ATE98814T1 - Verfahren zur herstellung einer planarleiterbahn durch isotropes abscheiden von leitendem werkstoff. - Google Patents

Verfahren zur herstellung einer planarleiterbahn durch isotropes abscheiden von leitendem werkstoff.

Info

Publication number
ATE98814T1
ATE98814T1 AT87201755T AT87201755T ATE98814T1 AT E98814 T1 ATE98814 T1 AT E98814T1 AT 87201755 T AT87201755 T AT 87201755T AT 87201755 T AT87201755 T AT 87201755T AT E98814 T1 ATE98814 T1 AT E98814T1
Authority
AT
Austria
Prior art keywords
openings
insulating layer
planar
deposition
isotropical
Prior art date
Application number
AT87201755T
Other languages
English (en)
Inventor
Eliot Kent Broadbent
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of ATE98814T1 publication Critical patent/ATE98814T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Multi-Conductor Connections (AREA)
AT87201755T 1986-09-30 1987-09-14 Verfahren zur herstellung einer planarleiterbahn durch isotropes abscheiden von leitendem werkstoff. ATE98814T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91342886A 1986-09-30 1986-09-30
EP87201755A EP0262719B1 (de) 1986-09-30 1987-09-14 Verfahren zur Herstellung einer Planarleiterbahn durch isotropes Abscheiden von leitendem Werkstoff

Publications (1)

Publication Number Publication Date
ATE98814T1 true ATE98814T1 (de) 1994-01-15

Family

ID=25433265

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87201755T ATE98814T1 (de) 1986-09-30 1987-09-14 Verfahren zur herstellung einer planarleiterbahn durch isotropes abscheiden von leitendem werkstoff.

Country Status (6)

Country Link
EP (1) EP0262719B1 (de)
JP (1) JP2573621B2 (de)
KR (1) KR960009091B1 (de)
AT (1) ATE98814T1 (de)
CA (1) CA1294716C (de)
DE (1) DE3788485T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682660B2 (ja) * 1987-08-17 1994-10-19 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 導電性スタツドを形成する方法
US4847111A (en) * 1988-06-30 1989-07-11 Hughes Aircraft Company Plasma-nitridated self-aligned tungsten system for VLSI interconnections
KR910006744B1 (ko) * 1988-07-21 1991-09-02 삼성전자 주식회사 접속창 채움방법
GB2233494A (en) * 1989-06-26 1991-01-09 Philips Nv Providing an electrode on a semiconductor device
EP0430040A3 (en) * 1989-11-27 1992-05-20 Micron Technology, Inc. Method of forming a conductive via plug or an interconnect line of ductile metal within an integrated circuit using mechanical smearing
US5244534A (en) 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
KR950010854B1 (ko) * 1992-10-30 1995-09-25 현대전자산업주식회사 텅스텐 플러그 형성방법
EP0971403A1 (de) 1998-07-07 2000-01-12 Interuniversitair Microelektronica Centrum Vzw Herstellungsverfahren von Kupfer enthaltenden Metallstützen
EP0971409A1 (de) * 1998-07-07 2000-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Herstellungsverfahren von Kupfer enthaltenden Metallstützen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1286737A (en) * 1969-10-15 1972-08-23 Itt Multilevel conductive systems
JPS61112353A (ja) * 1984-11-07 1986-05-30 Nec Corp 多層配線の形成方法
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
GB2186424A (en) * 1986-01-30 1987-08-12 Plessey Co Plc Method for producing integrated circuit interconnects
EP0234407A1 (de) * 1986-02-28 1987-09-02 General Electric Company Verfahren zum Auffüllen von Verbindungs- oder Kontaktlöchern in einer mehrlagigen VLSI-Metallisierungsstruktur

Also Published As

Publication number Publication date
DE3788485D1 (de) 1994-01-27
KR880004609A (ko) 1988-06-07
KR960009091B1 (ko) 1996-07-10
JPS6390838A (ja) 1988-04-21
EP0262719A2 (de) 1988-04-06
EP0262719B1 (de) 1993-12-15
DE3788485T2 (de) 1994-06-09
CA1294716C (en) 1992-01-21
JP2573621B2 (ja) 1997-01-22
EP0262719A3 (en) 1988-12-14

Similar Documents

Publication Publication Date Title
DE68924468T2 (de) Verfahren und Struktur zur Herstellung einer Isolierung aus VLSI- und ULSI-Schaltungen.
DE1514818C3 (de)
KR890015376A (ko) 전자소자에 대한 전기적 접속방법
KR960019591A (ko) 반도체 소자 및 이의 형성 방법
DE3888883D1 (de) Verfahren zur Herstellung einer vergrabenen isolierenden Schicht in einem Halbleitersubstrat durch Ionenimplantation und Halbleiterstruktur mit einer solchen Schicht.
DE69011203D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung durch Abdecken einer leitenden Schicht mit einer Nitridschicht.
ATE98814T1 (de) Verfahren zur herstellung einer planarleiterbahn durch isotropes abscheiden von leitendem werkstoff.
ATE229231T1 (de) Verfahren zur herstellung einer halbleiteranordnung mit einer leitfähigen schicht
EP0323856A3 (de) Substratsstruktur für zusammengesetztes Halbleiterbauelement
EP0177105A3 (de) Verfahren zum Versehen einer Halbleiteranordnung mit Planarkontakten
US3586922A (en) Multiple-layer metal structure and processing
EP0572214A3 (de) Herstellungsverfahren einer Verbindungsstruktur in einer integrierten Schaltung
EP0358350A3 (de) Ausbilden eines vorgeschriebenen Musters auf einer Schicht eines Halbleiterelements
DE2902665C2 (de)
ATE86797T1 (de) Verfahren zur selbstjustierten herstellung von kontakten zwischen in uebereinander angeordneten verdrahtungsebenen einer integrierten schaltung enthaltenen leiterbahnen.
DE3578618D1 (de) Verfahren zur herstellung von halbleiteranordnungen mit einer ueberlagerten schicht aus polykristallinem silizium.
KR900015342A (ko) 반도체집적회로 및 그 제조방법
EP0810651A3 (de) Herstellungsverfahren für eine Verbindung zwischen den Schichten einer mehrlagigen Verdrahtung in einer Halbleitervorrichtung
DE3881032D1 (de) Verbindungssystem von hoher leistungsfaehigkeit fuer eine integrierte schaltung.
KR890011035A (ko) 집적회로 제조방법 및 전기접속 형성방법
EP1868240A3 (de) Verfahren zur Herstellung mehrstufiger Verbindungen bei einem Halbleiterbauelement
WO1995028000A3 (en) Method of manufacturing a semiconductor device with a multilayer wiring structure containing narrow vias
EP0346625A3 (de) Verfahren zur Herstellung eines integrierten Halbleiterschaltkreises mit Isolationsgräben
EP0206481A3 (de) Halbleiteranordnung mit Mehrschichtbedrahtung
JPS6484735A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties