AU2001238706A1 - Photoacid generators and photoresists comprising same - Google Patents

Photoacid generators and photoresists comprising same

Info

Publication number
AU2001238706A1
AU2001238706A1 AU2001238706A AU3870601A AU2001238706A1 AU 2001238706 A1 AU2001238706 A1 AU 2001238706A1 AU 2001238706 A AU2001238706 A AU 2001238706A AU 3870601 A AU3870601 A AU 3870601A AU 2001238706 A1 AU2001238706 A1 AU 2001238706A1
Authority
AU
Australia
Prior art keywords
photoresists
same
photoacid generators
photoacid
generators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238706A
Other languages
English (en)
Inventor
James F Cameron
Gerhard Pohlers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2001238706A1 publication Critical patent/AU2001238706A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerisation Methods In General (AREA)
AU2001238706A 2000-02-27 2001-02-27 Photoacid generators and photoresists comprising same Abandoned AU2001238706A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18571700P 2000-02-27 2000-02-27
US60/185,717 2000-02-27
PCT/US2001/006284 WO2001063363A2 (en) 2000-02-27 2001-02-27 Photoacid generators and photoresists comprising same

Publications (1)

Publication Number Publication Date
AU2001238706A1 true AU2001238706A1 (en) 2001-09-03

Family

ID=22682185

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001238706A Abandoned AU2001238706A1 (en) 2000-02-27 2001-02-27 Photoacid generators and photoresists comprising same

Country Status (4)

Country Link
US (1) US6783912B2 (ja)
JP (1) JP4991074B2 (ja)
AU (1) AU2001238706A1 (ja)
WO (1) WO2001063363A2 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662321A1 (en) * 2004-11-24 2006-05-31 Rohm and Haas Electronic Materials, L.L.C. Photoresist compositions
KR100676885B1 (ko) * 2004-12-02 2007-02-23 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP4979621B2 (ja) * 2008-03-12 2012-07-18 株式会社トクヤマ 含硫黄重合性アダマンタン化合物
US8338077B2 (en) 2009-06-22 2012-12-25 Rohm And Haas Electronic Materials Llc Photoacid generators and photoresists comprising same
JP5851688B2 (ja) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性組成物
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
US9994538B2 (en) 2015-02-02 2018-06-12 Basf Se Latent acids and their use
US20220019141A1 (en) 2018-09-05 2022-01-20 Merck Patent Gmbh Positive working photosensitive material

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GB1231789A (ja) * 1967-09-05 1971-05-12
DE3804316A1 (de) * 1988-02-12 1989-08-24 Merck Patent Gmbh Verfahren zur herstellung von 1,2-disulfon-verbindungen
JPH02106751A (ja) 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd パターン形成材料
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JPH03223863A (ja) * 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd レジスト材料
JP2500533B2 (ja) * 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
JP3024621B2 (ja) * 1990-01-30 2000-03-21 和光純薬工業株式会社 レジスト材料用酸発生剤
JP3392546B2 (ja) * 1994-11-16 2003-03-31 株式会社東芝 パターン形成方法
US5585220A (en) * 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator
ATE199985T1 (de) * 1996-02-09 2001-04-15 Wako Pure Chem Ind Ltd Polymer und resistmaterial
JP3677952B2 (ja) * 1996-07-18 2005-08-03 Ｊｓｒ株式会社 感放射線性樹脂組成物
US5945517A (en) * 1996-07-24 1999-08-31 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition
JP3816638B2 (ja) * 1996-07-24 2006-08-30 東京応化工業株式会社 化学増幅型レジスト組成物
JP3854689B2 (ja) * 1997-07-24 2006-12-06 東京応化工業株式会社 新規な光酸発生剤
JP3865473B2 (ja) * 1997-07-24 2007-01-10 東京応化工業株式会社 新規なジアゾメタン化合物
JP3919887B2 (ja) * 1996-07-24 2007-05-30 東京応化工業株式会社 化学増幅型ポジ型レジスト組成物
JPH10171112A (ja) * 1996-12-11 1998-06-26 Mitsubishi Chem Corp ポジ型感光性組成物
JP4097782B2 (ja) * 1997-05-07 2008-06-11 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線性組成物
JP3966430B2 (ja) * 1997-07-15 2007-08-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線性組成物
TW546543B (en) * 1997-10-08 2003-08-11 Shinetsu Chemical Co Resist material and patterning process
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JP3998105B2 (ja) * 1998-02-04 2007-10-24 東京応化工業株式会社 化学増幅型ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4062713B2 (ja) 1998-03-02 2008-03-19 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JPH11352693A (ja) * 1998-06-08 1999-12-24 Nippon Zeon Co Ltd レジスト組成物およびレジストパターンの形成方法
JP3972469B2 (ja) * 1998-06-12 2007-09-05 Ｊｓｒ株式会社 ジアゾジスルホン化合物および感放射線性樹脂組成物
JP2000171967A (ja) * 1998-09-28 2000-06-23 Mitsubishi Chemicals Corp 感放射線性組成物
JP2001042530A (ja) * 1999-07-12 2001-02-16 Shipley Co Llc ポジ型感放射線性樹脂組成物
JP3969909B2 (ja) * 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP4247592B2 (ja) * 2000-07-13 2009-04-02 信越化学工業株式会社 レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
WO2001063363A3 (en) 2003-03-20
WO2001063363A2 (en) 2001-08-30
US6783912B2 (en) 2004-08-31
US20020009663A1 (en) 2002-01-24
JP2003527355A (ja) 2003-09-16
JP4991074B2 (ja) 2012-08-01

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