ATE898T1 - Bipolarer transistor und verfahren zu seiner herstellung. - Google Patents

Bipolarer transistor und verfahren zu seiner herstellung.

Info

Publication number
ATE898T1
ATE898T1 AT80103474T AT80103474T ATE898T1 AT E898 T1 ATE898 T1 AT E898T1 AT 80103474 T AT80103474 T AT 80103474T AT 80103474 T AT80103474 T AT 80103474T AT E898 T1 ATE898 T1 AT E898T1
Authority
AT
Austria
Prior art keywords
discs
plates
chips
doped
bipolar transistor
Prior art date
Application number
AT80103474T
Other languages
English (en)
Inventor
Reinhard Dr. Dahlberg
Original Assignee
Licentia Patent-Verwaltungs-Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent-Verwaltungs-Gmbh filed Critical Licentia Patent-Verwaltungs-Gmbh
Application granted granted Critical
Publication of ATE898T1 publication Critical patent/ATE898T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT80103474T 1979-07-03 1980-06-21 Bipolarer transistor und verfahren zu seiner herstellung. ATE898T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2926785A DE2926785C2 (de) 1979-07-03 1979-07-03 Bipolarer Transistor und Verfahren zu seiner Herstellung
EP80103474A EP0022204B1 (de) 1979-07-03 1980-06-21 Bipolarer Transistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
ATE898T1 true ATE898T1 (de) 1982-05-15

Family

ID=6074781

Family Applications (1)

Application Number Title Priority Date Filing Date
AT80103474T ATE898T1 (de) 1979-07-03 1980-06-21 Bipolarer transistor und verfahren zu seiner herstellung.

Country Status (5)

Country Link
US (1) US4451843A (de)
EP (1) EP0022204B1 (de)
JP (1) JPS5613764A (de)
AT (1) ATE898T1 (de)
DE (1) DE2926785C2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549196A (en) * 1982-08-04 1985-10-22 Westinghouse Electric Corp. Lateral bipolar transistor
US5273918A (en) * 1984-01-26 1993-12-28 Temic Telefunken Microelectronic Gmbh Process for the manufacture of a junction field effect transistor
DE3402517A1 (de) * 1984-01-26 1985-08-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
JPH0770474B2 (ja) * 1985-02-08 1995-07-31 株式会社東芝 化合物半導体装置の製造方法
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
AU2305399A (en) * 1997-11-10 1999-05-31 Don L. Kendall Quantum ridges and tips
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US6762094B2 (en) * 2002-09-27 2004-07-13 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making
US20070034909A1 (en) * 2003-09-22 2007-02-15 James Stasiak Nanometer-scale semiconductor devices and method of making

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
BE500302A (de) * 1949-11-30
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2641638A (en) * 1952-03-27 1953-06-09 Rca Corp Line-contact transistor
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
GB1053069A (de) * 1963-06-28
DE1514727A1 (de) * 1965-09-30 1969-06-19 Schaefer Dipl Phys Siegfried Herstellung von pn-UEbergaengen durch plastische Verformung von Halbleitern
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices
DE1916555A1 (de) * 1969-04-01 1971-03-04 Semikron Gleichrichterbau Halbleiter-Gleichrichter-Anordnung und Verfahren zu ihrer Herstellung
GB1297046A (de) * 1969-08-25 1972-11-22
DE2244062A1 (de) * 1972-09-08 1974-03-28 Licentia Gmbh Ohmscher anschlusskontakt fuer ein silizium-halbleiterbauelement
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2547262C3 (de) * 1975-10-22 1981-07-16 Reinhard Dr. 7101 Flein Dahlberg Thermoelektrische Anordnung mit großen Temperaturgradienten und Verwendung
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
DE2837394A1 (de) * 1978-08-26 1980-03-20 Semikron Gleichrichterbau Halbleiter-brueckengleichrichteranordnung und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
DE2926785A1 (de) 1981-01-15
DE2926785C2 (de) 1985-12-12
EP0022204A1 (de) 1981-01-14
EP0022204B1 (de) 1982-04-21
JPS5613764A (en) 1981-02-10
US4451843A (en) 1984-05-29

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee