ATE95252T1 - Verfahren zur zuechtung von diamant. - Google Patents

Verfahren zur zuechtung von diamant.

Info

Publication number
ATE95252T1
ATE95252T1 AT88119329T AT88119329T ATE95252T1 AT E95252 T1 ATE95252 T1 AT E95252T1 AT 88119329 T AT88119329 T AT 88119329T AT 88119329 T AT88119329 T AT 88119329T AT E95252 T1 ATE95252 T1 AT E95252T1
Authority
AT
Austria
Prior art keywords
growing diamond
substrate
diamond
growing
nucleating
Prior art date
Application number
AT88119329T
Other languages
English (en)
Inventor
Thomas Richard Anthony
James Fulton Fleischer
Robert Charles Devries
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE95252T1 publication Critical patent/ATE95252T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00—Gems or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Farming Of Fish And Shellfish (AREA)
AT88119329T 1987-12-17 1988-11-21 Verfahren zur zuechtung von diamant. ATE95252T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13443687A 1987-12-17 1987-12-17
EP88119329A EP0320657B1 (de) 1987-12-17 1988-11-21 Verfahren zur Züchtung von Diamant

Publications (1)

Publication Number Publication Date
ATE95252T1 true ATE95252T1 (de) 1993-10-15

Family

ID=22463387

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88119329T ATE95252T1 (de) 1987-12-17 1988-11-21 Verfahren zur zuechtung von diamant.

Country Status (10)

Country Link
EP (1) EP0320657B1 (de)
JP (1) JPH0651600B2 (de)
KR (1) KR960009005B1 (de)
AT (1) ATE95252T1 (de)
AU (1) AU617142B2 (de)
BR (1) BR8806671A (de)
DE (1) DE3884580T2 (de)
IL (1) IL88195A (de)
IN (1) IN170791B (de)
ZA (1) ZA888034B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
US5206083A (en) * 1989-09-18 1993-04-27 Cornell Research Foundation, Inc. Diamond and diamond-like films and coatings prepared by deposition on substrate that contain a dispersion of diamond particles
EP0459425A1 (de) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Verfahren zur Herstellung von Diamanten
US5264071A (en) * 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
CA2049673A1 (en) * 1990-11-26 1992-05-27 James F. Fleischer Cvd diamond by alternating chemical reactions
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
CA2082711A1 (en) * 1991-12-13 1993-06-14 Philip G. Kosky Cvd diamond growth on hydride-forming metal substrates
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
DE19643550A1 (de) * 1996-10-24 1998-05-14 Leybold Systems Gmbh Lichttransparentes, Wärmestrahlung reflektierendes Schichtensystem
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
EP1340837A1 (de) * 2002-03-01 2003-09-03 Stichting Voor De Technische Wetenschappen Verfahren zur Diamant-Beschichtung von einem eisen-haltigen Substrat
WO2003074758A1 (en) 2002-03-01 2003-09-12 Stichting Voor De Technische Wetenschappen Method of forming a diamond coating on an iron-based substrate and use of such an iron-based substrate for hosting a cvd diamond coating
AT525593A1 (de) * 2021-10-22 2023-05-15 Carboncompetence Gmbh Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661526A (en) * 1969-06-24 1972-05-09 Univ Case Western Reserve Process for the catalytic growth of metastable crystals from the vapor phase
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS59182300A (ja) * 1983-03-30 1984-10-17 Mitsubishi Metal Corp ダイヤモンドの気相合成法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPH0717479B2 (ja) * 1985-12-09 1995-03-01 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0725635B2 (ja) * 1986-02-28 1995-03-22 京セラ株式会社 ダイヤモンド膜の製造方法
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
JPH0776147B2 (ja) * 1986-12-27 1995-08-16 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法

Also Published As

Publication number Publication date
JPH0651600B2 (ja) 1994-07-06
IL88195A0 (en) 1989-06-30
EP0320657B1 (de) 1993-09-29
IN170791B (de) 1992-05-23
EP0320657A1 (de) 1989-06-21
ZA888034B (en) 1989-06-28
KR960009005B1 (en) 1996-07-10
AU617142B2 (en) 1991-11-21
DE3884580D1 (de) 1993-11-04
DE3884580T2 (de) 1994-02-24
AU2701488A (en) 1989-06-22
KR890009334A (ko) 1989-08-01
IL88195A (en) 1992-12-01
BR8806671A (pt) 1989-08-29
JPH01239092A (ja) 1989-09-25

Similar Documents

Publication Publication Date Title
ATE95252T1 (de) Verfahren zur zuechtung von diamant.
DE3888797D1 (de) Verfahren zur Herstellung eines Quarzglasgefässes für Halbleiter-Einkristallzüchtung.
ATE143652T1 (de) Verfahren zur züchtung von kristallinen, mikroporösen feststoffen in einem fluordaufweisenden, wesentlich nichtwässrigen wachstumsmedium
DE69833610D1 (de) Verfahren und Vorrichtung zur Herstellung von Silicium Einkristallen mit verringerten Kristalldefekten und danach hergestellte Silicium Einkristall und Siliciumwafer
EP0389533A4 (en) Sublimation growth of silicon carbide single crystals
DE69508801D1 (de) Verfahren zur Kristallzüchtung von III-V Halbleiterverbindungen
ATA689979A (de) Verfahren zur herstellung eines polykristallinen koerpers von vorbestimmter gestalt und groesse aus einer masse von kristallen aus diamant und/oder kubischem bornitrid
ATE18261T1 (de) Verfahren zur hydrothermal-kristallzuechtung und vorrichtung.
DE69940385D1 (de) Verfahren zur Züchtung eines Einkristalls von Siliziumcarbid
ES8403980A1 (es) "metodo para obtener material de cristal simple de orientacion cristalografica controlada"
DE3888789T2 (de) Mikroorganismus mit geringer Fähigkeit zur Acetat-Bildung und Verfahren zur Herstellung nützlicher Substrate unter Verwendung dieses Mikroorganismus.
ATE76098T1 (de) Stabiles glukose-isomerase-konzentrat und verfahren zu dessen herstellung.
DE69025949D1 (de) Verfahren zum wachstum von enzymkristallen
GB1368315A (en) Method for producing semiconductor on-insulator electronic devices
ATE27312T1 (de) Verfahren zur hydrothermalen kristallzuechtung.
DE3675016D1 (de) Verfahren zur fluoreszenzverbesserung von ti:al2o3 laserkristallen durch kontrolle von kristallzuechtung-atmosphaeren.
DE69116817D1 (de) CVD Diamant mittels abwechselnden chemischen Reaktionen
DE69009831D1 (de) Verfahren zur Züchtung eines Einkristalls.
DE68913790T2 (de) Verfahren und Tiegel für das Erstarren von Materialien und Verwendung zur Halbleiter-Kristallzüchtung.
DE3889626T2 (de) Vorrichtung und Methode zur Erzeugung von Grautönen in einer Flüssigkristall-Flachanzeige.
ATE60783T1 (de) Verfahren zur herstellung von 14-hydroxy- 6-0methyl-erythromycin a.
JPS5365300A (en) Method of growing single crystal epitaxial layer on substrate and basic holder used in this method
AU2093588A (en) Purification process for dendritic web silicon crystal growth system and dendritic web silicon crystals made thereby
EP0281145A3 (en) Fermentation of microorganisms having ice nucleation activity using a temperature change
JPS6442396A (en) Meodymium-gallium-garnet single crystal and its production

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee