AU2017320331B2 - Capacitors, electrodes, reduced graphene oxide and methods and apparatuses of manufacture - Google Patents

Capacitors, electrodes, reduced graphene oxide and methods and apparatuses of manufacture Download PDF

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Publication number
AU2017320331B2
AU2017320331B2 AU2017320331A AU2017320331A AU2017320331B2 AU 2017320331 B2 AU2017320331 B2 AU 2017320331B2 AU 2017320331 A AU2017320331 A AU 2017320331A AU 2017320331 A AU2017320331 A AU 2017320331A AU 2017320331 B2 AU2017320331 B2 AU 2017320331B2
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graphene oxide
film
porous
rgo
oxide film
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AU2017320331A1 (en
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Baohua Jia
Han Lin
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RMIT University
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Royal Melbourne Institute of Technology Ltd
Melbourne Institute of Technology
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/198—Graphene oxide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/19—Preparation by exfoliation
    • C01B32/192—Preparation by exfoliation starting from graphitic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
AU2017320331A 2016-08-30 2017-08-29 Capacitors, electrodes, reduced graphene oxide and methods and apparatuses of manufacture Active AU2017320331B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2016903449A AU2016903449A0 (en) 2016-08-30 Capacitors, electrodes and methods of manufacture
AU2016903449 2016-08-30
PCT/AU2017/050916 WO2018039710A1 (en) 2016-08-30 2017-08-29 Capacitors, electrodes, reduced graphene oxide and methods and apparatuses of manufacture

Publications (2)

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AU2017320331A1 AU2017320331A1 (en) 2019-03-21
AU2017320331B2 true AU2017320331B2 (en) 2022-08-11

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US (2) US20210065996A1 (enExample)
EP (1) EP3507823B8 (enExample)
JP (1) JP2019532887A (enExample)
KR (1) KR20190044085A (enExample)
CN (1) CN109906499B (enExample)
AU (1) AU2017320331B2 (enExample)
WO (1) WO2018039710A1 (enExample)

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WO2019182874A1 (en) * 2018-03-20 2019-09-26 Printed Energy Pty Ltd Diatomaceous energy storage devices
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US12054395B2 (en) 2019-02-25 2024-08-06 Royal Melbourne Institute Of Technology Reduced graphene oxide electrodes and supercapacitors
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CN111390377B (zh) * 2020-03-27 2021-08-20 伊诺福科光学技术有限公司 一种用于激光加工的表面自动聚焦方法及系统、存储介质
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CN113096973B (zh) * 2021-04-12 2024-05-10 王晓京 用于制备多孔石墨烯膜的方法、多孔石墨烯膜和电极
CN113670484B (zh) * 2021-08-18 2023-07-21 吉林大学重庆研究院 一种具有互补螺旋结构柔性压力传感器、制备方法及其应用
CN114103125B (zh) * 2021-09-30 2022-06-28 哈尔滨工业大学（威海） 一种高导热微型器件的制备方法
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CN114560460B (zh) * 2022-03-11 2023-05-12 南方科技大学 一种lig材料、其制备方法及应用
JP7478455B2 (ja) 2022-03-24 2024-05-07 シーズテクノ株式会社 酸化グラフェンの還元方法
CN114804080B (zh) * 2022-04-14 2024-09-24 伊诺福科光学技术有限公司 一种低成本大面积制备石墨烯薄膜的方法
US20250293147A1 (en) * 2024-03-15 2025-09-18 Qualcomm Incorporated Package substrate with a reserve capacitor
KR20250153018A (ko) 2024-04-17 2025-10-24 경상국립대학교산학협력단 듀얼 펄스 레이저를 이용하는 환원된 그래핀 산화물 촉매 제조방법 및 이에 따라 제조된 환원된 그래핀 산화물 촉매
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Also Published As

Publication number Publication date
EP3507823A1 (en) 2019-07-10
US20210065996A1 (en) 2021-03-04
KR20190044085A (ko) 2019-04-29
EP3507823B1 (en) 2023-03-22
CN109906499B (zh) 2024-07-19
EP3507823B8 (en) 2023-04-26
WO2018039710A1 (en) 2018-03-08
CN109906499A (zh) 2019-06-18
JP2019532887A (ja) 2019-11-14
AU2017320331A1 (en) 2019-03-21
US12272496B2 (en) 2025-04-08
US20230118294A1 (en) 2023-04-20
EP3507823A4 (en) 2020-04-15

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