ATE898T1 - BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE. - Google Patents

BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE.

Info

Publication number
ATE898T1
ATE898T1 AT80103474T AT80103474T ATE898T1 AT E898 T1 ATE898 T1 AT E898T1 AT 80103474 T AT80103474 T AT 80103474T AT 80103474 T AT80103474 T AT 80103474T AT E898 T1 ATE898 T1 AT E898T1
Authority
AT
Austria
Prior art keywords
discs
plates
chips
doped
bipolar transistor
Prior art date
Application number
AT80103474T
Other languages
German (de)
Inventor
Reinhard Dr. Dahlberg
Original Assignee
Licentia Patent-Verwaltungs-Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent-Verwaltungs-Gmbh filed Critical Licentia Patent-Verwaltungs-Gmbh
Application granted granted Critical
Publication of ATE898T1 publication Critical patent/ATE898T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A bipolar transistor comprises a pair of monocrystalline semiconductor discs, plates or chips, one n-doped and one p-doped, one of the discs, plates or chips providing the base region and having an oppositely doped emitter region and a base/emitter p-n junction, and both of the discs, plates or chips having a structure of parallel ridges which face, cross and touch when the discs plates or chips are assembled together under mechanical pressure, the surfaces of the side edges of the ridges on the other of the discs being highly doped with the conductivity type of the base region whereby the contact surfaces between the ridges form parallel connected base/collector p-n junctions as a result of plastic deformation of the semiconductor material. The invention also includes a method of making such a bipolar transistor.
AT80103474T 1979-07-03 1980-06-21 BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE. ATE898T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2926785A DE2926785C2 (en) 1979-07-03 1979-07-03 Bipolar transistor and method for its manufacture
EP80103474A EP0022204B1 (en) 1979-07-03 1980-06-21 Bipolar transistor and process for its production

Publications (1)

Publication Number Publication Date
ATE898T1 true ATE898T1 (en) 1982-05-15

Family

ID=6074781

Family Applications (1)

Application Number Title Priority Date Filing Date
AT80103474T ATE898T1 (en) 1979-07-03 1980-06-21 BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE.

Country Status (5)

Country Link
US (1) US4451843A (en)
EP (1) EP0022204B1 (en)
JP (1) JPS5613764A (en)
AT (1) ATE898T1 (en)
DE (1) DE2926785C2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549196A (en) * 1982-08-04 1985-10-22 Westinghouse Electric Corp. Lateral bipolar transistor
US5273918A (en) * 1984-01-26 1993-12-28 Temic Telefunken Microelectronic Gmbh Process for the manufacture of a junction field effect transistor
DE3402517A1 (en) * 1984-01-26 1985-08-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for fabricating a junction field effect transistor
JPH0770474B2 (en) * 1985-02-08 1995-07-31 株式会社東芝 Method for manufacturing compound semiconductor device
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
US6667492B1 (en) * 1997-11-10 2003-12-23 Don L. Kendall Quantum ridges and tips
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US6762094B2 (en) * 2002-09-27 2004-07-13 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making
US20070034909A1 (en) * 2003-09-22 2007-02-15 James Stasiak Nanometer-scale semiconductor devices and method of making

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
NL82014C (en) * 1949-11-30
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2641638A (en) * 1952-03-27 1953-06-09 Rca Corp Line-contact transistor
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
GB1053069A (en) * 1963-06-28
DE1514727A1 (en) * 1965-09-30 1969-06-19 Schaefer Dipl Phys Siegfried Production of pn junctions by plastic deformation of semiconductors
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices
DE1916555A1 (en) * 1969-04-01 1971-03-04 Semikron Gleichrichterbau Semiconductor rectifier arrangement and method for its production
GB1297046A (en) * 1969-08-25 1972-11-22
DE2244062A1 (en) * 1972-09-08 1974-03-28 Licentia Gmbh OHM SHEAR CONNECTOR FOR A SILICON SEMI-CONDUCTOR COMPONENT
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2547262C3 (en) * 1975-10-22 1981-07-16 Reinhard Dr. 7101 Flein Dahlberg Thermoelectric arrangement with large temperature gradients and use
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
DE2837394A1 (en) * 1978-08-26 1980-03-20 Semikron Gleichrichterbau Semiconductor bridge rectifier - using two substrates, each contg. three rectifier elements, where the two direct current output leads are located on different substrates

Also Published As

Publication number Publication date
JPS5613764A (en) 1981-02-10
DE2926785C2 (en) 1985-12-12
US4451843A (en) 1984-05-29
EP0022204A1 (en) 1981-01-14
EP0022204B1 (en) 1982-04-21
DE2926785A1 (en) 1981-01-15

Similar Documents

Publication Publication Date Title
KR900000817B1 (en) Semiconductor ic device manufacturing method
ATE898T1 (en) BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE.
GB905426A (en) Improvements in or relating to semi-conductor devices
SE8403852L (en) Semiconductor overvoltage attenuators with a power output voltage that can be accurately predetermined
FR2404923A1 (en) BIPOLAR TRANSISTOR
GB871307A (en) Transistor with double collector
KR910010732A (en) Semiconductor device and manufacturing method thereof
EP0349021A3 (en) Semiconductor device and method of manufacturing the same
GB782035A (en) Improvements in semiconductor devices and methods of fabricating same
SE7609057L (en) GEL OR WAX DETAILS
IE802394L (en) Bipolar type static memory cell
ES8201774A1 (en) Semiconductor laser
JPS5627965A (en) Manufacture of semiconductor device
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
KR880013256A (en) Heterojunction Bipolar Transistors and Manufacturing Method Thereof
JPS5615068A (en) Semiconductor device and manufacture thereof
JPS5310265A (en) Impurity diffusion method
SE8304013D0 (en) MULTIPLE TRANSISTOR
JPS5542348A (en) Junction destructive type programmable rom
JPS5339081A (en) Semiconductor device
JPS5345940A (en) Semiconductor memory unit
JPS5649560A (en) Semiconductor ic device
JPS53145483A (en) Semiconductor device and production of the same
JPS52103982A (en) Composite semiconductor device
JPS561567A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee