GB1286737A - Multilevel conductive systems - Google Patents

Multilevel conductive systems

Info

Publication number
GB1286737A
GB1286737A GB4746270A GB4746270A GB1286737A GB 1286737 A GB1286737 A GB 1286737A GB 4746270 A GB4746270 A GB 4746270A GB 4746270 A GB4746270 A GB 4746270A GB 1286737 A GB1286737 A GB 1286737A
Authority
GB
United Kingdom
Prior art keywords
conductors
channels
silicon
oct
insulating layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4746270A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1286737A publication Critical patent/GB1286737A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1286737 Integrated circuits ITT INDUSSTRIES Inc 6 Oct 1970 [15 Oct 1969] 47462/70 Heading HlK In the manufacture of a multilayer connection system disposed on an integrated circuit semiconductor wafer the conductors are formed in channels so that their upper surfaces lie flush with the tops of respective insulating layers to avoid the strains which normally arise in such systems due to depositing material on uneven surfaces. In the described arrangements the wafer is of silicon, the insulating layers are alternately of silicon dioxide and nitride with either material next to the silicon, and the conductors are of gold. Each insulating layer is etched to form channels for the conductors, which are formed by depositing gold overall and then etching to confine it to the channels.
GB4746270A 1969-10-15 1970-10-06 Multilevel conductive systems Expired GB1286737A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86655569A 1969-10-15 1969-10-15

Publications (1)

Publication Number Publication Date
GB1286737A true GB1286737A (en) 1972-08-23

Family

ID=25347860

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4746270A Expired GB1286737A (en) 1969-10-15 1970-10-06 Multilevel conductive systems

Country Status (3)

Country Link
DE (1) DE2049908B2 (en)
FR (1) FR2066013A5 (en)
GB (1) GB1286737A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0101960A1 (en) * 1982-07-30 1984-03-07 Hitachi, Ltd. Method of manufacturing a semiconductor device having a self-aligned gate electrode
EP0262719A2 (en) * 1986-09-30 1988-04-06 Koninklijke Philips Electronics N.V. Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material
US5063175A (en) * 1986-09-30 1991-11-05 North American Philips Corp., Signetics Division Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960870A (en) * 1972-10-16 1974-06-13
US3844831A (en) * 1972-10-27 1974-10-29 Ibm Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
DE3228399A1 (en) * 1982-07-29 1984-02-02 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A MONOLITHICALLY INTEGRATED CIRCUIT
JPS5982746A (en) * 1982-11-04 1984-05-12 Toshiba Corp Electrode wiring method of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0101960A1 (en) * 1982-07-30 1984-03-07 Hitachi, Ltd. Method of manufacturing a semiconductor device having a self-aligned gate electrode
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
EP0262719A2 (en) * 1986-09-30 1988-04-06 Koninklijke Philips Electronics N.V. Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material
US5063175A (en) * 1986-09-30 1991-11-05 North American Philips Corp., Signetics Division Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material
EP0262719B1 (en) * 1986-09-30 1993-12-15 Koninklijke Philips Electronics N.V. Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material

Also Published As

Publication number Publication date
FR2066013A5 (en) 1971-08-06
DE2049908B2 (en) 1976-03-25
DE2049908A1 (en) 1971-04-22

Similar Documents

Publication Publication Date Title
US3462650A (en) Electrical circuit manufacture
US3158788A (en) Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3581165A (en) Voltage distribution system for integrated circuits utilizing low resistivity semiconductive paths for the transmission of voltages
GB1076440A (en) Isolation of semiconductor devices
US3564358A (en) Integrated circuit structure containing multiple sandwich layers of monocrystalline semiconductor and insulator material
GB1143148A (en) Air gap isolated semiconductor device
US3354360A (en) Integrated circuits with active elements isolated by insulating material
GB1286737A (en) Multilevel conductive systems
US3489961A (en) Mesa etching for isolation of functional elements in integrated circuits
US3616348A (en) Process for isolating semiconductor elements
GB1418969A (en) Method of making integrated circuits
JPS5334484A (en) Forming method for multi layer wiring
GB1154607A (en) Multiple Semiconductor Device.
GB1206502A (en) Integrated graetz rectifier arrangement
US3631311A (en) Semiconductor circuit arrangement with integrated base leakage resistance
GB1147469A (en) Semiconductor devices, integrated circuits and methods for making same
GB1483099A (en) Production of semiconductor devices with an integral heatsink
US3341743A (en) Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material
US3370204A (en) Composite insulator-semiconductor wafer
GB1129891A (en) Improvements in or relating to methods of manufacturing solid state circuits
GB1221914A (en) Manufacture of integrated circuits
US3706130A (en) Voltage distribution for integrated circuits
US3533160A (en) Air-isolated integrated circuits
ES383504A1 (en) A high frequency integrated circuit having circuit elements in separate and mutually spaced isolation regions
GB1363815A (en) Semiconductor device and method of producing same

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees