IL88195A - Diamond growth process - Google Patents

Diamond growth process

Info

Publication number
IL88195A
IL88195A IL88195A IL8819588A IL88195A IL 88195 A IL88195 A IL 88195A IL 88195 A IL88195 A IL 88195A IL 8819588 A IL8819588 A IL 8819588A IL 88195 A IL88195 A IL 88195A
Authority
IL
Israel
Prior art keywords
growth process
diamond growth
substrate
diamond
nucleating
Prior art date
Application number
IL88195A
Other languages
English (en)
Other versions
IL88195A0 (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IL88195A0 publication Critical patent/IL88195A0/xx
Publication of IL88195A publication Critical patent/IL88195A/xx

Links

Classifications

    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00—Gems or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Farming Of Fish And Shellfish (AREA)
IL88195A 1987-12-17 1988-10-28 Diamond growth process IL88195A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13443687A 1987-12-17 1987-12-17

Publications (2)

Publication Number Publication Date
IL88195A0 IL88195A0 (en) 1989-06-30
IL88195A true IL88195A (en) 1992-12-01

Family

ID=22463387

Family Applications (1)

Application Number Title Priority Date Filing Date
IL88195A IL88195A (en) 1987-12-17 1988-10-28 Diamond growth process

Country Status (10)

Country Link
EP (1) EP0320657B1 (de)
JP (1) JPH0651600B2 (de)
KR (1) KR960009005B1 (de)
AT (1) ATE95252T1 (de)
AU (1) AU617142B2 (de)
BR (1) BR8806671A (de)
DE (1) DE3884580T2 (de)
IL (1) IL88195A (de)
IN (1) IN170791B (de)
ZA (1) ZA888034B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
US5206083A (en) * 1989-09-18 1993-04-27 Cornell Research Foundation, Inc. Diamond and diamond-like films and coatings prepared by deposition on substrate that contain a dispersion of diamond particles
EP0459425A1 (de) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Verfahren zur Herstellung von Diamanten
US5264071A (en) * 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
CA2049673A1 (en) * 1990-11-26 1992-05-27 James F. Fleischer Cvd diamond by alternating chemical reactions
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
CA2082711A1 (en) * 1991-12-13 1993-06-14 Philip G. Kosky Cvd diamond growth on hydride-forming metal substrates
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
DE19643550A1 (de) * 1996-10-24 1998-05-14 Leybold Systems Gmbh Lichttransparentes, Wärmestrahlung reflektierendes Schichtensystem
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
EP1340837A1 (de) * 2002-03-01 2003-09-03 Stichting Voor De Technische Wetenschappen Verfahren zur Diamant-Beschichtung von einem eisen-haltigen Substrat
JP2005526905A (ja) 2002-03-01 2005-09-08 スティヒティング フォール デ テヒニーセ ウェーテンスハッペン 鉄ベース基材上にダイヤモンド被膜を形成する方法およびｃｖｄダイヤモンド被膜を施すためのかかる鉄ベース基材の使用。
AT525593A1 (de) * 2021-10-22 2023-05-15 Carboncompetence Gmbh Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661526A (en) * 1969-06-24 1972-05-09 Univ Case Western Reserve Process for the catalytic growth of metastable crystals from the vapor phase
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS59182300A (ja) * 1983-03-30 1984-10-17 Mitsubishi Metal Corp ダイヤモンドの気相合成法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPH0717479B2 (ja) * 1985-12-09 1995-03-01 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0725635B2 (ja) * 1986-02-28 1995-03-22 京セラ株式会社 ダイヤモンド膜の製造方法
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
JPH0776147B2 (ja) * 1986-12-27 1995-08-16 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法

Also Published As

Publication number Publication date
JPH0651600B2 (ja) 1994-07-06
KR890009334A (ko) 1989-08-01
ZA888034B (en) 1989-06-28
EP0320657B1 (de) 1993-09-29
AU617142B2 (en) 1991-11-21
IL88195A0 (en) 1989-06-30
IN170791B (de) 1992-05-23
KR960009005B1 (en) 1996-07-10
ATE95252T1 (de) 1993-10-15
JPH01239092A (ja) 1989-09-25
DE3884580T2 (de) 1994-02-24
EP0320657A1 (de) 1989-06-21
DE3884580D1 (de) 1993-11-04
BR8806671A (pt) 1989-08-29
AU2701488A (en) 1989-06-22

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