CN102770948A - 制造包括凹型的晶体管的方法 - Google Patents

制造包括凹型的晶体管的方法 Download PDF

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Publication number
CN102770948A
CN102770948A CN2011800109899A CN201180010989A CN102770948A CN 102770948 A CN102770948 A CN 102770948A CN 2011800109899 A CN2011800109899 A CN 2011800109899A CN 201180010989 A CN201180010989 A CN 201180010989A CN 102770948 A CN102770948 A CN 102770948A
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CN
China
Prior art keywords
material layer
layer
substrate
electrical insulation
electrically insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800109899A
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English (en)
Chinese (zh)
Inventor
L·W·图特
S·F·奈尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
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Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN102770948A publication Critical patent/CN102770948A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
CN2011800109899A 2010-02-26 2011-02-23 制造包括凹型的晶体管的方法 Pending CN102770948A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/713,252 2010-02-26
US12/713,252 US7923313B1 (en) 2010-02-26 2010-02-26 Method of making transistor including reentrant profile
PCT/US2011/025795 WO2011106337A1 (en) 2010-02-26 2011-02-23 Methods of making transistor including reentrant profile

Publications (1)

Publication Number Publication Date
CN102770948A true CN102770948A (zh) 2012-11-07

Family

ID=43837090

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800109899A Pending CN102770948A (zh) 2010-02-26 2011-02-23 制造包括凹型的晶体管的方法

Country Status (7)

Country Link
US (1) US7923313B1 (enExample)
EP (1) EP2539925A1 (enExample)
JP (1) JP2013520844A (enExample)
KR (1) KR20120116510A (enExample)
CN (1) CN102770948A (enExample)
BR (1) BR112012019898A2 (enExample)
WO (1) WO2011106337A1 (enExample)

Cited By (1)

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CN106068567A (zh) * 2014-03-06 2016-11-02 伊斯曼柯达公司 具有聚合物芯的vtft

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US8383469B2 (en) * 2011-01-07 2013-02-26 Eastman Kodak Company Producing transistor including reduced channel length
EP2661776A2 (en) * 2011-01-07 2013-11-13 Eastman Kodak Company Transistor including multiple reentrant profiles
US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8847232B2 (en) * 2011-01-07 2014-09-30 Eastman Kodak Company Transistor including reduced channel length
US8409937B2 (en) * 2011-01-07 2013-04-02 Eastman Kodak Company Producing transistor including multi-layer reentrant profile
CN102760690B (zh) 2011-04-29 2014-04-09 中芯国际集成电路制造(上海)有限公司 半导体器件的制造方法和晶片
US8617942B2 (en) 2011-08-26 2013-12-31 Eastman Kodak Company Producing transistor including single layer reentrant profile
US8637355B2 (en) 2011-08-26 2014-01-28 Eastman Kodak Company Actuating transistor including single layer reentrant profile
US8592909B2 (en) 2011-08-26 2013-11-26 Eastman Kodak Company Transistor including single layer reentrant profile
US8865576B2 (en) 2011-09-29 2014-10-21 Eastman Kodak Company Producing vertical transistor having reduced parasitic capacitance
US8803227B2 (en) 2011-09-29 2014-08-12 Eastman Kodak Company Vertical transistor having reduced parasitic capacitance
US8633068B2 (en) 2012-02-22 2014-01-21 Eastman Kodak Company Vertical transistor actuation
US8698230B2 (en) 2012-02-22 2014-04-15 Eastman Kodak Company Circuit including vertical transistors with a conductive stack having reentrant profile
US20140374762A1 (en) * 2013-06-19 2014-12-25 Lee W. Tutt Circuit including four terminal transistor
US20140374806A1 (en) * 2013-06-19 2014-12-25 Lee W. Tutt Four terminal transistor
JP6302553B2 (ja) * 2013-09-30 2018-03-28 エルジー ディスプレイ カンパニー リミテッド 積層体およびその製造方法
US20150257283A1 (en) * 2014-03-06 2015-09-10 Carolyn Rae Ellinger Forming vertically spaced electrodes
US11746264B2 (en) 2020-05-07 2023-09-05 Alliance For Sustainable Energy, Llc Crosslinking of loose insulating powders

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JP2008277375A (ja) * 2007-04-26 2008-11-13 Sanyo Electric Co Ltd 電界効果トランジスタ及びその製造方法
JP2010040580A (ja) * 2008-07-31 2010-02-18 Sanyo Electric Co Ltd 有機薄膜デバイスの製造方法及び有機薄膜デバイス

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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6018176A (en) * 1995-05-26 2000-01-25 Samsung Electronics Co., Ltd. Vertical transistor and memory cell
JP2008277375A (ja) * 2007-04-26 2008-11-13 Sanyo Electric Co Ltd 電界効果トランジスタ及びその製造方法
JP2010040580A (ja) * 2008-07-31 2010-02-18 Sanyo Electric Co Ltd 有機薄膜デバイスの製造方法及び有機薄膜デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106068567A (zh) * 2014-03-06 2016-11-02 伊斯曼柯达公司 具有聚合物芯的vtft
CN106068567B (zh) * 2014-03-06 2019-07-16 伊斯曼柯达公司 具有聚合物芯的vtft

Also Published As

Publication number Publication date
JP2013520844A (ja) 2013-06-06
EP2539925A1 (en) 2013-01-02
BR112012019898A2 (pt) 2016-05-03
KR20120116510A (ko) 2012-10-22
WO2011106337A1 (en) 2011-09-01
US7923313B1 (en) 2011-04-12

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Application publication date: 20121107