-06 乐金显示有限公司 层压体及其制造方法
WO2015134082A1 (en) * 2014-03-06 2015-09-11 Eastman Kodak Company Vtft with polymer core
US20150257283A1 (en) * 2014-03-06 2015-09-10 Carolyn Rae Ellinger Forming vertically spaced electrodes
WO2021226419A1 (en) * 2020-05-07 2021-11-11 Alliance For Sustainable Energy, Llc Crosslinking of loose insulating powders

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Also Published As

Publication number Publication date
US7923313B1 (en) 2011-04-12
JP2013520844A (ja) 2013-06-06
EP2539925A1 (en) 2013-01-02
CN102770948A (zh) 2012-11-07
WO2011106337A1 (en) 2011-09-01
BR112012019898A2 (pt) 2016-05-03

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Date Code Title Description
PA0105 International application

Patent event date: 20120925

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid