AU2003260899A1 - Power semiconductor devices - Google Patents
Power semiconductor devicesInfo
- Publication number
- AU2003260899A1 AU2003260899A1 AU2003260899A AU2003260899A AU2003260899A1 AU 2003260899 A1 AU2003260899 A1 AU 2003260899A1 AU 2003260899 A AU2003260899 A AU 2003260899A AU 2003260899 A AU2003260899 A AU 2003260899A AU 2003260899 A1 AU2003260899 A1 AU 2003260899A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor devices
- power semiconductor
- power
- devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0223034A GB0223034D0 (en) | 2002-10-04 | 2002-10-04 | Power semiconductor devices |
GB0223034.0 | 2002-10-04 | ||
GB0229528.5 | 2002-12-18 | ||
GB0229528A GB0229528D0 (en) | 2002-12-18 | 2002-12-18 | Power semiconductor devices |
PCT/IB2003/004138 WO2004032243A1 (fr) | 2002-10-04 | 2003-09-15 | Dispositifs a semi-conducteurs de puissance |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003260899A1 true AU2003260899A1 (en) | 2004-04-23 |
Family
ID=32071249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003260899A Abandoned AU2003260899A1 (en) | 2002-10-04 | 2003-09-15 | Power semiconductor devices |
Country Status (6)
Country | Link |
---|---|
US (1) | US7504690B2 (fr) |
EP (1) | EP1552562A1 (fr) |
JP (1) | JP2006501666A (fr) |
KR (1) | KR20050056223A (fr) |
AU (1) | AU2003260899A1 (fr) |
WO (1) | WO2004032243A1 (fr) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4590884B2 (ja) | 2003-06-13 | 2010-12-01 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP4191025B2 (ja) * | 2003-12-22 | 2008-12-03 | Necエレクトロニクス株式会社 | 縦型misfet |
US7405452B2 (en) * | 2004-02-02 | 2008-07-29 | Hamza Yilmaz | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
US7667264B2 (en) * | 2004-09-27 | 2010-02-23 | Alpha And Omega Semiconductor Limited | Shallow source MOSFET |
GB0422476D0 (en) * | 2004-10-09 | 2004-11-10 | Koninkl Philips Electronics Nv | Power semiconductor devices |
JP4955222B2 (ja) * | 2005-05-20 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5050329B2 (ja) * | 2005-08-26 | 2012-10-17 | サンケン電気株式会社 | トレンチ構造半導体装置及びその製造方法 |
US8022482B2 (en) * | 2006-02-14 | 2011-09-20 | Alpha & Omega Semiconductor, Ltd | Device configuration of asymmetrical DMOSFET with schottky barrier source |
JP5410649B2 (ja) * | 2006-04-05 | 2014-02-05 | 株式会社豊田中央研究所 | Mos型半導体装置 |
KR100881015B1 (ko) * | 2006-11-30 | 2009-01-30 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US7948220B2 (en) * | 2007-04-11 | 2011-05-24 | International Rectifier Corporation | Method and apparatus to reduce dynamic Rdson in a power switching circuit having a III-nitride device |
US7732848B2 (en) * | 2007-05-31 | 2010-06-08 | Infineon Technologies Ag | Power semiconductor device with improved heat dissipation |
EP2091083A3 (fr) * | 2008-02-13 | 2009-10-14 | Denso Corporation | Dispositif semi-conducteur de carbure de silicium comprenant une couche profonde |
US7875919B2 (en) * | 2008-03-31 | 2011-01-25 | International Business Machines Corporation | Shallow trench capacitor compatible with high-K / metal gate |
JP4640439B2 (ja) * | 2008-04-17 | 2011-03-02 | 株式会社デンソー | 炭化珪素半導体装置 |
KR101578931B1 (ko) * | 2008-12-05 | 2015-12-21 | 주식회사 동부하이텍 | 반도체 소자 및 반도체 소자의 제조 방법 |
KR101811895B1 (ko) | 2010-03-23 | 2017-12-22 | 에이비비 슈바이쯔 아게 | 전력 반도체 소자 |
EP2732471B8 (fr) * | 2011-07-14 | 2019-10-09 | ABB Schweiz AG | Transistor bipolaire à porte isolée et procédé de fabrication associé |
US8476704B2 (en) * | 2011-08-19 | 2013-07-02 | Nan Ya Technology Corporation | Circuit structure with vertical double gate |
US8492226B2 (en) | 2011-09-21 | 2013-07-23 | Globalfoundries Singapore Pte. Ltd. | Trench transistor |
US9054133B2 (en) | 2011-09-21 | 2015-06-09 | Globalfoundries Singapore Pte. Ltd. | High voltage trench transistor |
US11101372B2 (en) * | 2013-02-07 | 2021-08-24 | John Wood | Double-sided vertical power transistor structure |
KR101452091B1 (ko) | 2013-02-26 | 2014-10-16 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조 방법 |
KR20160114498A (ko) * | 2014-01-31 | 2016-10-05 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 집적 회로 장치 및 전원 시스템 |
US20150221764A1 (en) * | 2014-02-04 | 2015-08-06 | Infineon Technologies Ag | Wafer based beol process for chip embedding |
JP6036765B2 (ja) * | 2014-08-22 | 2016-11-30 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
US9780207B2 (en) * | 2015-12-30 | 2017-10-03 | Globalfoundries Singapore Pte. Ltd. | Self-aligned high voltage LDMOS |
KR101786738B1 (ko) | 2016-05-11 | 2017-10-18 | 현대오트론 주식회사 | 반도체 장치 |
DE102016112018B4 (de) * | 2016-06-30 | 2020-03-12 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit vollständig verarmten Kanalregionen |
DE102016114229B3 (de) | 2016-08-01 | 2017-12-07 | Infineon Technologies Austria Ag | Transistorbauelement mit einer zwei schichten umfassenden feldelektrodeund sein herstellverfahren |
KR101875638B1 (ko) * | 2016-10-14 | 2018-07-06 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
US10424646B2 (en) | 2017-09-26 | 2019-09-24 | Nxp Usa, Inc. | Field-effect transistor and method therefor |
US10600911B2 (en) | 2017-09-26 | 2020-03-24 | Nxp Usa, Inc. | Field-effect transistor and method therefor |
US10522677B2 (en) | 2017-09-26 | 2019-12-31 | Nxp Usa, Inc. | Field-effect transistor and method therefor |
CN107706237B (zh) * | 2017-10-31 | 2024-03-29 | 珠海零边界集成电路有限公司 | 绝缘栅双极型晶体管器件及其制作方法、电力电子设备 |
EP3477862A1 (fr) * | 2017-10-31 | 2019-05-01 | Nexperia B.V. | Dispositif semi-conducteur et procédé de fonctionnement |
US11031478B2 (en) | 2018-01-23 | 2021-06-08 | Infineon Technologies Austria Ag | Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture |
CN108511521B (zh) * | 2018-02-13 | 2020-11-10 | 株洲中车时代半导体有限公司 | 一种具有含虚栅的复合栅结构的igbt芯片的制作方法 |
US10600879B2 (en) * | 2018-03-12 | 2020-03-24 | Nxp Usa, Inc. | Transistor trench structure with field plate structures |
CN108766965B (zh) * | 2018-08-03 | 2023-06-13 | 淄博汉林半导体有限公司 | 一种漏极共用的沟槽式双mos管器件及制造方法 |
JP7250473B2 (ja) * | 2018-10-18 | 2023-04-03 | 三菱電機株式会社 | 半導体装置 |
US10833174B2 (en) | 2018-10-26 | 2020-11-10 | Nxp Usa, Inc. | Transistor devices with extended drain regions located in trench sidewalls |
US10749023B2 (en) | 2018-10-30 | 2020-08-18 | Nxp Usa, Inc. | Vertical transistor with extended drain region |
US10749028B2 (en) | 2018-11-30 | 2020-08-18 | Nxp Usa, Inc. | Transistor with gate/field plate structure |
DE112020000717T5 (de) * | 2019-02-07 | 2021-11-04 | Rohm Co., Ltd. | Halbleiterbauelement |
US11387348B2 (en) | 2019-11-22 | 2022-07-12 | Nxp Usa, Inc. | Transistor formed with spacer |
CN112992682A (zh) * | 2019-12-13 | 2021-06-18 | 华润微电子(重庆)有限公司 | 沟槽型场效应晶体管结构及其制备方法 |
US11329156B2 (en) | 2019-12-16 | 2022-05-10 | Nxp Usa, Inc. | Transistor with extended drain region |
US11217675B2 (en) | 2020-03-31 | 2022-01-04 | Nxp Usa, Inc. | Trench with different transverse cross-sectional widths |
US11075110B1 (en) | 2020-03-31 | 2021-07-27 | Nxp Usa, Inc. | Transistor trench with field plate structure |
JP7461218B2 (ja) * | 2020-05-22 | 2024-04-03 | ローム株式会社 | 半導体装置 |
TW202215662A (zh) * | 2020-10-05 | 2022-04-16 | 美商電源整合公司 | 垂直場效電晶體、場效電晶體以及疊接裝置 |
CN114582965B (zh) * | 2022-05-06 | 2022-07-19 | 南京微盟电子有限公司 | 一种低开关损耗功率器件结构及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05343691A (ja) * | 1992-06-08 | 1993-12-24 | Nippondenso Co Ltd | 縦型絶縁ゲート電界効果トランジスタ |
US5616945A (en) * | 1995-10-13 | 1997-04-01 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
JPH09205204A (ja) * | 1996-01-25 | 1997-08-05 | Nippon Inter Electronics Corp | 絶縁ゲート型半導体装置 |
JP3641547B2 (ja) * | 1998-03-25 | 2005-04-20 | 株式会社豊田中央研究所 | 横型mos素子を含む半導体装置 |
US6303410B1 (en) * | 1998-06-01 | 2001-10-16 | North Carolina State University | Methods of forming power semiconductor devices having T-shaped gate electrodes |
US6413822B2 (en) * | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
TW484213B (en) * | 2001-04-24 | 2002-04-21 | Ememory Technology Inc | Forming method and operation method of trench type separation gate nonvolatile flash memory cell structure |
US6952034B2 (en) * | 2002-04-05 | 2005-10-04 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with buried source line and floating gate |
-
2003
- 2003-09-15 JP JP2004541057A patent/JP2006501666A/ja not_active Withdrawn
- 2003-09-15 EP EP03799011A patent/EP1552562A1/fr not_active Withdrawn
- 2003-09-15 WO PCT/IB2003/004138 patent/WO2004032243A1/fr active Application Filing
- 2003-09-15 US US10/529,731 patent/US7504690B2/en active Active
- 2003-09-15 KR KR1020057005660A patent/KR20050056223A/ko not_active Application Discontinuation
- 2003-09-15 AU AU2003260899A patent/AU2003260899A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2004032243A1 (fr) | 2004-04-15 |
KR20050056223A (ko) | 2005-06-14 |
US7504690B2 (en) | 2009-03-17 |
EP1552562A1 (fr) | 2005-07-13 |
JP2006501666A (ja) | 2006-01-12 |
US20060001084A1 (en) | 2006-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |