BE879342A - Procede de fendage de pastilles semi-conductrices a diodes laser - Google Patents

Procede de fendage de pastilles semi-conductrices a diodes laser

Info

Publication number
BE879342A
BE879342A BE0/197587A BE197587A BE879342A BE 879342 A BE879342 A BE 879342A BE 0/197587 A BE0/197587 A BE 0/197587A BE 197587 A BE197587 A BE 197587A BE 879342 A BE879342 A BE 879342A
Authority
BE
Belgium
Prior art keywords
laser diode
semiconductor pellets
diode semiconductor
splitting laser
splitting
Prior art date
Application number
BE0/197587A
Other languages
English (en)
Inventor
F Scholl
D Collins
H Huggins
G Woolhouse
S Anderson
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of BE879342A publication Critical patent/BE879342A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
BE0/197587A 1978-10-13 1979-10-11 Procede de fendage de pastilles semi-conductrices a diodes laser BE879342A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/951,064 US4237601A (en) 1978-10-13 1978-10-13 Method of cleaving semiconductor diode laser wafers

Publications (1)

Publication Number Publication Date
BE879342A true BE879342A (fr) 1980-04-11

Family

ID=25491206

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/197587A BE879342A (fr) 1978-10-13 1979-10-11 Procede de fendage de pastilles semi-conductrices a diodes laser

Country Status (3)

Country Link
US (1) US4237601A (fr)
JP (1) JPS5553474A (fr)
BE (1) BE879342A (fr)

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JPH0611071B2 (ja) * 1983-09-07 1994-02-09 三洋電機株式会社 化合物半導体基板の分割方法
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JPH0716077B2 (ja) * 1985-10-11 1995-02-22 三菱電機株式会社 半導体レーザ装置の製造方法
JPH0654822B2 (ja) * 1985-11-13 1994-07-20 三洋電機株式会社 半導体レ−ザの製造方法
US4814296A (en) * 1987-08-28 1989-03-21 Xerox Corporation Method of fabricating image sensor dies for use in assembling arrays
DE3731312C2 (de) * 1987-09-17 1997-02-13 Siemens Ag Verfahren zum Vereinzeln von monolithisch hergestellten Laserdioden
JPH0233948A (ja) * 1988-07-22 1990-02-05 Matsushita Electric Ind Co Ltd 光半導体装置の製造方法
DE3826736A1 (de) * 1988-08-05 1990-02-08 Siemens Ag Verfahren zum trennen von monolithisch auf einer halbleitersubstratscheibe erzeugten led-chip-anordnungen
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
US4997793A (en) * 1989-11-21 1991-03-05 Eastman Kodak Company Method of improving cleaving of diode arrays
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
US5000811A (en) * 1989-11-22 1991-03-19 Xerox Corporation Precision buttable subunits via dicing
DE4240539C2 (de) * 1992-01-21 1997-07-03 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiterlasers
US5259925A (en) * 1992-06-05 1993-11-09 Mcdonnell Douglas Corporation Method of cleaning a plurality of semiconductor devices
JPH06196813A (ja) * 1992-10-14 1994-07-15 Sony Corp 半導体レーザとその製法
US5309518A (en) * 1992-10-15 1994-05-03 Bose Corporation Multiple driver electroacoustical transducing
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
US5454002A (en) * 1994-04-28 1995-09-26 The Board Of Regents Of The University Of Oklahoma High temperature semiconductor diode laser
JP3409928B2 (ja) * 1994-10-15 2003-05-26 株式会社東芝 半導体装置の製造方法
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US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6430810B1 (en) 1997-10-28 2002-08-13 Uniax Corporation Mechanical scribing methods of forming a patterned metal layer in an electronic device
JPH11195627A (ja) * 1997-12-27 1999-07-21 Hewlett Packard Co <Hp> 光学素子の製造方法
JP3324641B2 (ja) * 1998-02-20 2002-09-17 日本電気株式会社 半導体装置の製造方法
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US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
WO2001011930A2 (fr) 1999-08-10 2001-02-15 Silicon Genesis Corporation Procede de clivage permettant de fabriquer des substrats multicouche a l'aide de faibles doses d'implantation
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
JP3444536B2 (ja) * 1999-10-25 2003-09-08 松下電器産業株式会社 半導体レーザー素子の製造方法および劈開装置
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US6444499B1 (en) 2000-03-30 2002-09-03 Amkor Technology, Inc. Method for fabricating a snapable multi-package array substrate, snapable multi-package array and snapable packaged electronic components
GB0127688D0 (en) * 2001-11-19 2002-01-09 Denselight Semiconductors Pte Method of dicing a complex topologically structured wafer
US7371659B1 (en) * 2001-12-12 2008-05-13 Lsi Logic Corporation Substrate laser marking
US6806544B2 (en) * 2002-11-05 2004-10-19 New Wave Research Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure
US6960813B2 (en) * 2002-06-10 2005-11-01 New Wave Research Method and apparatus for cutting devices from substrates
US6580054B1 (en) * 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
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US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US7250330B2 (en) * 2002-10-29 2007-07-31 International Business Machines Corporation Method of making an electronic package
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
US20040166662A1 (en) * 2003-02-21 2004-08-26 Aptos Corporation MEMS wafer level chip scale package
JP4342832B2 (ja) * 2003-05-16 2009-10-14 株式会社東芝 半導体装置およびその製造方法
US6815813B1 (en) * 2003-07-01 2004-11-09 International Business Machines Corporation Self-contained heat sink and a method for fabricating same
US8835802B2 (en) * 2006-01-24 2014-09-16 Stephen C. Baer Cleaving wafers from silicon crystals
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) * 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP2009252998A (ja) * 2008-04-07 2009-10-29 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
KR20120098869A (ko) * 2009-12-07 2012-09-05 제이피 서셀 어소시에트, 인코퍼레이티드 레이저 가공과 스크라이빙 시스템 및 방법
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
KR101313232B1 (ko) * 2009-12-08 2013-09-30 한국전자통신연구원 도파로 절단면 형성 방법 및 이를 채용하는 포토닉스 소자
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US8871613B2 (en) * 2012-06-18 2014-10-28 Semiconductor Components Industries, Llc Semiconductor die singulation method
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US9356422B2 (en) * 2014-02-26 2016-05-31 Applied Optoelectronics, Inc. Scribe etch process for semiconductor laser chip manufacturing
DE102017117136B4 (de) * 2017-07-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
US11377758B2 (en) 2020-11-23 2022-07-05 Stephen C. Baer Cleaving thin wafers from crystals

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Also Published As

Publication number Publication date
JPS5553474A (en) 1980-04-18
US4237601A (en) 1980-12-09

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