AU2003288446A1 - Power integrated circuits - Google Patents

Power integrated circuits

Info

Publication number
AU2003288446A1
AU2003288446A1 AU2003288446A AU2003288446A AU2003288446A1 AU 2003288446 A1 AU2003288446 A1 AU 2003288446A1 AU 2003288446 A AU2003288446 A AU 2003288446A AU 2003288446 A AU2003288446 A AU 2003288446A AU 2003288446 A1 AU2003288446 A1 AU 2003288446A1
Authority
AU
Australia
Prior art keywords
integrated circuits
power integrated
power
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003288446A
Inventor
Paul Holland
Peter Igic
Philip Mawby
Thomas Starke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
POWER ELECTRONICS DESIGN CENTRE
Original Assignee
POWER ELECTRONICS DESIGN CT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB0228754A priority Critical patent/GB0228754D0/en
Priority to GB0228754.8 priority
Priority to GB0228755.5 priority
Priority to GB0228755A priority patent/GB0228755D0/en
Application filed by POWER ELECTRONICS DESIGN CT filed Critical POWER ELECTRONICS DESIGN CT
Priority to PCT/GB2003/005367 priority patent/WO2004053993A1/en
Publication of AU2003288446A1 publication Critical patent/AU2003288446A1/en
Application status is Abandoned legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283Lateral isolation by refilling of trenches with dielectric material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
AU2003288446A 2002-12-10 2003-12-09 Power integrated circuits Abandoned AU2003288446A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB0228754A GB0228754D0 (en) 2002-12-10 2002-12-10 Power integrated circuits
GB0228754.8 2002-12-10
GB0228755.5 2002-12-10
GB0228755A GB0228755D0 (en) 2002-12-10 2002-12-10 Power integrated circuits
PCT/GB2003/005367 WO2004053993A1 (en) 2002-12-10 2003-12-09 Power integrated circuits

Publications (1)

Publication Number Publication Date
AU2003288446A1 true AU2003288446A1 (en) 2004-06-30

Family

ID=32510404

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003288446A Abandoned AU2003288446A1 (en) 2002-12-10 2003-12-09 Power integrated circuits

Country Status (3)

Country Link
EP (1) EP1576669A1 (en)
AU (1) AU2003288446A1 (en)
WO (1) WO2004053993A1 (en)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202004021675U1 (en) 2003-05-06 2010-05-12 Enecsys Ltd., Cambridge Power supply circuits
US8067855B2 (en) 2003-05-06 2011-11-29 Enecsys Limited Power supply circuits
EP1617476A3 (en) * 2004-07-16 2007-12-26 Power Electronics Design Centre Vertical integration in power integrated circuits
US8077437B2 (en) 2004-11-08 2011-12-13 Enecsys Limited Integrated circuits and power supplies
DE102005002023B4 (en) * 2005-01-15 2007-08-16 Atmel Germany Gmbh Semiconductor structure with vertical JFET
DE102005046624B3 (en) * 2005-09-29 2007-03-22 Atmel Germany Gmbh Production of semiconductor arrangement with formation of conductive substrate, structural element region (SER) layer for insulating SER from substrate useful in semiconductor technology, e.g. in production of DMOS-field effect transistors
JP4087416B2 (en) * 2006-04-06 2008-05-21 シャープ株式会社 Power IC device and manufacturing method thereof
US8618692B2 (en) 2007-12-04 2013-12-31 Solaredge Technologies Ltd. Distributed power system using direct current power sources
US9112379B2 (en) 2006-12-06 2015-08-18 Solaredge Technologies Ltd. Pairing of components in a direct current distributed power generation system
US8384243B2 (en) 2007-12-04 2013-02-26 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US9130401B2 (en) 2006-12-06 2015-09-08 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US8319471B2 (en) 2006-12-06 2012-11-27 Solaredge, Ltd. Battery power delivery module
US8963369B2 (en) 2007-12-04 2015-02-24 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US8013472B2 (en) 2006-12-06 2011-09-06 Solaredge, Ltd. Method for distributed power harvesting using DC power sources
US8816535B2 (en) 2007-10-10 2014-08-26 Solaredge Technologies, Ltd. System and method for protection during inverter shutdown in distributed power installations
US8473250B2 (en) 2006-12-06 2013-06-25 Solaredge, Ltd. Monitoring of distributed power harvesting systems using DC power sources
WO2008152911A1 (en) * 2007-06-08 2008-12-18 Panasonic Electric Works Co., Ltd. Semiconductor device, and its manufacturing method
US8319483B2 (en) 2007-08-06 2012-11-27 Solaredge Technologies Ltd. Digital average input current control in power converter
US8278731B2 (en) 2007-11-20 2012-10-02 Denso Corporation Semiconductor device having SOI substrate and method for manufacturing the same
US8289742B2 (en) 2007-12-05 2012-10-16 Solaredge Ltd. Parallel connected inverters
CN105244905B (en) 2007-12-05 2019-05-21 太阳能安吉有限公司 Release mechanism in distributed power device is waken up and method for closing
WO2009072076A2 (en) 2007-12-05 2009-06-11 Solaredge Technologies Ltd. Current sensing on a mosfet
US9291696B2 (en) 2007-12-05 2016-03-22 Solaredge Technologies Ltd. Photovoltaic system power tracking method
US20190013777A9 (en) 2007-12-05 2019-01-10 Meir Adest Testing of a Photovoltaic Panel
US8111052B2 (en) 2008-03-24 2012-02-07 Solaredge Technologies Ltd. Zero voltage switching
EP2294669B8 (en) 2008-05-05 2016-12-07 Solaredge Technologies Ltd. Direct current power combiner
US8947194B2 (en) 2009-05-26 2015-02-03 Solaredge Technologies Ltd. Theft detection and prevention in a power generation system
GB2485527B (en) 2010-11-09 2012-12-19 Solaredge Technologies Ltd Arc detection and prevention in a power generation system
GB2486408A (en) 2010-12-09 2012-06-20 Solaredge Technologies Ltd Disconnection of a string carrying direct current
GB2483317B (en) 2011-01-12 2012-08-22 Solaredge Technologies Ltd Serially connected inverters
US8570005B2 (en) 2011-09-12 2013-10-29 Solaredge Technologies Ltd. Direct current link circuit
GB2498791A (en) 2012-01-30 2013-07-31 Solaredge Technologies Ltd Photovoltaic panel circuitry
US9853565B2 (en) 2012-01-30 2017-12-26 Solaredge Technologies Ltd. Maximized power in a photovoltaic distributed power system
GB2498790A (en) 2012-01-30 2013-07-31 Solaredge Technologies Ltd Maximising power in a photovoltaic distributed power system
GB2499991A (en) 2012-03-05 2013-09-11 Solaredge Technologies Ltd DC link circuit for photovoltaic array
US10115841B2 (en) 2012-06-04 2018-10-30 Solaredge Technologies Ltd. Integrated photovoltaic panel circuitry
US9941813B2 (en) 2013-03-14 2018-04-10 Solaredge Technologies Ltd. High frequency multi-level inverter
US9548619B2 (en) 2013-03-14 2017-01-17 Solaredge Technologies Ltd. Method and apparatus for storing and depleting energy
EP3506370A1 (en) 2013-03-15 2019-07-03 Solaredge Technologies Ltd. Bypass mechanism
EP2887387A1 (en) * 2013-12-20 2015-06-24 Nxp B.V. Semiconductor device and associated method
US9318974B2 (en) 2014-03-26 2016-04-19 Solaredge Technologies Ltd. Multi-level inverter with flying capacitor topology
US10230310B2 (en) 2016-04-05 2019-03-12 Solaredge Technologies Ltd Safety switch for photovoltaic systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138422A (en) * 1987-10-27 1992-08-11 Nippondenso Co., Ltd. Semiconductor device which includes multiple isolated semiconductor segments on one chip
JP2788269B2 (en) * 1988-02-08 1998-08-20 株式会社東芝 Semiconductor device and manufacturing method thereof
EP1319252B1 (en) * 2000-09-21 2012-02-15 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device

Also Published As

Publication number Publication date
EP1576669A1 (en) 2005-09-21
WO2004053993A1 (en) 2004-06-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase