BR8806671A - Processo para a producao de diamante - Google Patents

Processo para a producao de diamante

Info

Publication number
BR8806671A
BR8806671A BR888806671A BR8806671A BR8806671A BR 8806671 A BR8806671 A BR 8806671A BR 888806671 A BR888806671 A BR 888806671A BR 8806671 A BR8806671 A BR 8806671A BR 8806671 A BR8806671 A BR 8806671A
Authority
BR
Brazil
Prior art keywords
production process
diamond production
diamond
substrate
nucleating
Prior art date
Application number
BR888806671A
Other languages
English (en)
Inventor
Thomas Richard Anthony
Robert Charles Devries
James Fulton Fleischer
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BR8806671A publication Critical patent/BR8806671A/pt

Links

Classifications

    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00Gems or the like
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0272Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Farming Of Fish And Shellfish (AREA)
BR888806671A 1987-12-17 1988-12-16 Processo para a producao de diamante BR8806671A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13443687A 1987-12-17 1987-12-17

Publications (1)

Publication Number Publication Date
BR8806671A true BR8806671A (pt) 1989-08-29

Family

ID=22463387

Family Applications (1)

Application Number Title Priority Date Filing Date
BR888806671A BR8806671A (pt) 1987-12-17 1988-12-16 Processo para a producao de diamante

Country Status (10)

Country Link
EP (1) EP0320657B1 (pt)
JP (1) JPH0651600B2 (pt)
KR (1) KR960009005B1 (pt)
AT (1) ATE95252T1 (pt)
AU (1) AU617142B2 (pt)
BR (1) BR8806671A (pt)
DE (1) DE3884580T2 (pt)
IL (1) IL88195A (pt)
IN (1) IN170791B (pt)
ZA (1) ZA888034B (pt)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
US5206083A (en) * 1989-09-18 1993-04-27 Cornell Research Foundation, Inc. Diamond and diamond-like films and coatings prepared by deposition on substrate that contain a dispersion of diamond particles
EP0459425A1 (en) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Process for the preparation of diamond
US5264071A (en) * 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
CA2049673A1 (en) * 1990-11-26 1992-05-27 James F. Fleischer Cvd diamond by alternating chemical reactions
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
CA2082711A1 (en) * 1991-12-13 1993-06-14 Philip G. Kosky Cvd diamond growth on hydride-forming metal substrates
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
DE19643550A1 (de) * 1996-10-24 1998-05-14 Leybold Systems Gmbh Lichttransparentes, Wärmestrahlung reflektierendes Schichtensystem
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
EP1340837A1 (en) * 2002-03-01 2003-09-03 Stichting Voor De Technische Wetenschappen Process for diamond coating of an iron-based substrate
AU2003218830A1 (en) 2002-03-01 2003-09-16 Stichting Voor De Technische Wetenschappen Method of forming a diamond coating on an iron-based substrate and use of such an iron-based substrate for hosting a cvd diamond coating
AT525593B1 (de) * 2021-10-22 2024-07-15 Carboncompetence Gmbh Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661526A (en) * 1969-06-24 1972-05-09 Univ Case Western Reserve Process for the catalytic growth of metastable crystals from the vapor phase
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS59182300A (ja) * 1983-03-30 1984-10-17 Mitsubishi Metal Corp ダイヤモンドの気相合成法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPH0717479B2 (ja) * 1985-12-09 1995-03-01 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0725635B2 (ja) * 1986-02-28 1995-03-22 京セラ株式会社 ダイヤモンド膜の製造方法
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
JPH0776147B2 (ja) * 1986-12-27 1995-08-16 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法

Also Published As

Publication number Publication date
JPH01239092A (ja) 1989-09-25
EP0320657A1 (en) 1989-06-21
ATE95252T1 (de) 1993-10-15
KR960009005B1 (en) 1996-07-10
JPH0651600B2 (ja) 1994-07-06
DE3884580D1 (de) 1993-11-04
AU2701488A (en) 1989-06-22
AU617142B2 (en) 1991-11-21
IN170791B (pt) 1992-05-23
IL88195A0 (en) 1989-06-30
IL88195A (en) 1992-12-01
ZA888034B (en) 1989-06-28
DE3884580T2 (de) 1994-02-24
EP0320657B1 (en) 1993-09-29
KR890009334A (ko) 1989-08-01

Similar Documents

Publication Publication Date Title
BR8806671A (pt) Processo para a producao de diamante
KR910006143A (ko) 투명한 다이아몬드 필름 및 이를 제조하는 방법
ES8403980A1 (es) "metodo para obtener material de cristal simple de orientacion cristalografica controlada"
EP0259777A3 (en) Method for growing single crystal thin films of element semiconductor
AU2247297A (en) Growth of colorless silicon carbide crystals
GB1213867A (en) Method of manufacturing silicon carbide single crystal filaments
EP0389533A4 (en) Sublimation growth of silicon carbide single crystals
DE3888797D1 (de) Verfahren zur Herstellung eines Quarzglasgefässes für Halbleiter-Einkristallzüchtung.
DE69214294D1 (de) Verfahren zur Züchtung von Kristallinen, mikroporösen Feststoffen in einem fluordaufweisenden, wesentlich nichtwässrigen Wachstumsmedium
DK0853690T3 (da) Siliciumcarbidsmykkesten
DE69802517D1 (de) Diamant-züchtung
FI842549A0 (fi) Stabilt glukosisomeraskoncentrat och foerfarande foer dess framstaellning.
BR8903612A (pt) Processo para producao de aco com teor extra baixo de carbono e dotado de elevado grau de pureza
BR9007737A (pt) Processo para o crescimento de cristais de enzima
ES8606196A1 (es) Un procedimiento mejorado para preparar zeolita l
BR8602054A (pt) Processo para preparacao de cristais ultrafinos de hemi-hidrato de acido fosforico
ATE27312T1 (de) Verfahren zur hydrothermalen kristallzuechtung.
GB1134964A (en) Improvements in or relating to the production of layers of a silicon or germanium nitrogen compound on semiconductor crystals
EP0630994A4 (en) METHOD FOR STEAM PHASE DIAMOND SYNTHESIS.
EP0284441A3 (en) Ii-vi group compound crystal article and process for producing the same
EP0284437A3 (en) Iii - v group compound crystal article and process for producing the same
AU3435789A (en) Process for immobilizing or depositing molecules or substances on a support
AU2093588A (en) Purification process for dendritic web silicon crystal growth system and dendritic web silicon crystals made thereby
JPS5365300A (en) Method of growing single crystal epitaxial layer on substrate and basic holder used in this method
ES2017814A6 (es) Procedimiento de obtencion de monocristales de niobato de litio de composicion congruente.

Legal Events

Date Code Title Description
FD3 Appl. lapsed due to non-payment of renewal fee
B15K Others concerning applications: alteration of classification

Ipc: C23C 16/27 (2006.01), C23C 16/02 (2006.0