GB914021A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB914021A
GB914021A GB2532159A GB2532159A GB914021A GB 914021 A GB914021 A GB 914021A GB 2532159 A GB2532159 A GB 2532159A GB 2532159 A GB2532159 A GB 2532159A GB 914021 A GB914021 A GB 914021A
Authority
GB
United Kingdom
Prior art keywords
wafer
zones
boron
faces
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2532159A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB914021A publication Critical patent/GB914021A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Abstract

914,021. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. July 23, 1959 [July 26, 1958], No. 25321/59. Drawings to Specification. Class 37. A semi-conductor device is made by applying to both faces of a wafer of one conductivity type activators characteristic of the opposite conductivity type, removing the activator from at least part of one of the faces and then diffusing the activator into the wafer to form zones of said opposite type. In one embodiment an N-type silicon wafer is provided with an overall coating of boron by heating at 800‹ C. in boron trichloride and hydrogen. Alternatively a higher temperature is used in which case the boron partially diffuses into the surface. The boron is next etched away to expose the edges and strips on both faces of one or both ends of the wafer and the wafer heated to 1250‹ C. to produce two P-type zones therein. Subsequently ohmic contacts are made to these zones and to the exposed strip or strips to form a three or four electrode transistor. In alternative embodiments a circular wafer is used and the boron coating removed from peripheral annular zones on both faces and/or from a central zone on one face, prior to diffusion. Ohmic contacts are subsequently made to one of the annular zones, and/or to the central zone, and to the two P- type zones.
GB2532159A 1958-07-26 1959-07-23 Improvements in or relating to semi-conductor devices Expired GB914021A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE450782 1958-07-26

Publications (1)

Publication Number Publication Date
GB914021A true GB914021A (en) 1962-12-28

Family

ID=3844352

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2532159A Expired GB914021A (en) 1958-07-26 1959-07-23 Improvements in or relating to semi-conductor devices

Country Status (4)

Country Link
BE (1) BE569807A (en)
DE (1) DE1093019C2 (en)
FR (1) FR1230933A (en)
GB (1) GB914021A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041214A (en) * 1959-09-25 1962-06-26 Clevite Corp Method of forming junction semiconductive devices having thin layers
US3507714A (en) * 1967-08-16 1970-04-21 Westinghouse Electric Corp High current single diffused transistor
US3535774A (en) * 1968-07-09 1970-10-27 Rca Corp Method of fabricating semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL98697C (en) * 1952-08-20
BE530566A (en) * 1953-07-22
GB781795A (en) * 1954-03-12 1957-08-28 Gen Electric Improvements relating to the manufacture of p-n junction devices
DE1018558B (en) * 1954-07-15 1957-10-31 Siemens Ag Process for the production of directional conductors, transistors and. Like. From a semiconductor

Also Published As

Publication number Publication date
BE569807A (en)
DE1093019B (en) 1974-08-08
DE1093019C2 (en) 1974-08-08
FR1230933A (en) 1960-09-21

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