AU2003248823A1 - Trench schottky barrier diode - Google Patents

Trench schottky barrier diode

Info

Publication number
AU2003248823A1
AU2003248823A1 AU2003248823A AU2003248823A AU2003248823A1 AU 2003248823 A1 AU2003248823 A1 AU 2003248823A1 AU 2003248823 A AU2003248823 A AU 2003248823A AU 2003248823 A AU2003248823 A AU 2003248823A AU 2003248823 A1 AU2003248823 A1 AU 2003248823A1
Authority
AU
Australia
Prior art keywords
schottky barrier
barrier diode
trench schottky
trench
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003248823A
Other languages
English (en)
Inventor
Kohji Andoh
Davide Chiola
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of AU2003248823A1 publication Critical patent/AU2003248823A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces
AU2003248823A 2002-07-11 2003-07-02 Trench schottky barrier diode Abandoned AU2003248823A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/193,783 US6855593B2 (en) 2002-07-11 2002-07-11 Trench Schottky barrier diode
US10/193,783 2002-07-11
PCT/US2003/021009 WO2004008529A1 (en) 2002-07-11 2003-07-02 Trench schottky barrier diode

Publications (1)

Publication Number Publication Date
AU2003248823A1 true AU2003248823A1 (en) 2004-02-02

Family

ID=30114607

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003248823A Abandoned AU2003248823A1 (en) 2002-07-11 2003-07-02 Trench schottky barrier diode

Country Status (7)

Country Link
US (1) US6855593B2 (https=)
EP (1) EP1543554A4 (https=)
JP (1) JP2005532698A (https=)
CN (1) CN1291483C (https=)
AU (1) AU2003248823A1 (https=)
TW (1) TWI232590B (https=)
WO (1) WO2004008529A1 (https=)

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US10815124B2 (en) 2012-07-12 2020-10-27 Seerstone Llc Solid carbon products comprising carbon nanotubes and methods of forming same
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US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
CN105161417B (zh) * 2015-08-31 2019-01-04 上海华虹宏力半导体制造有限公司 肖特基二极管工艺方法
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Also Published As

Publication number Publication date
WO2004008529A1 (en) 2004-01-22
CN1291483C (zh) 2006-12-20
JP2005532698A (ja) 2005-10-27
US6855593B2 (en) 2005-02-15
EP1543554A1 (en) 2005-06-22
EP1543554A4 (en) 2008-05-07
CN1672257A (zh) 2005-09-21
US20040007723A1 (en) 2004-01-15
TW200402891A (en) 2004-02-16
TWI232590B (en) 2005-05-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase