GB1240256A - Connection for an integrated circuit - Google Patents

Connection for an integrated circuit

Info

Publication number
GB1240256A
GB1240256A GB5679669A GB5679669A GB1240256A GB 1240256 A GB1240256 A GB 1240256A GB 5679669 A GB5679669 A GB 5679669A GB 5679669 A GB5679669 A GB 5679669A GB 1240256 A GB1240256 A GB 1240256A
Authority
GB
United Kingdom
Prior art keywords
zone
substrate
conductivity type
layer
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5679669A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681811019 external-priority patent/DE1811019C3/en
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1240256A publication Critical patent/GB1240256A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,240,256. Semi-conductor device. ITT INDUSTRIES Inc. 20 Nov., 1969 [26 Nov., 1968], No. 56796/69. Heading H1K. A monolithic integrated circuit comprises a substrate 1 of one conductivity type, an epitaxial layer 4 of the opposite conductivity type, and a zone 5, within the layer 4, of the same conductivity type as the substrate, and in contact with the substrate. The method of construction includes diffusing into the substrate, except at contact area 2 to the zone, a heavily doped layer 3 of the opposite conductivity type, providing the epitaxial layer 4, and heating the device until the substrate impurity penetrates the layer 4 above the region 2 to a height suitable for contacting the subsequently diffused zone 5. The zone 5 may form a resistor, or the base of a transistor by a further diffusion of an emitter zone within the zone 5. Alternatively the resistor may be formed as a ring zone surrounding a core zone of the epitaxial layer, and be connected by an electrode to the core zone. The device is stated to reduce the number of surface contacts required, and to reduce overlaying connections. Antimony and boron may be used as dopants.
GB5679669A 1968-11-26 1969-11-20 Connection for an integrated circuit Expired GB1240256A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681811019 DE1811019C3 (en) 1968-11-26 Method for contacting a semiconductor zone located on the surface of a monolithic solid-state circuit

Publications (1)

Publication Number Publication Date
GB1240256A true GB1240256A (en) 1971-07-21

Family

ID=5714381

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5679669A Expired GB1240256A (en) 1968-11-26 1969-11-20 Connection for an integrated circuit

Country Status (4)

Country Link
CH (1) CH504103A (en)
FR (1) FR2024284A1 (en)
GB (1) GB1240256A (en)
NL (1) NL6917817A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2529015A1 (en) * 1982-06-21 1983-12-23 Tokyo Shibaura Electric Co SEMICONDUCTOR TRANSISTOR DEVICE ELIMINATING PARASITE CURRENT PRODUCTION

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2529015A1 (en) * 1982-06-21 1983-12-23 Tokyo Shibaura Electric Co SEMICONDUCTOR TRANSISTOR DEVICE ELIMINATING PARASITE CURRENT PRODUCTION

Also Published As

Publication number Publication date
CH504103A (en) 1971-02-28
DE1811019A1 (en) 1970-05-21
DE1811019B2 (en) 1971-01-21
FR2024284A1 (en) 1970-08-28
NL6917817A (en) 1970-05-28

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